Gate-tunable bandgap in bilayer graphene

The tight-binding model of bilayer graphene is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the equation for the gap is obtained. This equation for the ratio of the gap to the chemical potential is determined only by the screening constant. Thus the gap is strictly proportional to the gate voltage or the carrier concentration in the absence of donors or acceptors. In the opposite case, where the donors or acceptors are present, the gap demonstrates the asymmetrical behavior on the electron and hole sides of the gate bias. A comparison with experimental data obtained by Kuzmenko et al demonstrates the good agreement.Comment: 6 pages, 5 figure

Quantum magneto-optics of graphite family

The optical conductivity of graphene, bilayer graphene, and graphite in quantizing magnetic fields is studied. Both dynamical conductivities, longitudinal and Hall's, are analytically evaluated. The conductivity peaks are explained in terms of electron transitions. We have shown that trigonal warping can be considered within the perturbation theory for strong magnetic fields larger than 1 T and in the semiclassical approach for weak fields when the Fermi energy is much larger than the cyclotron frequency. The main optical transitions obey the selection rule with \Deltan = 1 for the Landau number n, however the \Deltan = 2 transitions due to the trigonal warping are also possible. The Faraday/Kerr rotation and light transmission/reflection in the quantizing magnetic fields are calculated. Parameters of the Slonczewski-Weiss-McClure model are used in the fit taking into account the previous dHvA measurements and correcting some of them for the case of strong magnetic fields.Comment: 28 pages, 12 figures. arXiv admin note: text overlap with arXiv:1106.340