Relation of Curie temperature and conductivity: (Ga,Mn)As alloy as a case study

Experimental investigations of diluted magnetic semiconductors indicate a strong relation between Curie temperature and conductivity. Both quantities depend non trivially on the concentration of magnetic impurities, the carrier density, and the presence of compensating defects. We calculate both Curie temperature and conductivity of (Ga,Mn)As alloys in a selfconsistent manner based on the same first principles Hamiltonian in which the presence of compensating defects is taken into account. The effect of As-antisites and Mn-interstitials is determined separately and a good agreement between theory and experiment exists only in the case where the dominating mechanism of is due to the Mn-interstitials.Comment: The manuscript is accepted for publication in AP

On the origin of temperature dependence of interlayer exchange coupling in metallic trilayers

We study the influence of collective magnetic excitations on the interlayer exchange coupling (IEC) in metallic multilayers. The results are compared to other models that explain the temperature dependence of the IEC by mechanisms within the spacer or at the interfaces of the multilayers. As a main result we find that the reduction of the IEC with temperature shows practically the same functional dendence in all models. On the other hand the influence of the spacer thickness, the magnetic material, and an external field are quite different. Based on these considerations we propose experiments, that are able to determine the dominating mechanism that reduces the IEC at finite temperatures.Comment: 8 pages, 7 figures, accepted for PR

Correlated Doping in Semiconductors: The Role of Donors in III-V Diluted Magnetic Semiconductors

We investigate the compositional dependence of the total energy of the mixed crystals (Ga,Mn)As co-doped with As, Sn, and Zn. Using the ab initio LMTO-CPA method we find a correlation between the incorporation of acceptors (Mn, Zn) and donors (Sn, antisite As). In particular, the formation energy of As_Ga is reduced by approx. 0.1 eV in the presence of Mn, and vice versa. This leads to the self-compensating behavior of (Ga,Mn)As.Comment: 8 pages, 2 figures, presented at the XXXI Int. School of Semiconducting Compounds, Jaszowiec 2002, Polan

Magnetoresistance of a semiconducting magnetic wire with domain wall

We investigate theoretically the influence of the spin-orbit interaction of Rashba type on the magnetoresistance of a semiconducting ferromagnetic nanostructure with a laterally constrained domain wall. The domain wall is assumed sharp (on the scale of the Fermi wave length of the charge carriers). It is shown that the magnetoresistance in such a case can be considerably large, which is in a qualitative agreement with recent experimental observations. It is also shown that spin-orbit interaction may result in an increase of the magnetoresistance. The role of localization corrections is also briefly discussed.Comment: 5 pages, 2 figure

Optical conductivity of Mn doped GaAs

We study the optical conductivity in the III-V diluted magnetic semiconductor GaMnAs and compare our calculations to available experimental data. Our model study is able to reproduce both qualitatively and quantitatively the observed measurements. We show that compensation (low carrier density) leads, in agreement to the observed measurements to a red shift of the broad peak located at approximately 200 meV for the optimally annealed sample. The non perturbative treatment appears to be essential, otherwise a blueshift and an incorrect amplitude would be obtained. By calculating the Drude weight (order parameter) we establish the metal-insulator phase diagram. We indeed find that Mn doped GaAs is close to the metal-insulator transition and that for 5$$ and 7$$ doped samples, 20$$ of the carriers only are delocalized. We have found that the optical mass is approximately 2 m$_{e}$. We have also interesting results for overdoped samples which could be experimentally realized by Zn codoping.Comment: the manuscript has been extended, new figures are include

Tunneling of Bloch electrons through vacuum barrier

Tunneling of Bloch electrons through a vacuum barrier introduces new physical effects in comparison with the textbook case of free (plane wave) electrons. For the latter, the exponential decay rate in the vacuum is minimal for electrons with the parallel component of momentum ${\bf k}_\parallel=0$, and the prefactor is defined by the electron momentum component in the normal to the surface direction. However, the decay rate of Bloch electrons may be minimal at an arbitrary ${\bf k}_\parallel$ (``hot spots''), and the prefactor is determined by the electron's group velocity, rather than by its quasimomentum.Comment: 4 pages, no fig