74 research outputs found
DC-electric-field-induced and low-frequency electromodulation second-harmonic generation spectroscopy of Si(001)-SiO interfaces
The mechanism of DC-Electric-Field-Induced Second-Harmonic (EFISH) generation
at weakly nonlinear buried Si(001)-SiO interfaces is studied experimentally
in planar Si(001)-SiO-Cr MOS structures by optical second-harmonic
generation (SHG) spectroscopy with a tunable Ti:sapphire femtosecond laser. The
spectral dependence of the EFISH contribution near the direct two-photon
transition of silicon is extracted. A systematic phenomenological model of the
EFISH phenomenon, including a detailed description of the space charge region
(SCR) at the semiconductor-dielectric interface in accumulation, depletion, and
inversion regimes, has been developed. The influence of surface quantization
effects, interface states, charge traps in the oxide layer, doping
concentration and oxide thickness on nonlocal screening of the DC-electric
field and on breaking of inversion symmetry in the SCR is considered. The model
describes EFISH generation in the SCR using a Green function formalism which
takes into account all retardation and absorption effects of the fundamental
and second harmonic (SH) waves, optical interference between field-dependent
and field-independent contributions to the SH field and multiple reflection
interference in the SiO layer. Good agreement between the phenomenological
model and our recent and new EFISH spectroscopic results is demonstrated.
Finally, low-frequency electromodulated EFISH is demonstrated as a useful
differential spectroscopic technique for studies of the Si-SiO interface in
silicon-based MOS structures.Comment: 31 pages, 14 figures, 1 table, figures are also available at
http://kali.ilc.msu.su/articles/50/efish.ht
Trapping Surface Electrons on Graphene Layers and Islands
We report the use of time- and angle-resolved two-photon photoemission to map
the bound, unoccupied electronic structure of the weakly coupled
graphene/Ir(111) system. The energy, dispersion, and lifetime of the lowest
three image-potential states are measured. In addition, the weak interaction
between Ir and graphene permits observation of resonant transitions from an
unquenched Shockley-type surface state of the Ir substrate to graphene/Ir
image-potential states. The image-potential-state lifetimes are comparable to
those of mid-gap clean metal surfaces. Evidence of localization of the excited
electrons on single-atom-layer graphene islands is provided by
coverage-dependent measurements
Mid-infrared optical parametric amplifier using silicon nanophotonic waveguides
All-optical signal processing is envisioned as an approach to dramatically
decrease power consumption and speed up performance of next-generation optical
telecommunications networks. Nonlinear optical effects, such as four-wave
mixing (FWM) and parametric gain, have long been explored to realize
all-optical functions in glass fibers. An alternative approach is to employ
nanoscale engineering of silicon waveguides to enhance the optical
nonlinearities by up to five orders of magnitude, enabling integrated
chip-scale all-optical signal processing. Previously, strong two-photon
absorption (TPA) of the telecom-band pump has been a fundamental and
unavoidable obstacle, limiting parametric gain to values on the order of a few
dB. Here we demonstrate a silicon nanophotonic optical parametric amplifier
exhibiting gain as large as 25.4 dB, by operating the pump in the mid-IR near
one-half the band-gap energy (E~0.55eV, lambda~2200nm), at which parasitic
TPA-related absorption vanishes. This gain is high enough to compensate all
insertion losses, resulting in 13 dB net off-chip amplification. Furthermore,
dispersion engineering dramatically increases the gain bandwidth to more than
220 nm, all realized using an ultra-compact 4 mm silicon chip. Beyond its
significant relevance to all-optical signal processing, the broadband
parametric gain also facilitates the simultaneous generation of multiple
on-chip mid-IR sources through cascaded FWM, covering a 500 nm spectral range.
Together, these results provide a foundation for the construction of
silicon-based room-temperature mid-IR light sources including tunable
chip-scale parametric oscillators, optical frequency combs, and supercontinuum
generators
Observation of soliton pulse compression in photonic crystal waveguides
We demonstrate soliton-effect pulse compression in mm-long photonic crystal
waveguides resulting from strong anomalous dispersion and self-phase
modulation. Compression from 3ps to 580fs, at low pulse energies(~10pJ), is
measured via autocorrelation
Focus issue introduction: Nonlinear optics 2013
Nonlinear Optics has continued to develop over the last few years at an extremely fast pace, with significant advances being reported in nonlinear optical metamaterials, optical signal processing, quantum optics, nonlinear optics at subwavelength scale, and biophotonics. These exciting new developments have generated significant potential for a broad spectrum of technological applications in which nonlinear-optical processes play a central role. (C) 2013 Optical Society of Americ
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