2 research outputs found

    Domain wall resistance in CoFeB-based heterostructures with interface Dzyaloshinskii-Moriya interaction

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    We have studied the domain wall resistance in W/Ta/CoFeB/MgO heterostructures. The Ta layer thickness is varied to control the type of domain walls via changes in the interfacial Dzyaloshinskii Moriya interaction. We find a nearly constant domain wall resistance against the Ta layer thickness. Adding contributions from the anisotropic magnetoresistance, spin Hall magnetoresistance and anomalous Hall effect describe well the domain wall resistance of the thick Ta layer films. However, a discrepancy remains for the thin Ta layer films wherein chiral N\'eel-like domain walls are found. These results show the difficulty of studying the domain wall type from resistance measurements

    Highly efficient spin orbit torque in Pt/Co/Ir multilayers with antiferromagnetic interlayer exchange coupling

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    We have studied the spin orbit torque (SOT) in Pt/Co/Ir multilayers with 3 repeats of the unit structure. As the system exhibits oscillatory interlayer exchange coupling (IEC) with varying Ir layer thickness, we compare the SOT of films when the Co layers are coupled ferromagnetically and antiferromagnetically. SOT is evaluated using current induced shift of the anomalous Hall resistance hysteresis loops. A relatively thick Pt layer, serving as a seed layer to the multilayer, is used to generate spin current via the spin Hall effect. In the absence of antiferromagnetic coupling, the SOT is constant against the applied current density and the corresponding spin torque efficiency (i.e. the effective spin Hall angle) is ∼\sim0.09, in agreement with previous reports. In contrast, for films with antiferromagnetic coupling, the SOT increases with the applied current density and eventually saturates. The SOT at saturation is a factor of ∼\sim15 larger than that without the antiferromagnetic coupling. The spin torque efficiency is ∼\sim5 times larger if we assume the net total magnetization is reduced by a factor of 3 due to the antiferromagnetic coupling. Model calculations based on the Landau Lifshitz Gilbert equation show that the presence of antiferromagnetic coupling can increase the SOT but the degree of enhancement is limited, in this case, to a factor of 1.2-1.4. We thus consider there are other sources of SOT, possibly at the interfaces, which may account for the highly efficient SOT in the uncompensated synthetic anti-ferromagnet (SAF) multilayers
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