Learner autonomy and blended learning in the language classroom

This contribution is based on a pilot study intended to examine the effect of increased learner autonomy through blended learning on student engagement, satisfaction and target language proficiency improvements in an intermediate Japanese language class. Data collected for this target study was limited largely to voluntary, anonymous student self-reporting and a comparison of statistical data gathered from anonymous, standardised course evaluation surveys. As a pilot study, the goal is not to reach definitive conclusions but rather to constitute a first step in identifying the ‘low hanging fruit’ that might be harvested by encouraging student autonomy within the confines of the various fiscal and institutional limitations inherent to the university environment. We seek to identify how, in a cost-effective and sustainable manner, elements of blended learning can be integrated into a course to facilitate greater learner autonomy and to provide learners with a more student-centred and communicative language learning environment

“Design for EMI Suppression” During Reverse Recovery by 600V Lateral SOI PiN Diode with Traps

PiN diode design for oscillation-induced EMI suppression is proposed with novel structure. The proposed diode is lateral structure with traps using SOI substrate. Conventional PiN diode with vertical structure generates waveform oscillation and the oscillation lower power electronics system reliability. The design of proposed lateral structure with traps will contributes the performance improvement of all of bipolar power devices including IGBT.2014 International Conference on Solid State Devices and Materials, September 8, 2014, Tsukuba International Congress Center, Ibaraki, Japa

Ultrafast Lateral 600 V Silicon SOI PiN Diode with Geometric Traps for Preventing Waveform Oscillation

An ultrafast lateral silicon PiN diode with traps is proposed using a silicon-on-insulator (SOI) substrate with traps. The proposed diode successfully suppresses waveform oscillation because the trapped hole suppresses electric field penetration and prevents the oscillation trigger known as “dynamic punch-through.” Because of the short current path caused by the oscillation prevention, the reverse recovery speed was higher and the reverse recovery loss was strongly reduced. The proposed trap structure and design method would contribute to performance improvement of all power semiconductor devices including IGBTs and power MOSFETs

Ultra-fast Lateral 600 V Silicon PiN Diode Superior to SiC-SBD

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Jun 15-19, 2014, Hilton Waikoloa Village, Hawaii, USAUltra-fast silicon PiN diode is proposed by lateral structure with traps using silicon on insulator (SOI) substrate as shown in Fig. 1. The proposed lateral SOI silicon PiN diode achieved ultra-fast reverse recovery without waveform oscillation successfully. The proposed lateral SOI structure with traps will contributes to performance improvement of all of bipolar power devices including IGBT