13 research outputs found
Current-Induced Magnetization Switching and CPP-GMR in 30 nm φ Scale Spin Valves Fabricated Using EB-Assisted CVD Hard Masks
Ultrafast spin-to-charge conversions of antiferromagnetic (111)-oriented -
Antiferromagnetic - combines outstanding
spin-transport properties with magnons in the terahertz (THz) frequency range.
However, the THz radiation emitted by ultrafast spin-to-charge conversion via
the inverse spin Hall effect remains unexplored. In this study, we measured the
THz emission and transmission of a permalloy/(111)-oriented
- multilayer by THz time-domain spectroscopy.
The spin Hall angle was determined to be approximately constant at 0.024 within
a frequency range of 0.3-2.2 THz, in comparison with the THz spectroscopy of a
permalloy/Pt multilayer. Our results not only demonstrate the potential of
- as a spintronic THz emitter but also provide
insights into the THz spin transport properties of
-.Comment: 11 pages, 5 figure
Transport Properties of Magnetic Tunnel Junctions Comprising NiFeSiB/CoFeB Hybrid Free Layers
Current-Induced Magnetization Switching and CPP-GMR in 30 nm φ Scale Spin Valves Fabricated Using EB-Assisted CVD Hard Masks
Antiperovskite Magnetic Materials with 2p Light Elements for Future Practical Applications
Abstract Light elements having 2p electrons such as B, C, and N are common elements that have played an important role in various functional materials. In particular, nitrides have long been used in the development of semiconductors, superconductors, and magnets. More recently, Fe‐ and Mn‐based antiperovskite‐type compounds with light elements have attracted considerable attention in the field of spintronic engineering, because of the development of intriguing and practical applications making them one of the key materials for future devices. In this article, it is first reviewed the evolution of applications and which light elements are employed. Then the representative applications and characteristics of the light elements, including magnetoresistive effects, magnetization switching, current‐spin and thermoelectric conversions, magnetic anisotropy, and domain nucleation are individually highlighted. Additionally, the crystal structure, fundamental properties, and theoretical study are addressed to enable a deeper understanding of the role of light elements in the unit cell. Beyond compounds with N, a demonstration using B and C is discussed to examine their effect on the magnetic structures of antiperovskite compounds. Finally, prospective and future strategies are discussed to build a platform of practical material based on light elements