Electronic structure of Ca1−x_{1-x}Srx_xVO3_3: a tale of two energy-scales

We investigate the electronic structure of Ca$_{1-x}$Sr$_x$VO$_3$ using photoemission spectroscopy. Core level spectra establish an electronic phase separation at the surface, leading to distinctly different surface electronic structure compared to the bulk. Analysis of the photoemission spectra of this system allowed us to separate the surface and bulk contributions. These results help us to understand properties related to two vastly differing energy-scales, namely the low energy-scale of thermal excitations (~$k_{B}T$) and the high-energy scale related to Coulomb and other electronic interactions.Comment: 4 pages and 3 figures. Europhysics Letters (appearing

Fermi Surface of 3d^1 Perovskite CaVO3 Near the Mott Transition

We present a detailed de Haas van Alphen effect study of the perovskite CaVO3, offering an unprecedented test of electronic structure calculations in a 3d transition metal oxide. Our experimental and calculated Fermi surfaces are in good agreement -- but only if we ignore large orthorhombic distortions of the cubic perovskite structure. Subtle discrepancies may shed light on an apparent conflict between the low energy properties of CaVO3, which are those of a simple metal, and high energy probes which reveal strong correlations that place CaVO3 on the verge of a metal-insulator transition.Comment: 4 pages, 4 figures (REVTeX

Giant Intrinsic Spin and Orbital Hall Effects in Sr2MO4 (M=Ru,Rh,Mo)

We investigate the intrinsic spin Hall conductivity (SHC) and the d-orbital Hall conductivity (OHC) in metallic d-electron systems, by focusing on the t_{2g}-orbital tight-binding model for Sr2MO4 (M=Ru,Rh,Mo). The conductivities obtained are one or two orders of magnitude larger than predicted values for p-type semiconductors with 5% hole doping. The origin of these giant Hall effects is the ``effective Aharonov-Bohm phase'' that is induced by the d-atomic angular momentum in connection with the spin-orbit interaction and the inter-orbital hopping integrals. The huge SHC and OHC generated by this mechanism are expected to be ubiquitous in multiorbital transition metal complexes, which pens the possibility of realizing spintronics as well as orbitronics devices.Comment: 5 pages, accepted for publication in PR

Extrinsic Entwined with Intrinsic Spin Hall Effect in Disordered Mesoscopic Bars

We show that pure spin Hall current, flowing out of a four-terminal phase-coherent two-dimensional electron gas (2DEG) within inversion asymmetric semiconductor heterostructure, contains contributions from both the extrinsic mechanisms (spin-orbit dependent scattering off impurities) and the intrinsic ones (due to the Rashba coupling). While the extrinsic contribution vanishes in the weakly and strongly disordered limits, and the intrinsic one dominates in the quasiballistic limit, in the crossover transport regime the spin Hall conductance, exhibiting sample-to-sample large fluctuations and sign change, is not simply reducible to either of the two mechanisms, which can be relevant for interpretation of experiments on dirty 2DEGs [V. Sih et al., Nature Phys. 1, 31 (2005)].Comment: 5 pages, 3 color EPS figure

Perturbation theory for localized solutions of sine-Gordon equation: decay of a breather and pinning by microresistor

We develop a perturbation theory that describes bound states of solitons localized in a confined area. External forces and influence of inhomogeneities are taken into account as perturbations to exact solutions of the sine-Gordon equation. We have investigated two special cases of fluxon trapped by a microresistor and decay of a breather under dissipation. Also, we have carried out numerical simulations with dissipative sine-Gordon equation and made comparison with the McLaughlin-Scott theory. Significant distinction between the McLaughlin-Scott calculation for a breather decay and our numerical result indicates that the history dependence of the breather evolution can not be neglected even for small damping parameter

Field Effect Transistor Based on KTaO3 Perovskite

An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4 and a field effect mobility of 0.4cm^2/Vs at room temperature, both of which are much better than those of the SrTiO3 FETs reported previously. The field effect mobility was almost temperature independent down to 200K. Our results indicate that the Al2O3 / KTaO3 interface is worthy of further investigations as an alternative system of future oxide electronics.Comment: 3 pages, 3 Postscript figures, submitted to Appl.Phys.Let

Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV

Low-molecular weight heparin protamine complex augmented the potential of adipose-derived stromal cells to ameliorate limb ischemia

Center for Regenerative Medicine, Research Support Center, Dokkyo Medical University, Mibu, Tochigi, JapanCenter for Regenerative Medicine, Research Support Center, Dokkyo Medical University, Mibu, Tochigi, JapanCenter for Regenerative Medicine, Department of Cardiovascular Medicine, Dokkyo Medical University, Mibu, Tochigi, JapanCenter for Regenerative Medicine, Department of Cardiovascular Medicine, Dokkyo Medical University, Mibu, Tochigi, JapanCenter for Regenerative Medicine, Research Support Center, Dokkyo Medical University, Mibu, Tochigi, Japan:Department of Cardiology, Koshigaya Hospital, Dokkyo Medical University, Koshigaya, Saitama, JapanCenter for Regenerative Medicine, Research Support Center, Department of Cardiovascular Medicine, Dokkyo Medical University, Mibu, Tochigi, JapanCenter for Regenerative Medicine, Dokkyo Medical University, Mibu, Tochigi, Japa

Dependence of the intrinsic spin Hall effect on spin-orbit interaction character

We report on a comparative numerical study of the spin Hall conductivity in two-dimensions for three different spin-orbit interaction models; the standard k-linear Rashba model, the k-cubic Rashba model that describes two-dimensional hole systems, and a modified k-linear Rashba model in which the spin-orbit coupling strength is energy dependent. Numerical finite-size Kubo formula results indicate that the spin Hall conductivity of the k-linear Rashba model vanishes for frequency $\omega$ much smaller than the scattering rate $\tau^{-1}$, with order one relative fluctuations surviving out to large system sizes. For the k-cubic Rashba model case, the spin Hall conductivity does not depend noticeably on $\omega \tau$ and is finite in the {\em dc} limit, in agreement with experiment. For the modified k-linear Rashba model the spin Hall conductivity is noticeably $\omega \tau$ dependent but approaches a finite value in the {\em dc} limit. We discuss these results in the light of a spectral decomposition of the spin Hall conductivity and associated sum rules, and in relation to a proposed separation of the spin Hall conductivity into skew-scattering, intrinsic, and interband vertex correction contributions.Comment: 10 pages, 4 figure