Effect of well-width on the electro-optical properties of a quantum well

We record photoreflectance from Ge/GeSi modulation doped quantum wells possessing $10^4$ V/cm perpendicular electric fields. Qualitatively very different spectra are obtained from samples of well-width 100 \AA and 250 \AA. Comparing the wavefunctions calculated from an $8 \times 8$ \textbf{k.p} theory, we find that while they remain confined in the narrower 100 \AA QW, the electric field causes them to tunnel into the forbidden gap in the 250 \AA\ well. This implies that the samples should show a transition from the quantum confined Franz-Keldysh effect to the bulk-like Franz-Keldysh effect. Close to the band-edge where Franz-Keldysh effects are important, simulated photoreflectance spectra reproduce the essential features of the experiment, without any adjustable parameters.Comment: 8 pages, 8 figures. Submitted to Phys. Rev.

Secondary crystalline phases identification in Cu2ZnSnSe4 thin films: contributions from Raman scattering and photoluminescence

In this work, we present the Raman peak positions of the quaternary pure selenide compound Cu2ZnSnSe4 (CZTSe) and related secondary phases that were grown and studied under the same conditions. A vast discussion about the position of the X-ray diffraction (XRD) reflections of these compounds is presented. It is known that by using XRD only, CZTSe can be identified but nothing can be said about the presence of some secondary phases. Thin films of CZTSe, Cu2SnSe3, ZnSe, SnSe, SnSe2, MoSe2 and a-Se were grown, which allowed their investigation by Raman spectroscopy (RS). Here we present all the Raman spectra of these phases and discuss the similarities with the spectra of CZTSe. The effective analysis depth for the common back-scattering geometry commonly used in RS measurements, as well as the laser penetration depth for photoluminescence (PL) were estimated for different wavelength values. The observed asymmetric PL band on a CZTSe film is compatible with the presence of CZTSe single-phase and is discussed in the scope of the fluctuating potentials’ model. The estimated bandgap energy is close to the values obtained from absorption measurements. In general, the phase identification of CZTSe benefits from the contributions of RS and PL along with the XRD discussion.info:eu-repo/semantics/publishedVersio

Optical transitions in strained Ge/Si superlattices

Spectroscopic ellipsometry has been used to determine the dielectric functions of ultrathin Ge/Si superlattices with varying strain states and periodicity at room temperature. The E1-like transitions could be resolved with the multiple-angle-of-incidence technique and in a thick, Ge-rich sample; they split up into various contributions and start to absorb the light at lower energies than compositionally equivalent alloys, as predicted theoretically. The E2 transitions are shifted towards lower energies and split into a doublet. Both of its components show a shift due to the hydrostatic component of the internal strain, which is approximately half of what one would expect from the corresponding deformation potentials of the constituent bulk materials. While both transitions decrease in energy with increasing period, only the lower peak shows a variation of its amplitude and broadening with period, yielding evidence for confinement effects