Combined Raman scattering photoluminescence analysis of Cu In,Ga Se2 electrodeposited layers

This work reports the optical non destructive assessment of the relative Ga content in Cu In,Ga Se2 absorbers synthesized from electrodeposited precursors using combined photoluminescence PL and Raman scattering. Comparison of the PL measurements with the Auger Spectroscopy characterization of the layers has allowed performing a calibration of the dependence of the PL peak energy on the absorber composition. This opens the possibility for the nondestructive chemical assessment of the absorbers synthesized with these low cost processes. Extension of these measurements using a confocal microscope demonstrates their viability for the nondestructive quantitative chemical profiling of the layers. Correlation of these data with Raman spectra measured with the same experimental setup allows deepening in the interpretation of the spectra, giving additional information related to the microcrystalline quality of the layers and the presence of secondary phase