Thin Ferromagnetic Films Deposition by Facing Target Sputtering Method

Facing targets sputtering system, constructed specially for ferromagnetic cathode sputtering, was investigated in this study. The currentvoltage (I-V ) characteristics, deposition rate dependence on the discharge power, dependence on the distance between the center axis of targets and substrate, and on distance between the targets were investigated. Magnetic field distribution between two targets was measured. FTS system has been used successfully to prepare Fe films on glass substrate in various temperatures. The highest deposition rate for this film was 2.2 nm/s when distance between targets was 70 mm and the distance between substrate and a distance from the center axis of targets was 60 mm. X-ray diffraction (XRD) and Atomic Force Microscope (AFM) were used to analyze the surface structure of Fe thin films. It was found that films crystallite sizes depend on deposition temperature

Zr, ZrN and Zr/Al Thin Films Deposition Using Arc Evaporation and Annealing

The chemical reactions are widely used for the layers of different composition formation. However, synthesis mechanism is a complicated process in thin films/layers system, and is not completely studied. The purpose of this paper was to analyze the kinetics of chemical compounds in reaction, to produce ZrO₂ thin films using arc evaporation and annealing (post-deposition), and to analyze them. The pure zirconium (Zr) and zirconium nitride (ZrN) were deposited using arc evaporation. 10% mol of aluminum was evaporated on a few Zr films. All deposited films were annealed in the air atmosphere gradually changing the temperature from 400°C to 1100°C in order to produce ZrO₂ films. The formation processes of the new phase were studied. Activation energy of the reactions was calculated. Structural properties were measured using X-ray diffraction, optical properties - using ellipsometry. Tetragonal phase of ZrO₂ was obtained in the annealing process of ZrO₂/Al thin film in the air atmosphere of 800°C

Zr, ZrN and Zr/Al Thin Films Deposition Using Arc Evaporation and Annealing

The chemical reactions are widely used for the layers of different composition formation. However, synthesis mechanism is a complicated process in thin films/layers system, and is not completely studied. The purpose of this paper was to analyze the kinetics of chemical compounds in reaction, to produce ZrO₂ thin films using arc evaporation and annealing (post-deposition), and to analyze them. The pure zirconium (Zr) and zirconium nitride (ZrN) were deposited using arc evaporation. 10% mol of aluminum was evaporated on a few Zr films. All deposited films were annealed in the air atmosphere gradually changing the temperature from 400°C to 1100°C in order to produce ZrO₂ films. The formation processes of the new phase were studied. Activation energy of the reactions was calculated. Structural properties were measured using X-ray diffraction, optical properties - using ellipsometry. Tetragonal phase of ZrO₂ was obtained in the annealing process of ZrO₂/Al thin film in the air atmosphere of 800°C

Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering

In this work $Bi_2O_3$ thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the $Bi_2O_3$ films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates

Investigation of Structural and Optical Properties of GDC Thin Films Deposited by Reactive Magnetron Sputtering

The purpose of this paper was to analyze structural and optical properties of gadolinia-doped ceria (GDC, $Ce_{0.9}Gd_{0.1}O_{1.95}$) thin films. At first the ceria-gadolinia multilayer sandwich systems (4-12 layers) were deposited using reactive magnetron sputtering in the $O_2$/Ar gas mixtures. The films were formed with ≈ 90% ceria and ≈ 10% gadolinia. The GDC thin films deposited on Si (111) substrate were annealed at 600°C for 1 h in air. The thickness of the formed GDC multilayer systems was about 600 nm. The GDC thin film microstructure was investigated by X-ray diffraction and scanning electron microscopy. The texture coefficient $T_{c(hkl)}$ of GDC films was evaluated from the X-ray diffraction patterns. The crystallite size of GDC films was estimated from the Scherrer equation. Optical properties of the annealed GDC thin films were examined using a laser ellipsometer. The results show that the number of layers has the influence on GDC thin film formation. As follows from the analysis of structural and optical properties of GDC 12 layer system annealed at 600°C for one hour in air has the highest refractive index n = 2.17

Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering

In this work $Bi_2O_3$ thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the $Bi_2O_3$ films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates

Investigation of Structural and Optical Properties of GDC Thin Films Deposited by Reactive Magnetron Sputtering

The purpose of this paper was to analyze structural and optical properties of gadolinia-doped ceria (GDC, Ce0.9Gd0.1O1.95) thin films. At first the ceria-gadolinia multilayer sandwich systems (4-12 layers) were deposited using reactive magnetron sputtering in the O2/Ar gas mixtures. The films were formed with ≈ 90% ceria and ≈ 10% gadolinia. The GDC thin films deposited on Si (111) substrate were annealed at 600 • C for 1 h in air. The thickness of the formed GDC multilayer systems was about 600 nm. The GDC thin film microstructure was investigated by X-ray diffraction and scanning electron microscopy. The texture coefficient T c(hkl) of GDC films was evaluated from the X-ray diffraction patterns. The crystallite size of GDC films was estimated from the Scherrer equation. Optical properties of the annealed GDC thin films were examined using a laser ellipsometer. The results show that the number of layers has the influence on GDC thin film formation. As follows from the analysis of structural and optical properties of GDC 12 layer system annealed at 600 • C for one hour in air has the highest refractive index n = 2.17