2,143 research outputs found
Equilibrium and eigenfunctions estimates in the semi-classical regime
We establish eigenfunctions estimates, in the semi-classical regime, for
critical energy levels associated to an isolated singularity. For Schr\"odinger
operators, the asymptotic repartition of eigenvectors is the same as in the
regular case, excepted in dimension 1 where a concentration at the critical
point occurs. This principle extends to pseudo-differential operators and the
limit measure is the Liouville measure as long as the singularity remains
integrable.Comment: 13 pages, 1 figure, perhaps to be revise
Three-dimensional carrier-dynamics simulation of terahertz emission from photoconductive switches
A semi-classical Monte Carlo model for studying three-dimensional carrier
dynamics in photoconductive switches is presented. The model was used to
simulate the process of photoexcitation in GaAs-based photoconductive antennas
illuminated with pulses typical of mode-locked Ti:Sapphire lasers. We analyzed
the power and frequency bandwidth of THz radiation emitted from these devices
as a function of bias voltage, pump pulse duration and pump pulse location. We
show that the mechanisms limiting the THz power emitted from photoconductive
switches fall into two regimes: when illuminated with short duration (<40 fs)
laser pulses the energy distribution of the Gaussian pulses constrains the
emitted power, while for long (>40 fs) pulses, screening is the primary
power-limiting mechanism. A discussion of the dynamics of bias field screening
in the gap region is presented. The emitted terahertz power was found to be
enhanced when the exciting laser pulse was in close proximity to the anode of
the photoconductive emitter, in agreement with experimental results. We show
that this enhancement arises from the electric field distribution within the
emitter combined with a difference in the mobilities of electrons and holes.Comment: 7 pages, 7 figure
Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches
We simulate the terahertz emission from laterally-biased InGaAs and InP using
a three-dimensional carrier dynamics model in order to optimise the
semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire
and Er:fibre lasers are chosen, and the simulation models the semiconductor's
bandstructure using parabolic Gamma, L and X valleys, and heavy holes. The
emitted terahertz radiation is propagated within the semiconductor and into
free space using a model based on the Drude-Lorentz dielectric function. As the
InGaAs alloy approaches InAs an increase in the emitted power is observed, and
this is attributed to a greater electron mobility. Additionally,
low-temperature grown and ion-implanted InGaAs are modelled using a finite
carrier trapping time. At sub-picosecond trapping times the terahertz bandwidth
is found to increase significantly at the cost of a reduced emission power.Comment: 9 pages, 7 figure
Charge trapping in polymer transistors probed by terahertz spectroscopy and scanning probe potentiometry
Terahertz time-domain spectroscopy and scanning probe potentiometry were used
to investigate charge trapping in polymer field-effect transistors fabricated
on a silicon gate. The hole density in the transistor channel was determined
from the reduction in the transmitted terahertz radiation under an applied gate
voltage. Prolonged device operation creates an exponential decay in the
differential terahertz transmission, compatible with an increase in the density
of trapped holes in the polymer channel. Taken in combination with scanning
probe potentionmetry measurements, these results indicate that device
degradation is largely a consequence of hole trapping, rather than of changes
to the mobility of free holes in the polymer.Comment: 4 pages, 3 figure
Local Swift-BAT active galactic nuclei prefer circumnuclear star formation
We use Herschel data to analyze the size of the far-infrared 70micron
emission for z<0.06 local samples of 277 hosts of Swift-BAT selected active
galactic nuclei (AGN), and 515 comparison galaxies that are not detected by
BAT. For modest far-infrared luminosities 8.5<log(LFIR)<10.5, we find large
scatter of half light radii Re70 for both populations, but a typical Re70 <~ 1
kpc for the BAT hosts that is only half that of comparison galaxies of same
far-infrared luminosity. The result mostly reflects a more compact distribution
of star formation (and hence gas) in the AGN hosts, but compact AGN heated dust
may contribute in some extremely AGN-dominated systems. Our findings are in
support of an AGN-host coevolution where accretion onto the central black hole
and star formation are fed from the same gas reservoir, with more efficient
black hole feeding if that reservoir is more concentrated. The significant
scatter in the far-infrared sizes emphasizes that we are mostly probing spatial
scales much larger than those of actual accretion, and that rapid accretion
variations can smear the distinction between the AGN and comparison categories.
Large samples are hence needed to detect structural differences that favour
feeding of the black hole. No size difference AGN host vs. comparison galaxies
is observed at higher far-infrared luminosities log(LFIR)>10.5 (star formation
rates >~ 6 Msun/yr), possibly because these are typically reached in more
compact regions in the first place.Comment: 7 pages, 3 figures, accepted for publication in Astronomy &
Astrophysic
Polarisation-sensitive terahertz detection by multicontact photoconductive receivers
We have developed a terahertz radiation detector that measures both the
amplitude and polarization of the electric field as a function of time. The
device is a three-contact photoconductive receiver designed so that two
orthogonal electric-field components of an arbitrary polarized electromagnetic
wave may be detected simultaneously. The detector was fabricated on Fe+
ion-implanted InP. Polarization-sensitive detection is demonstrated with an
extinction ratio better than 100:1. This type of device will have immediate
application in studies of birefringent and optically active materials in the
far-infrared region of the spectrum.Comment: 3 pages, 3 figure
Fundamental solutions for semidiscrete evolution equations via Banach algebras
We give representations for solutions of time-fractional differential equations that involve operators on Lebesgue spaces of sequences defined by discrete convolutions involving kernels through the discrete Fourier transform. We consider finite difference operators of first and second orders, which are generators of uniformly continuous semigroups and cosine functions. We present the linear and algebraic structures (in particular, factorization properties) and their norms and spectra in the Lebesgue space of summable sequences. We identify fractional powers of these generators and apply to them the subordination principle. We also give some applications and consequences of our results
Soutiens perçus, engagements affectifs et succès de carrière subjectif : une approche en termes de profils
Perceived support, affective commitments and subjective career success: a person-centred approach (Soutiens perçus, engagements affectifs et succès de carrière subjectif : une approche en termes de profils)
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