Case Reports: Aripripazole Reduces Risperidone-Induced Hyperprolactinemia

Abstract Many schizophrenic patients treated with typical or atypical antipsychotics (AP) such as risperidone show significant clinical alterations as changes in sexual activity, menstrual cycle, amenorrhea, galattorrea and cardiovascular disorders because of AP-induced hyperprolactinemia. In the present paper we report two clinical cases showing, after switching with aripiprazole, a PRL normalization and a marked improvement of clinical events related to risperidone-induced hyperprolactinemia

Investigating the Role of a P(VDF−TrFE) Ferroelectric Separator in Li‐Metal Pouch Cells using Electrochemical Impedance Spectroscopy

This study explores the efficacy of employing P(VDF−TrFE), a ferroelectric copolymer, to mitigate the formation of dead lithium in Li-metal anodes when paired with carbonate electrolytes. Employing non-solvent induced phase separation (NIPS), self-standing membranes and coatings on polypropylene (PP) separators were prepared, both demonstrating a homogenous cellular pore structure and excellent ionic conductivity. Rigorous evaluation in pouch cell formats, featuring a thin Li-metal anode (50 μm), a high-loading NMC532 cathode (3 mAhcm−2), and a carbonate electrolyte, reveals the superior performance of cells with P(VDF−TrFE)-coated PP separators. Notably, these cells exhibit slower and more consistent capacity fading, as well as the weakest increase in impedance, as evidenced by Electrochemical Impedance Spectroscopy (EIS) investigations. This work underscores the promising role of P(VDF−TrFE) as a key material for addressing challenges associated with dead lithium, offering valuable insights for advancing Li-metal battery technologies in practical applications

Silicon heterojunction solar cells and methods of manufacture

The present invention relates to a solar cell comprising a heterojunction photoelectric device comprising, a front electrode layer, a back electrode layer comprising a metallic contact layer (300), a light-absorbing silicon layer (1 ) arranged between said front electrode and said back electrode layers and a doped silicon-based layer (6) arranged between said light-absorbing silicon layer (1 ) and said back electrode layer, characterized in that said heterojunction photoelectric device further comprises a wide band gap material layer (10) having an electronic band gap greater than 1.4eV, said wide band gap material layer being applied on a surface of the light- absorbing silicon layer (1 ) between said light-absorbing silicon layer and said doped silicon-based layer (6). The present heterojunction layer or stack of layers is compatible with thermal annealing and firing processes at T above 600 °C

Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells

This work presents a systematic analysis of the transport mechanism and surface passivation of tunneling oxide (SiO2)/p-type poly-silicon (poly-Si(p)) junctions applied to p-type crystalline silicon (c-Si) solar cells by means of TCAD numerical simulations.We report on the impact of the buried doped region (BDR) in the c-Si wafer on the transport and passivation of SiO2/poly-Si(p) junctions. We show that a BDR is not necessary for carrier selective contacts (CSCs) with a tunnel oxide thinner than 1.2 nm and for surface recombination velocity at SiO2/c-Si interface below 1.10(3) cm/s. Then, we explore alternative semiconductors to poly-Si for tunnel oxide passivating contacts. We rind that 3C-SiC(p) is a promising candidate thanks to its valence band offset with respect to silicon, driving the wafer surface into a condition of strong accumulation. We show that excellent SiO2/3C-SiC(p) junctions are obtained for doping density of the 3C-SiC(p) larger than 5.10(19) cm(-3) and for SiO2 thinner than < 1.2 nm.Finally, with the aim of deriving guidelines for material selection, we present an investigation on the influence of the electron affinity and bandgap of the semiconductor layer forming the passivating contact, demonstrating that conversion efficiency is maximized for built-in voltages between 0.4 and 2.6 eV

Case Reports: Aripripazole Reduces Risperidone-Induced Hyperprolactinemia

Abstract Many schizophrenic patients treated with typical or atypical antipsychotics (AP) such as risperidone show significant clinical alterations as changes in sexual activity, menstrual cycle, amenorrhea, galattorrea and cardiovascular disorders because of AP-induced hyperprolactinemia. In the present paper we report two clinical cases showing, after switching with aripiprazole, a PRL normalization and a marked improvement of clinical events related to risperidone-induced hyperprolactinemia

Carrier injection from amorphous silicon into crystalline silicon determined with photoluminescence

Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon. A method to quantify the efficiency of such carrier injection using the spectral response of photoluminescence has recently been demonstrated. As this is a contactless method, it can be applied to incomplete device structures. Here we, use this technique to measure partially processed heterojunction devices with different capping layers to quantify their impact on the carrier injection efficiency. Silicon nitride capping on amorphous silicon is shown to have minimum impact on the high carrier injection efficiency of the amorphous layer whereas phosphorus doped amorphous capping layers on the other hand were seen to have a strong effect on the carrier injection efficiency

Impact Impact of different capping layers on carrier injection efficiency between amorphous and crystalline silicon measured using photoluminescence

Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon. A method to quantify the efficiency of such carrier injection using the spectral response of photoluminescence has recently been demonstrated. This is a contactless method and it can be applied to incomplete device structures. Here we use this technique to measure partially processed hetero-junction devices with different capping layers to quantify their impact on the carrier injection efficiency. Silicon nitride capping on amorphous silicon is shown to have minimum impact on the high carrier injection efficiency of the amorphous layer but doped amorphous capping layer on the other hand were seen to have a strong effect on the carrier injection efficiency. A model was developed to understand the material properties of the amorphous layer. The reduction in carrier injection efficiency with doped amorphous silicon capping layers were attributed to the large defects in the doped layer