Radiation effects in GaAs AMOS solar cells

The results of radiation damage produced in AMOS (Antireflecting-Metal-Oxide-Semiconductor) cells with Sb2O3 interfacial oxide layers by 1-MeV electrons are presented. The degradation properties of the cells as a function of irradiation fluences were correlated with the changes in their spectral response, C-V, dark forward, and light I-V characteristics. The active n-type GaAs layers were grown by the OM-CVD technique, using sulfur doping in the range between 3 x 10 to the 15th power and 7 x 10 to the 16th power/cu cm. At a fluence of 10 to the 16th power e/sq cm, the low-doped samples showed I sub sc degradation of 8% and V sub oc degradation of 8%. The high-doped samples showed I sub sc and V sub oc degradation of 32% and 1%, respectively, while the fill factor remained relatively unchanged for both. AMOS cells with water vapor-grown interfacial layers showed no significant change in V sub oc

Solutions of Conformal Turbulence on a Half Plane

Exact solutions of conformal turbulence restricted on a upper half plane are obtained. We show that the inertial range of homogeneous and isotropic turbulence with constant enstrophy flux develops in a distant region from the boundary. Thus in the presence of an anisotropic boundary, these exact solutions of turbulence generalize Kolmogorov's solution consistently and differ from the Polyakov's bulk case which requires a fine tunning of coefficients. The simplest solution in our case is given by the minimal model of $p=2, q=33$ and moreover we find a fixed point of solutions when $p,q$ become large.Comment: 10pages, KHTP-93-07, SNUCTP-93-3

Curvature-induced spin-orbit coupling and spin relaxation in a chemically clean single-layer graphene

The study of spin-related phenomena in materials requires knowledge on the precise form of effective spin-orbit coupling of conducting carriers in the solid-states systems. We demonstrate theoretically that curvature induced by corrugations or periodic ripples in single-layer graphenes generates two types of effective spin-orbit coupling. In addition to the spin-orbit coupling reported previously that couples with sublattice pseudospin and corresponds to the Rashba-type spin-orbit coupling in a corrugated single-layer graphene, there is an additional spin-orbit coupling that does not couple with the pseudospin, which can not be obtained from the extension of the curvature-induced spin-orbit coupling of carbon nanotubes. Via numerical calculation we show that both types of the curvature-induced spin-orbit coupling make the same order of contribution to spin relaxation in chemically clean single-layer graphene with nanoscale corrugation. The spin relaxation dependence on the corrugation roughness is also studied.Comment: 8 pages, 4 figure

The Two-Boson-Exchange Correction to Parity-Violating Elastic Electron-Proton Scattering

We calculate the two-boson-exchange (TBE) corrections to the parity-violating asymmetry of the elastic electron-proton scattering in a simple hadronic model including the nucleon and the $\Delta(1232)$ intermediate states. We find that $\Delta$ contribution $\delta_\Delta$ is, in general, comparable with the nucleon contribution $\delta_N$ and the current experimental measurements of strange-quark effects in the proton neutral weak current. The total TBE corrections to the current extracted values of $G^{s}_{E}+\beta G^{s}_{M}$ in recent experiments are found to lie in the range of $-7\sim +7$.Comment: 3 pages, 2 figs, 1 table, talk given at International Conference of Particle and Nuclei (PANIC08) Eilat, Israel, 9-14 Nov,200

Collective patterns arising out of spatio-temporal chaos

We present a simple mathematical model in which a time averaged pattern emerges out of spatio-temporal chaos as a result of the collective action of chaotic fluctuations. Our evolution equation possesses spatial translational symmetry under a periodic boundary condition. Thus the spatial inhomogeneity of the statistical state arises through a spontaneous symmetry breaking. The transition from a state of homogeneous spatio-temporal chaos to one exhibiting spatial order is explained by introducing a collective viscosity which relates the averaged pattern with a correlation of the fluctuations.Comment: 11 pages (Revtex) + 5 figures (postscript

Electronic structures of Zn1−x_{1-x}Cox_xO using photoemission and x-ray absorption spectroscopy

Electronic structures of Zn$_{1-x}$Co$_x$O have been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Co 3d states are found to lie near the top of the O $2p$ valence band, with a peak around $\sim 3$ eV binding energy. The Co $2p$ XAS spectrum provides evidence that the Co ions in Zn$_{1-x}$Co$_{x}$O are in the divalent Co$^{2+}$ ($d^7$) states under the tetrahedral symmetry. Our finding indicates that the properly substituted Co ions for Zn sites will not produce the diluted ferromagnetic semiconductor property.Comment: 3 pages, 2 figure

Tunneling anisotropic magnetoresistance in multilayer-(Co/Pt)/AlOx/Pt structures

We report observations of tunneling anisotropic magnetoresitance (TAMR) in vertical tunnel devices with a ferromagnetic multilayer-(Co/Pt) electrode and a non-magnetic Pt counter-electrode separated by an AlOx barrier. In stacks with the ferromagnetic electrode terminated by a Co film the TAMR magnitude saturates at 0.15% beyond which it shows only weak dependence on the magnetic field strength, bias voltage, and temperature. For ferromagnetic electrodes terminated by two monolayers of Pt we observe order(s) of magnitude enhancement of the TAMR and a strong dependence on field, temperature and bias. Discussion of experiments is based on relativistic ab initio calculations of magnetization orientation dependent densities of states of Co and Co/Pt model systems.Comment: 4 pages, 5 figures, to be published in Phys. Rev. Let