Pulsed laser deposition of Ga-La-S chalcogenide glass thin film optical waveguides

Thin film optical waveguides of the chalcogenide glass Ga-La-S have been deposited on substrates of CaF2 and microscope glass by the technique of pulsed laser deposition. The chalcogenide properties of photobleaching, photodoping, and photoinduced refractive index changes have been observed and preliminary experiments carried out. The refractive index and thickness of the layer were verified using a waveguide "dark mode" analysis technique

The utility of the Historical Clinical Risk -20 Scale as a predictor of outcomes in decisions to transfer patients from high to lower levels of security-A UK perspective

<p>Abstract</p> <p>Background</p> <p>Structured Professional Judgment (SPJ) approaches to violence risk assessment are increasingly being adopted into clinical practice in international forensic settings. The aim of this study was to examine the predictive validity of the Historical Clinical Risk -20 (HCR-20) violence risk assessment scale for outcome following transfers from high to medium security in a United Kingdom setting.</p> <p>Methods</p> <p>The sample was predominately male and mentally ill and the majority of cases were detained under the criminal section of the Mental Health Act (1986). The HCR-20 was rated based on detailed case file information on 72 cases transferred from high to medium security. Outcomes were examined, independent of risk score, and cases were classed as "success or failure" based on established criteria.</p> <p>Results</p> <p>The mean length of follow up was 6 years. The total HCR-20 score was a robust predictor of failure at lower levels of security and return to high security. The Clinical and Risk management items contributed most to predictive accuracy.</p> <p>Conclusions</p> <p>Although the HCR-20 was designed as a violence risk prediction tool our findings suggest it has potential utility in decisions to transfer patients from high to lower levels of security.</p

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Two-Dimensional Transverse Cross-Section Nanopotentiometry of Actively-Driven Buried Heterostructure Multiple-Quantum-Well Lasers

We report results of two-dimensional local potential measurement of the transverse cross-section of operating buried-heterostructure (BH) multiple-quantum-well lasers. The measured two-dimensional image of potential distribution resolved clearly the multiquantum-well active region and the p-n-p-n current-blocking structure of the BH laser, showing close correlation to the scanning spreading resistancemicroscopy image. Nanopotentiometry measurements were also performed on the p-n-p-n current-blocking structure of a BH laser under different forward bias voltages. The nanopotentiometry results provide direct insight into the behavior of p-n-p-n current-blocking layers intended to minimize current leakage. Our results demonstrate the application of nanopotentiometry to the delineation of complex buried structures in quantum optoelectronic devices

Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy

We report results of a scanning spreading resistancemicroscopy (SSRM) and scanning capacitancemicroscopy (SCM) study of the distribution of charge carriers inside multi-quantum-well (MQW) buried heterostructure (BH) lasers. We demonstrate that individual quantum-well–barrier layers can be resolved using high-resolution SSRM. Calibrated SSRM and SCM measurements were performed on the MQW BH laser structure, by utilizing known InP dopant staircase samples to calibrate the instrumentation. Doping concentrations derived from SSRM and SCM measurements were compared with the nominal values of both p- and n-doped regions in the MQW BH lasers. For n-type materials, the accuracy was bias dependent with SSRM, while for SCM, excellent quantitative agreement between measured and nominal dopant values was obtained. The SSRM was able to measure the dopant concentration in the p-type materials with ∼30% accuracy, but quantitative measurements could not be obtained with the SCM. Our results demonstrate the utility of combining calibrated SSRM and SCM to delineate quantitatively the transverse cross-sectional structure of complex two-dimensional devices such as MQW BH lasers, in which traditional one-dimensional probing using secondary ion mass spectroscopy provides only a partial picture of internal device structure

POWER, INFLUENCE, AND HIERARCHY: DEFENSE INDUSTRIES IN A UNIPOLAR WORLD

The global defense-industrial sector reflects the hierarchy of power in the post-Cold War world. As in the larger international system, the United States plays the dominant role in the defense sector as well. It is a comparative advantage often used by US policymakers to influence the foreign policy behavior of other states. Curiously, the radical concentration of the world's defense industrial sector, as described here, has received relatively little scrutiny from either academia or the media, even though it not only reflects the international order but provides the United States with considerable leverage in it.International Relations, Defense industries, Arms industries, Power, Influence, Unipolar, Globalization, Arms transfers, Arms exports,