10,736 research outputs found
Electronic structure of CaSrVO: a tale of two energy-scales
We investigate the electronic structure of CaSrVO using
photoemission spectroscopy. Core level spectra establish an electronic phase
separation at the surface, leading to distinctly different surface electronic
structure compared to the bulk. Analysis of the photoemission spectra of this
system allowed us to separate the surface and bulk contributions. These results
help us to understand properties related to two vastly differing energy-scales,
namely the low energy-scale of thermal excitations (~) and the
high-energy scale related to Coulomb and other electronic interactions.Comment: 4 pages and 3 figures. Europhysics Letters (appearing
Fermi Surface of 3d^1 Perovskite CaVO3 Near the Mott Transition
We present a detailed de Haas van Alphen effect study of the perovskite
CaVO3, offering an unprecedented test of electronic structure calculations in a
3d transition metal oxide. Our experimental and calculated Fermi surfaces are
in good agreement -- but only if we ignore large orthorhombic distortions of
the cubic perovskite structure. Subtle discrepancies may shed light on an
apparent conflict between the low energy properties of CaVO3, which are those
of a simple metal, and high energy probes which reveal strong correlations that
place CaVO3 on the verge of a metal-insulator transition.Comment: 4 pages, 4 figures (REVTeX
Field Effect Transistor Based on KTaO3 Perovskite
An n-channel accumulation-type field effect transistor (FET) has been
fabricated utilizing a KTaO3 single crystal as an active element and a
sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an
ON/OFF ratio of 10^4 and a field effect mobility of 0.4cm^2/Vs at room
temperature, both of which are much better than those of the SrTiO3 FETs
reported previously. The field effect mobility was almost temperature
independent down to 200K. Our results indicate that the Al2O3 / KTaO3 interface
is worthy of further investigations as an alternative system of future oxide
electronics.Comment: 3 pages, 3 Postscript figures, submitted to Appl.Phys.Let
Low temperature metallic state induced by electrostatic carrier doping of SrTiO
Transport properties of SrTiO-channel field-effect transistors with
parylene organic gate insulator have been investigated. By applying gate
voltage, the sheet resistance falls below 10 k at low
temperatures, with carrier mobility exceeding 1000 cm/Vs. The temperature
dependence of the sheet resistance taken under constant gate voltage exhibits
metallic behavior (/ 0). Our results demonstrate an insulator to
metal transition in SrTiO driven by electrostatic carrier density control.Comment: 3 pages, 4 figure
Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator
A field-effect transistor that employs a perovskite-type SrTiO3 single
crystal as the semiconducting channel is revealed to function as n-type
accumulation-mode device with characteristics similar to that of organic FET's.
The device was fabricated at room temperature by sputter-deposition of
amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The
field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room
temperature. The temperature dependence of the FE mobility down to 2K shows a
thermal-activation-type behavior with an activation energy of 0.6eV
Giant Intrinsic Spin and Orbital Hall Effects in Sr2MO4 (M=Ru,Rh,Mo)
We investigate the intrinsic spin Hall conductivity (SHC) and the d-orbital
Hall conductivity (OHC) in metallic d-electron systems, by focusing on the
t_{2g}-orbital tight-binding model for Sr2MO4 (M=Ru,Rh,Mo). The conductivities
obtained are one or two orders of magnitude larger than predicted values for
p-type semiconductors with 5% hole doping. The origin of these giant Hall
effects is the ``effective Aharonov-Bohm phase'' that is induced by the
d-atomic angular momentum in connection with the spin-orbit interaction and the
inter-orbital hopping integrals. The huge SHC and OHC generated by this
mechanism are expected to be ubiquitous in multiorbital transition metal
complexes, which pens the possibility of realizing spintronics as well as
orbitronics devices.Comment: 5 pages, accepted for publication in PR
A mechanism for unipolar resistance switching in oxide non-volatile memory devices
Building on a recently introduced model for non-volatile resistive switching,
we propose a mechanism for unipolar resistance switching in
metal-insulator-metal sandwich structures. The commutation from the high to low
resistance state and back can be achieved with successive voltage sweeps of the
same polarity. Electronic correlation effects at the metal-insulator interface
are found to play a key role to produce a resistive commutation effect in
qualitative agreement with recent experimental reports on binary transition
metal oxide based sandwich structures.Comment: 4 pages, 2 figure
Tunnel magnetoresistance and interfacial electronic state
We study the relation between tunnel magnetoresistance (TMR) and interfacial
electronic states modified by magnetic impurities introduced at the interface
of the ferromagnetic tunnel junctions, by making use of the periodic Anderson
model and the linear response theory. It is indicated that the TMR ratio is
strongly reduced depending on the position of the -levels of impurities,
based on reduction in the spin-dependent -electron tunneling in the majority
spin state. The results are compared with experimental results for Cr-dusted
ferromagnetic tunnel junctions, and also with results for metallic multilayers
for which similar reduction in giant magnetoresistance has been reported.Comment: 5 pages, 4 figures, 2 column revtex4 format, ICMFS 2002 (Kyoto
Band-width control in a perovskite-type 3d^1 correlated metal Ca_1-xSr_xVO_3. II. Optical spectroscopy investigation
Optical conductivity spectra of single crystals of Ca_1-xSr_xVO_3 have been
studied to elucidate how the electronic behavior depends on the strength of the
electron correlation without changing the nominal number of electrons per
vanadium atom. The effective mass deduced by the analysis of the Drude-like
contribution do not show critical enhancement, even though the system is close
to the Mott transition. Besides the Drude-like contribution, two anomalous
features were observed in the optical conductivity spectra of the intraband
transition within the 3d band. These features can be assigned to transitions
involving the incoherent and coherent bands near the Fermi level. The large
spectral weight redistribution in this system, however, does not involve a
large mass enhancement.Comment: 12 pages in a Phys. Rev. B camera-ready format with 16 EPS figures
embedded. LaTeX 2.09 source file using "camera.sty" and "prbplug.sty"
provided by N. Shirakawa. For OzTeX (Macintosh), use "ozfig.sty" instead of
"psfig.sty". "ozfig.sty" can be also obtained by e-mail request to N.
Shirakawa: . Submitted to Phys. Rev. B. See "Part I (by
Inoue et al.)" at cond-mat/980107
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