Director Reputation, Ceo-Board Power, And The Dynamics Of Board Interlocks

This study advances research on CEO-board relationships, interlocking directorates, and director reputation by examining how contests for intraorganizational power can affect interorganizational ties. We propose that powerful top managers seek to maintain their control by selecting and retaining board members with experience on other, passive boards and excluding individuals with experience on more active boards. We also propose that powerful boards similarly seek to maintain their control by favoring directors with a reputation for more actively monitoring management and avoiding directors with experience on passive boards. Hypotheses are tested longitudinally using CEO-board data taken from 491 of the largest U.S. corporations over a recent seven-year period. The findings suggest that variation in CEO-board power relationships across organizations has contributed to a segmentation of the corporate director network. We discuss how our perspective can reconcile contrary views and debates on whether increased board control has diffused across large U.S. corporations.(.)Managemen

Defections From The Inner Circle: Social Exchange, Reciprocity, And The Diffusion Of Board Independence In Us Corporations

This study seeks to reconcile traditional sociological views of the corporate board as an instrument of elite cohesion with recent evidence of greater board activism and control over top management. We propose that CEO-directors may typically support fellow CEOs by impeding increased board control over management but that CEO-directors may also foster this change if they have experienced it in their own corporation. Drawing on social exchange theory, we develop and test the argument that these CEO-directors may experience a reversal in the basis for generalized social exchange with other top managers from one of deference and support to one of independence and control. Using data from a large sample of major U.S. corporations over a recent ten-year period, we show (1) how CEO-directors ''defect'' from the network of mutually supportive corporate leaders, (2) how defections have diffused across organizations and over time, and (3) how this has contributed to increased board control, as measured by changes in board structure, diversification strategy, and contingent compensation. We also provide evidence that a social exchange perspective can explain the diffusion of these changes better than more conventional perspectives on network diffusion that emphasize imitation or learning.Business Administratio

A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.Comment: Related papers at http://pettagroup.princeton.ed

Scalable gate architecture for densely packed semiconductor spin qubits

We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array and 3 single quantum dot charge sensors. We show reproducible single quantum dot charging and orbital energies, with standard deviations less than 20% relative to the mean across the 9 dot array. The single quantum dot charge sensors have a charge sensitivity of 8.2 x 10^{-4} e/root(Hz) and allow the investigation of real-time charge dynamics. As a demonstration of the versatility of this device, we use single-shot readout to measure a spin relaxation time T1 = 170 ms at a magnetic field B = 1 T. By reconfiguring the device, we form two capacitively coupled double quantum dots and extract a mutual charging energy of 200 microeV, which indicates that 50 GHz two-qubit gate operation speeds are feasible

A Coherent Spin-Photon Interface in Silicon

Electron spins in silicon quantum dots are attractive systems for quantum computing due to their long coherence times and the promise of rapid scaling using semiconductor fabrication techniques. While nearest neighbor exchange coupling of two spins has been demonstrated, the interaction of spins via microwave frequency photons could enable long distance spin-spin coupling and "all-to-all" qubit connectivity. Here we demonstrate strong-coupling between a single spin in silicon and a microwave frequency photon with spin-photon coupling rates g_s/(2\pi) > 10 MHz. The mechanism enabling coherent spin-photon interactions is based on spin-charge hybridization in the presence of a magnetic field gradient. In addition to spin-photon coupling, we demonstrate coherent control of a single spin in the device and quantum non-demolition spin state readout using cavity photons. These results open a direct path toward entangling single spins using microwave frequency photons

Investigation of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures

We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms in this increasingly important materials system. By analyzing data from 26 wafers with different heterostructure growth profiles we observe a strong correlation between the background oxygen concentration in the Si quantum well and the maximum mobility. The highest quality wafer supports a 2DEG with a mobility of 160,000 cm^2/Vs at a density 2.17 x 10^11/cm^2 and exhibits a metal-to-insulator transition at a critical density 0.46 x 10^11/cm^2. We extract a valley splitting of approximately 150 microeV at a magnetic field of 1.8 T. These results provide evidence that undoped Si/SiGe heterostructures are suitable for the fabrication of few-electron quantum dots.Comment: Related papers at http://pettagroup.princeton.ed