Semiconducting properties of Tm doped Yb-ZnO films by spray pyrolysis

In this work, we have investigated the structural, optical and electrical properties of rare earth co-doped zinc oxide thin films prepared by spray pyrolysis technique. X-ray diffraction has shown that the films are polycrystalline and textured with the c-axis of the wurtzite structure along the growth direction. Scanning electronic microscopy and transmission electronic microscopy were used to study the films composition and morphology. Photoluminescence measurements showed that all the films have a strong emission band at around 380 nm. Layers with electrical resistivity values as low as 5.7 × 10−2 Ω cm were obtained

Elaboration and Characterization of Sprayed Tb-Doped ZnO Thin Films

ZnO and Tb-doped ZnO (TZO) thin films were deposited on glass substrate at 350 °C by spray pyrolysis technique. Structural, optical and electrical properties of the films were investigated as a function of dopant concentration, which was varied between 0 and 5 at % of terbium. TZO films were polycrystalline and exhibit hexagonal quartzite crystal structure with a preferential orientation along 2 direction. The AFM measurements show that the roughness of the films increased with Tb doping. All the TZO films exhibit a transmittance between 70 and 80 % in the visible range. The TZO films were n-type degenerate semiconductor with a lowest electrical resistivity of about 6.0´10- 2 W.cm