38 research outputs found

    Manejo dos Reprodutores de Frango de Corte Colonial Embrapa 042. (Manual de Instruções)

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    bitstream/item/123379/1/DOC-079.pd

    Manejo dos reprodutores:Embrapa 051.

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    bitstream/item/57725/1/doc80.pd

    Manejo dos reprodutores das poedeiras Embrapa 031: manual de instruções.

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    bitstream/item/123345/1/DOC-78.pd

    Rearranged (4 -> 2)-abeo-clerodane and clerodane diterpenes from Aristolochia chamissonis

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    From stems of Aristolochia chamissonis Duch., five new diterpenes, one rearranged (4 --> 2)-abeo-clerodane and four ent-clerodanes, were isolated. Their structures were determined to be (+)-(4 --> 2)-abeo-kolavelool-3-oic acid, (-)-13-epi-2-oxokolavelool, (-)-2 beta-hydroxykolavelool, (-)-2 beta-hydroperoxykolavelool and (+)- 13-epi-2 alpha-hydroxykolavelool. In addition, lignans, sesquiterpenes, steroids and two known ent-clerodane diterpenes were isolated. (C) 1998 Elsevier B.V. Ltd. All rights reserved

    Si/SiGe-Heterobipolartransistoren fuer integrierte Schaltungen hoechster Geschwindigkeit Abschlussbericht

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    The first prototype of a self-adjusting Si/SiGe heterobipolar transistor (HBT) suited for integrated circuits was developed within the framework of this joint project. The HBT is characterized by implanted contacts and by an exalted spacer oxide on the emitter mesa edges. Guides are connected by means of a well-planarizing auxiliary polyimide layer. The entire chip is covered with passivating SiO_2. Two-layer metallization can be applied due to low-stepped individual sections. The relatively great base-collector capacity at the present stage of development is due to the existing simple mask technique as well as to preliminary base contacting in an additional contact zone. The low collector doping of 3 x 10"1"6/cm"3 which is selected for integrated circuits reduces the critical frequency of the individual transistor and adds to problems which result from e.g. line and valence band offsets. The maximum HBT transit frequency has been amounting to 40 GHz. Sputtered WSi_2 films on SiO_2 are used for implementation of integrated-circuit resistances. After circuit simulations of a multiplexer IC, an MUX layout was developed, and the first process steps were made. (orig.)Available from TIB Hannover: F94B981+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman

    Fabrication and spectroscopic studies on highly luminescent CdSe/CdS nanorod polymer composites

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    Highly luminescent nanocomposites were prepared by incorporating CdSe/CdS core/shell nanorods into different polymer matrices. The resulting nanocomposites show high transparency of up to 93%. A photoluminescence quantum efficiency of 70% was obtained, with an optimum combination of nanorod (0.05 wt %) and at a UV-initiator concentration of 0.1 wt % for poly(lauryl methacrylate). Nanorods tend to agglomerate in cellulose triacetate
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