THz intervalence band antipolaritons

THz polaritons and antipolaritons have strong potential for device applications and are a challenging field of fundamental studies. In this paper, we start from a numerically exact nonequilibrium many body solutions and adjust it to a simplified nonlinear dielectric constant approach to the optical susceptibility. The resulting expression is inserted in the wave equation to describe the coupling of TE-polarized THz radiation with an intervalence band transition in GaAs/Al0.3Ga0.7As multiple quantum wells embedded in microcavities. The energy dispersions relations leading to THz polaritons are investigated. Here we focus on the impact of dephasing and scattering processes for different structures and excitation conditions in an inverted medium leading to antipolaritons

The relevance of dephasing in THz intervalence band antipolariton dispersion relations

In this paper, we investigate the combined influence of cavity, active region length and dephasing in the coupling of TE polarized THz radiation with intervalence transitions in excited semiconductor quantum well media