2,601 research outputs found
Possible evidence of a spontaneous spin-polarization in mesoscopic 2D electron systems
We have experimentally studied the non-equilibrium transport in low-density
clean 2D electron systems at mesoscopic length scales. At zero magnetic field
(B), a double-peak structure in the non-linear conductance was observed close
to the Fermi energy in the localized regime. From the behavior of these peaks
at non-zero B, we could associate them to the opposite spin states of the
system, indicating a spontaneous spin polarization at B = 0. Detailed
temperature and disorder dependence of the structure shows that such a
splitting is a ground state property of the low-density 2D systems.Comment: 7 pages, 5 figure
Activation mechanisms in sodium-doped Silicon MOSFETs
We have studied the temperature dependence of the conductivity of a silicon
MOSFET containing sodium ions in the oxide above 20 K. We find the impurity
band resulting from the presence of charges at the silicon-oxide interface is
split into a lower and an upper band. We have observed activation of electrons
from the upper band to the conduction band edge as well as from the lower to
the upper band. A possible explanation implying the presence of Hubbard bands
is given.Comment: published in J. Phys. : Condens. Matte
Quantized charge pumping through a quantum dot by surface acoustic waves
We present a realization of quantized charge pumping. A lateral quantum dot
is defined by metallic split gates in a GaAs/AlGaAs heterostructure. A surface
acoustic wave whose wavelength is twice the dot length is used to pump single
electrons through the dot at a frequency f=3GHz. The pumped current shows a
regular pattern of quantization at values I=nef over a range of gate voltage
and wave amplitude settings. The observed values of n, the number of electrons
transported per wave cycle, are determined by the number of electronic states
in the quantum dot brought into resonance with the fermi level of the electron
reservoirs during the pumping cycle.Comment: 8 page
Energy-level pinning and the 0.7 spin state in one dimension: GaAs quantum wires studied using finite-bias spectroscopy
We study the effects of electron-electron interactions on the energy levels
of GaAs quantum wires (QWs) using finite-bias spectroscopy. We probe the energy
spectrum at zero magnetic field, and at crossings of opposite-spin-levels in
high in-plane magnetic field B. Our results constitute direct evidence that
spin-up (higher energy) levels pin to the chemical potential as they populate.
We also show that spin-up and spin-down levels abruptly rearrange at the
crossing in a manner resembling the magnetic phase transitions predicted to
occur at crossings of Landau levels. This rearranging and pinning of subbands
provides a phenomenological explanation for the 0.7 structure, a
one-dimensional (1D) nanomagnetic state, and its high-B variants.Comment: 6 pages, 4 figure
Evidence for multiple impurity bands in sodium-doped silicon MOSFETs
We report measurements of the temperature-dependent conductivity in a silicon
metal-oxide-semiconductor field-effect transistor that contains sodium
impurities in the oxide layer. We explain the variation of conductivity in
terms of Coulomb interactions that are partially screened by the proximity of
the metal gate. The study of the conductivity exponential prefactor and the
localization length as a function of gate voltage have allowed us to determine
the electronic density of states and has provided arguments for the presence of
two distinct bands and a soft gap at low temperature.Comment: 4 pages; 5 figures; Published in PRB Rapid-Communication
Nuclear spin coherence in a quantum wire
We have observed millisecond-long coherent evolution of nuclear spins in a
quantum wire at 1.2 K. Local, all-electrical manipulation of nuclear spins is
achieved by dynamic nuclear polarization in the breakdown regime of the Integer
Quantum Hall Effect combined with pulsed Nuclear Magnetic Resonance. The
excitation thresholds for the breakdown are significantly smaller than what
would be expected for our sample and the direction of the nuclear polarization
can be controlled by the voltage bias. As a four-level spin system, the device
is equivalent to two qubits.Comment: 5 pages, 5 figure
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