Simulation and analysis of solenoidal ion sources

We present a detailed analysis and simulation of solenoidal, magnetically confined electron bombardment ion sources, aimed at molecular beam detection. The aim is to achieve high efficiency for singly ionized species while minimizing multiple ionization. Electron space charge plays a major role and we apply combined ray tracing and finite element simulations to determine the properties of a realistic geometry. The factors controlling electron injection and ion extraction are discussed. The results from simulations are benchmarked against experimental measurements on a prototype source

HREM studies of intergrowths in Sr2[Srn-1TinO3n+1] Ruddlesden-Popper phases synthesized by mechanochemical activation

A mechanochemical activation route has been applied in order to obtain the <i>n</i>=1–4 and ∞ members of the Sr<sub>2</sub>[Sr<sub>n</sub><sub>−1</sub>Ti<sub>n</sub>O<sub>3n+1</sub>] Ruddlesden– Popper series from different (<i>n</i>+1)SrO:nTiO<sub>2</sub> mixtures. The mechanosynthesis of SrTiO<sub>3</sub> and Sr<sub>2</sub>TiO<sub>4</sub> was observed during the milling process from the initial stoichiometric mixture, but in the cases of the <i>n</i>=2–4 members, a subsequent thermal treatment was needed. The synthesis protocol of Sr<sub>3</sub>Ti<sub>2</sub>O<sub>7</sub> has been greatly improved and this compound can be isolated as a single, crystalline phase after annealing at 800°C. In the case of Sr<sub>4</sub>Ti<sub>3</sub>O<sub>10</sub> and Sr<sub>5</sub>Ti<sub>4</sub>O<sub>13</sub>, the formation temperature was also decreased, but members with <i>n</i>=3 and 4 could not be isolated. Detailed investigations using electron microscopy methods (TEM, HREM and SAED) were carried out in the samples corresponding to <i>n</i>=2–4. Although a single ordered Sr<sub>3</sub>Ti<sub>2</sub>O<sub>7</sub> structure is dominant in the sample corresponding to <i>n</i>=2, a few intergrowths of other Ruddlesden–Popper phases were observed. In the cases of <i>n</i>=3 and 4, the intergrowths of Ruddlesden–Popper phases are more frequent than in the <i>n</i>=2 composition and are randomly distributed in the sample. The more frequent occurrence of such stacking faults, with increasing <i>n</i> value, leads to a somewhat disordered layer stacking sequence

Investigating the effect of a stress-based uniaxial anisotropy on the magnetic behaviour of La_0.7Sr_0.3MnO₃ elements

We investigate the interplay between shape anisotropy and a stress-based uniaxial anisotropy on the magnetic domain structure of La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> nanoelements as a function of aspect ratio, using micromagnetic simulations. We show that a direct competition between the anisotropies gives rise to high energy multi-domain flux closure configurations, whilst an alignment of the anisotropies can modify the effective element dimensions and act to stabilise a single domain configuration. Our results demonstrate the ability to control the spin state of La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> elements in addition to tailoring the domain wall width by controlling the anisotropy of the material, which is key for spintronic applications that require a high spin-polarization and stable magnetic configurations

Nanocharacterisation of precipitates in austenite high manganese steels with advanced techniques: HRSTEM and DualEELS mapping

To achieve optimal mechanical properties in high manganese steels, the precipitation of nanoprecipitates of vanadium and niobium carbides is under investigation. It is shown that under controlled heat treatments between 850°C and 950°C following hot deformation, few-nanometre precipitates of either carbide can be produced in test steels with suitable contents of vanadium or niobium. The structure and chemistry of these precipitates are examined in detail with a spatial resolution down to better than 1 nm using a newly commissioned scanning transmission electron microscope. In particular, it is shown that the nucleation of vanadium carbide precipitates often occurs at pre-existing titanium carbide precipitates which formed from titanium impurities in the bulk steel. This work will also highlight the links between the nanocharacterisation and changes in the bulk properties on annealing

High resolution structural characterisation of laser-induced defect clusters inside diamond

Laser writing with ultrashort pulses provides a potential route for the manufacture of three-dimensional wires, waveguides and defects within diamond. We present a transmission electron microscopy (TEM) study of the intrinsic structure of the laser modifications and reveal a complex distribution of defects. Electron energy loss spectroscopy (EELS) indicates that the majority of the irradiated region remains as $sp^3$ bonded diamond. Electrically-conductive paths are attributed to the formation of multiple nano-scale, $sp^2$-bonded graphitic wires and a network of strain-relieving micro-cracks

Linear chemically sensitive electron tomography using DualEELS and compressed sensing

No abstract available

Engineering magnetic domain-wall structure in permalloy nanowires

Using Lorentz transmission electron microscopy we investigate the behavior of domain walls pinned at non-topographic defects in Cr(3 nm)/Permalloy(10 nm)/Cr(5 nm) nanowires of width 500 nm. The pinning sites consist of linear defects where magnetic properties are modified by a Ga ion probe with diameter ~ 10 nm using a focused ion beam microscope. We study the detailed change of the modified region (which is on the scale of the focused ion spot) using electron energy loss spectroscopy and differential phase contrast imaging on an aberration (Cs) corrected scanning transmission electron microscope. The signal variation observed indicates that the region modified by the irradiation corresponds to ~ 40-50 nm despite the ion probe size of only 10 nm. Employing the Fresnel mode of Lorentz transmission electron microscopy, we show that it is possible to control the domain wall structure and its depinning strength not only via the irradiation dose but also the line orientation.Comment: Accepted for publication in Physical Review Applie

Texture, twinning and metastable "tetragonal" phase in ultrathin films of HfO₂ on a Si substrate

Thin HfO<sub>2</sub> films grown on the lightly oxidised surface of (100) Si wafers have been examined using dark-field transmission electron microscopy and selected area electron diffraction in plan view. The polycrystalline film has a grain size of the order of 100 nm and many of the grains show evidence of twinning on (110) and (001) planes. Diffraction studies showed that the film had a strong [110] out-of-plane texture, and that a tiny volume fraction of a metastable (possibly tetragonal) phase was retained. The reasons for the texture, twinning and the retention of the metastable phase are discussed

Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates

Mid-infrared intersubband absorption from p-Ge quantum wells with Si0.5Ge0.5 barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red transmission and photoluminescence measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8–13 μm

Mid-Infrared Intersubband Absorption from P-Ge Quantum Wells on Si

Mid-infrared intersubband absorption from p-Ge quantum wells with Si0.5Ge0.5 barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red spectroscopy measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8–13 μm