Experimental observation of nanoscale radiative heat flow due to surface plasmons in graphene and doped silicon

Owing to its two dimensional electronic structure, graphene exhibits many unique properties. One of them is a wave vector and temperature dependent plasmon in the infrared range. Theory predicts that due to these plasmons, graphene can be used as a universal material to enhance nanoscale radiative heat exchange for any dielectric substrate. Here we report on radiative heat transfer experiments between SiC and a SiO2 sphere which have non matching phonon polariton frequencies, and thus only weakly exchange heat in near field. We observed that the heat flux contribution of graphene epitaxially grown on SiC dominates at short distances. The influence of plasmons on radiative heat transfer is further supported with measurements for doped silicon. These results highlight graphenes strong potential in photonic nearfield and energy conversion devices.Comment: 4 pages, 3 figure

Weak antilocalization in epitaxial graphene: evidence for chiral electrons

Transport in ultrathin graphite grown on silicon carbide is dominated by the electron-doped epitaxial layer at the interface. Weak anti-localization in 2D samples manifests itself as a broad cusp-like depression in the longitudinal resistance for magnetic fields 10 mT$< B <$ 5 T. An extremely sharp weak-localization resistance peak at B=0 is also observed. These features quantitatively agree with graphene weak-(anti)localization theory implying the chiral electronic character of the samples. Scattering contributions from the trapped charges in the substrate and from trigonal warping due to the graphite layer on top are tentatively identified. The Shubnikov-de Haas oscillations are remarkably small and show an anomalous Berry's phase.Comment: 5 pages, 4 figures. Minor change

Participatory plant breeding: a way to arrive at better-adapted onion varieties

The search for varieties that are better adapted to organic farming is a current topic in the organic sector. Breeding programmes specific for organic agriculture should solve this problem. Collaborating with organic farmers in such programmes, particularly in the selection process, can potentially result in varieties better adapted to their needs. Here, we assume that organic farmers' perceptive of plant health is broader than that of conventional breeders. Two organic onion farmers and one conventional onion breeder were monitored in their selection activities in 2004 and 2005 in order to verify whether and in which way this broader view on plant health contributes to improvement of organic varieties. They made selections by positive mass selection in three segregating populations under organic conditions. The monitoring showed that the organic farmers selected in the field for earliness and downy mildew and after storage for bulb characteristics. The conventional breeder selected only after storage. Farmers and breeder applied identical selection directions for bulb traits as a round shape, better hardness and skin firmness. This resulted in smaller bulbs in the breeders’ populations, while the bulbs in the farmer populations were bigger than in the original population. In 2006 and 2007 the new onion populations will be compared with each other and the original populations to determine the selection response

Plasmon assisted transport through disordered array of quantum wires

Phononless plasmon assisted thermally activated transport through a long disordered array of finite length quantum wires is investigated analytically. Generically strong electron plasmon interaction in quantum wires results in a qualitative change of the temperature dependence of thermally activated resistance in comparison to phonon assisted transport. At high temperatures, the thermally activated resistance is determined by the Luttinger liquid interaction parameter of the wires.Comment: 7 pages, 1 figure, final version as publishe

Probing terahertz surface plasmon waves in graphene structures

Epitaxial graphene mesas and ribbons are investigated using terahertz (THz) nearfield microscopy to probe surface plasmon excitation and THz transmission properties on the sub-wavelength scale. The THz near-field images show variation of graphene properties on a scale smaller than the wavelength, and excitation of THz surface waves occurring at graphene edges, similar to that observed at metallic edges. The Fresnel reflection at the substrate SiC/air interface is also found to be altered by the presence of graphene ribbon arrays, leading to either reduced or enhanced transmission of the THz wave depending on the wave polarization and the ribbon width.Comment: accepted for publication in Applied Physics Lette

Evidence for Interlayer Electronic Coupling in Multilayer Epitaxial Graphene from Polarization Dependent Coherently Controlled Photocurrent Generation

Most experimental studies to date of multilayer epitaxial graphene on C-face SiC have indicated that the electronic states of different layers are decoupled as a consequence of rotational stacking. We have measured the third order nonlinear tensor in epitaxial graphene as a novel approach to probe interlayer electronic coupling, by studying THz emission from coherently controlled photocurrents as a function of the optical pump and THz beam polarizations. We find that the polarization dependence of the coherently controlled THz emission expected from perfectly uncoupled layers, i.e. a single graphene sheet, is not observed. We hypothesize that the observed angular dependence arises from weak coupling between the layers; a model calculation of the angular dependence treating the multilayer structure as a stack of independent bilayers with variable interlayer coupling qualitatively reproduces the polarization dependence, providing evidence for coupling.Comment: submitted to Nano Letter

Half integer quantum Hall effect in high mobility single layer epitaxial graphene

The quantum Hall effect, with a Berry's phase of $\pi$ is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is $\sim$ 20,000 cm$^2$/V$\cdot$s at 4 K and ~15,000 cm$^2$/V$\cdot$s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO$_2$ and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics.Comment: Some modifications in the text and figures, 7 pages, 2 figure

Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene

Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers.Comment: 5 pages, 2 figures, to appear in Phys. Rev.

Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: A comparison

Magneto-transmission of a thin layer of bulk graphite is compared with spectra taken on multilayer epitaxial graphene prepared by thermal decomposition of a SiC crystal. We focus on the spectral features evolving as \sqrt{B}, which are evidence for the presence of Dirac fermions in both materials. Whereas the results on multi-layer epitaxial graphene can be interpreted within the model of 2D Dirac fermions, the data obtained on bulk graphite can only be explained taking into account the 3D nature of graphite, e.g. by using the standard Slonczewski-Weiss-McClure model.Comment: 5 pages, 2 figure