Monte Carlo simulation of particle-induced bit upsets

We investigate the issue of radiation-induced failures in electronic devices by developing a Monte Carlo tool called MC-Oracle. It is able to transport the particles in device, to calculate the energy deposited in the sensitive region of the device and to calculate the transient current induced by the primary particle and the secondary particles produced during nuclear reactions. We compare our simulation results with SRAM experiments irradiated with neutrons, protons and ions. The agreement is very good and shows that it is possible to predict the soft error rate (SER) for a given device in a given environment

Étude de matériaux de contact électrique Ag-SnO2 (frittage et rôle des additifs)

PARIS-BIUSJ-Thèses (751052125) / SudocLIMOGES-ENSCI (870852305) / SudocPARIS-BIUSJ-Physique recherche (751052113) / SudocSudocFranceF

Effet du faible débit dose sur les technologies bipolaires

Les technologies bipolaires jouent des rôles primordiaux dans les systèmes spatiaux soumis à des conditions radiatives. Dans un environnement ionisant, le courant de base des transistors bipolaires augmente et le gain en courant diminue. L'augmentation de la recombinaison dans la région de déplétion base-émetteur est le mécanisme principal responsable de l'accroissement du courant de base. Pour une même dose totale, de nombreuses technologies bipolaires se dégradent plus à faible débit de dose qu'à fort débit ce qui soulève un problème au niveau du durcissement. Des méthodes de prédiction de la réponse faible débit de dose, utilisant les moyens disponibles en laboratoires, telle que les irradiations en températures, ont données des résultats prometteurs pour l'identification de technologies montrant une augmentation de la dégradation à faible débit de dose. Cependant, aucun test s'appliquant à toutes les technologies bipolaires n'a été identifié. C'est dans ce cadre que s'inscrit notre travail de thèse. Ce travail consiste à étudier et à améliorer les méthodes de test actuelles dans le but d'établir un unique test applicable à toutes les technologies bipolaires. En se basant sur un travail expérimental, une explication physique des phénomènes se produisant au cours d'irradiations à températures élevées a été donnée et un modèle de dégradation a été développé. A partir de l'observation des résultats obtenus, une nouvelle approche du test de composants est proposée. Cette approche est basée sur la commutation d'un fort débit de dose vers un faible débit.Bipolar technologies play a variety of important roles in space systems where they are exposed to radiation. In an ionizing environment, the base current of bipolar transistors increases and the current gain decreases. Increased recombination in the emitter-base depletion region is the main mechanism responsible for the increased base current. Many bipolar technologies degrade more at low dose rates than at high dose rates for a given total dose what is a difficult hardness assurance challenge. Methods of predicting the low-dose-rate response using laboratory dose rates, including irradiation at high temperature, have been reasonably successful at identifying technologies that suffer from ELDRS, but it is still difficult to identify a single test for all bipolar technologies. The aim of this work is then to investigate and improve the present methods in order to establish a sigle test for all bipolar technologies. Based on experimental results, physical explanation of phenomena occurring during elevated temperature irradiations has been proposed and a model of degradation has been expanded. From the observation of all the obtained results, a new approach of the device testing, based on the switching from high dose rate to low dose rate has been proposed.REIMS-BU Sciences (514542101) / SudocSudocFranceF

Dose and Dose Rate Effects in Micro-Electronics: Pushing the Limits to Extreme Conditions

International audienc

A mixed TCAD/Electrical simulation laboratory to open up the microelectronics teaching

International audienceIn classical microelectronics engineer curriculum, students have to acquire skills in device physics as well as in analog and digital IC design. As a rule, each course is illustrated in a dedicated CAD tools laboratory. Over time, this method leads to a compartmentalizing of the teaching by putting conceptual barrier in the student's mind. This article proposes a laboratory in which students can mix TCAD electrical and SPICE simulation. With this tutorial, the instructor is able to highlight the possible interdependence between these tools but overall he demonstrates students that associated teachings are linked and share the same objectives

A toolkit to demystify CMOS Active Pixel Sensors

International audienceNo specific pedagogical methods are dedicated to explain the specificity of CMOS Active Pixel Sensor (APS) technologies. Nevertheless, this technology of image sensing is wide-spread in today's life and needs a good understanding on behalf of our students in microelectronics. This paper proposes a toolkit implemented with MATLAB. This toolkit can help the student to find out the architecture of an active pixel sensor imager. With such approach, student is able to easily control, visualize and understand how an image is elaborated

Highlight of Total Ionizing Dose Effects on a RF Front-end by means of Microwave Nonlinear Characterization

International audienc

Highlight of Total Ionizing Dose Effects on a RF Front-end by means of Microwave Nonlinear Characterization

International audienc

Monte Carlo simulation of particle-induced bit upsets

We investigate the issue of radiation-induced failures in electronic devices by developing a Monte Carlo tool called MC-Oracle. It is able to transport the particles in device, to calculate the energy deposited in the sensitive region of the device and to calculate the transient current induced by the primary particle and the secondary particles produced during nuclear reactions. We compare our simulation results with SRAM experiments irradiated with neutrons, protons and ions. The agreement is very good and shows that it is possible to predict the soft error rate (SER) for a given device in a given environment

Monte Carlo simulation of particle-induced bit upsets

We investigate the issue of radiation-induced failures in electronic devices by developing a Monte Carlo tool called MC-Oracle. It is able to transport the particles in device, to calculate the energy deposited in the sensitive region of the device and to calculate the transient current induced by the primary particle and the secondary particles produced during nuclear reactions. We compare our simulation results with SRAM experiments irradiated with neutrons, protons and ions. The agreement is very good and shows that it is possible to predict the soft error rate (SER) for a given device in a given environment