2 research outputs found
Domain wall resistance in CoFeB-based heterostructures with interface Dzyaloshinskii-Moriya interaction
We have studied the domain wall resistance in W/Ta/CoFeB/MgO
heterostructures. The Ta layer thickness is varied to control the type of
domain walls via changes in the interfacial Dzyaloshinskii Moriya interaction.
We find a nearly constant domain wall resistance against the Ta layer
thickness. Adding contributions from the anisotropic magnetoresistance, spin
Hall magnetoresistance and anomalous Hall effect describe well the domain wall
resistance of the thick Ta layer films. However, a discrepancy remains for the
thin Ta layer films wherein chiral N\'eel-like domain walls are found. These
results show the difficulty of studying the domain wall type from resistance
measurements
Highly efficient spin orbit torque in Pt/Co/Ir multilayers with antiferromagnetic interlayer exchange coupling
We have studied the spin orbit torque (SOT) in Pt/Co/Ir multilayers with 3
repeats of the unit structure. As the system exhibits oscillatory interlayer
exchange coupling (IEC) with varying Ir layer thickness, we compare the SOT of
films when the Co layers are coupled ferromagnetically and
antiferromagnetically. SOT is evaluated using current induced shift of the
anomalous Hall resistance hysteresis loops. A relatively thick Pt layer,
serving as a seed layer to the multilayer, is used to generate spin current via
the spin Hall effect. In the absence of antiferromagnetic coupling, the SOT is
constant against the applied current density and the corresponding spin torque
efficiency (i.e. the effective spin Hall angle) is 0.09, in agreement
with previous reports. In contrast, for films with antiferromagnetic coupling,
the SOT increases with the applied current density and eventually saturates.
The SOT at saturation is a factor of 15 larger than that without the
antiferromagnetic coupling. The spin torque efficiency is 5 times larger
if we assume the net total magnetization is reduced by a factor of 3 due to the
antiferromagnetic coupling. Model calculations based on the Landau Lifshitz
Gilbert equation show that the presence of antiferromagnetic coupling can
increase the SOT but the degree of enhancement is limited, in this case, to a
factor of 1.2-1.4. We thus consider there are other sources of SOT, possibly at
the interfaces, which may account for the highly efficient SOT in the
uncompensated synthetic anti-ferromagnet (SAF) multilayers