1 research outputs found
Relating Hysteresis and Electrochemistry in Graphene Field Effect Transistors
Hysteresis and commonly observed p-doping of graphene based field effect
transistors (FET) was already discussed in reports over last few years.
However, the interpretation of experimental works differs; and the mechanism
behind the appearance of the hysteresis and the role of charge transfer between
graphene and its environment are not clarified yet. We analyze the relation
between electrochemical and electronic properties of graphene FET in moist
environment extracted from the standard back gate dependence of the graphene
resistance. We argue that graphene based FET on a regular SiO2 substrate
exhibits behavior that corresponds to electrochemically induced hysteresis in
ambient conditions, and can be caused by charge trapping mechanism associated
with sensitivity of graphene to the local pH.Comment: 5 pages, 3 figure