Russia among the Countries of the Baltic Region

The Baltic region incorporates interactions of eight EU countries and the Russian Federation. It is composed of Sweden, Denmark, Finland, Lithuania, Latvia, and Estonia, as well as the territories of Russia, Germany and Poland located on the Baltic coast. Subjects of the Russian Federation located in the Baltic region account for 16% of the territory, 20% of the population, and 15.5% of GDP. An even bigger role is of Russia at the national level among the countries of the Baltic region. It accounts for 91% of the territory, 50% of the population, 38% of GDP and 14% of foreign trade turnover of nine countries combined. New spatial forms of cooperation are being formed with Russian participation – Euroregions, cross-border clusters. International cooperation increases the global competitiveness of each of the participating countries. The development gap has decreased between more and less wealthy countries. However, in the past few years, the relationship between the EU and Russia has deteriorated. In 2014 – 2015 Russia's trade with the countries of the region decreased more than with other EU countries and the world. The mutual and social ties decreased. This is not conducive to socio-economic development of both Russia and the EU, and it is in the interest of both parties to abandon the growing confrontation. Keywords: international regionalization, Baltic region, Baltic countries, EU, Russia JEL Classifications: F15, F36, F42, F5

Magnetic Dirac semimetal state of (Mn,Ge)Bi2_2Te4_4

For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dependent magnetic properties, composition-independent pairwise exchange interactions along with an easy magnetization axis. The bulk band gap gradually decreases to zero for $x$ from 0 to 0.4, before reopening for $x>0.6$, evidencing topological phase transitions (TPTs) between topologically nontrivial phases and the semimetal state. The TPTs are driven purely by the variation of orbital contributions. By tracing the x-dependent $6p$ contribution to the states near the fundamental gap, the effective spin-orbit coupling variation is extracted. As $x$ varies, the maximum of this contribution switches from the valence to the conduction band, thereby driving two TPTs. The gapless state observed at $x=0.42$ closely resembles a Dirac semimetal above the Neel temperature and shows a magnetic gap below, which is clearly visible in raw photoemission data. The observed behavior of the Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$ system thereby demonstrates an ability to precisely control topological and magnetic properties of TIs

Geography of Electoral Volatility in the Warmia and Mazury Voivodeship of Poland

The authors describe the impact of administrative reforms on the electoral volatility in the Warmia and Mazury voivodeship of Poland. The administrative reforms resulted in the formation of a new territorial organization of power. Using three large administrative units of Poland as an example, the authors analyse the experience of the formation of a geographic region by merging several politically diverse territories. The merger took place in a changing political environment. It inevitably affected the strategy and tactics of the development of local self-governance. The formation of the region has been going on in such a manner that differences in the electoral preferences and political behaviour of the urban population (the regional metropolis) and the periphery remain unchanged. Having performed the index analysis and a comparative analysis of the electoral data, the authors conclude that the consistency of administrative decisions on the formation of the region and the electoral performance have been weakening over time. During the initial phase, the electoral volatility was mainly due to the sluggishness and inertia of the previous territorial organization. After the phase of stabilization, the electoral volatility indices in different geographical areas changed due to a combination of social and political factors. The authors show that the ‘looseness’ of the Polish party system affect the electoral volatility in the region more than institutional decisions of the administrative reforms

География электоральной волатильности в Варминьско-Мазурском воеводстве Польши

The authors describe the impact of administrative reforms on the electoral volatility in the Warmia and Mazury voivodeship of Poland. The administrative reforms resulted in the formation of a new territorial organization of power. Using three large administrative units of Poland as an example, the authors analyse the experience of the formation of a geographic region by merging several politically diverse territories. The merger took place in a changing political environment. It inevitably affected the strategy and tactics of the development of local self-governance. The formation of the region has been going on in such a manner that differences in the electoral preferences and political behaviour of the urban population (the regional metropolis) and the periphery remain unchanged. Having performed the index analysis and a comparative analysis of the electoral data, the authors conclude that the consistency of administrative decisions on the formation of the region and the electoral performance have been weakening over time. During the initial phase, the electoral volatility was mainly due to the sluggishness and inertia of the previous territorial organization. After the phase of stabilization, the electoral volatility indices in different geographical areas changed due to a combination of social and political factors. The authors show that the ‘looseness’ of the Polish party system affect the electoral volatility in the region more than institutional decisions of the administrative reforms

Phosphazene-Containing Epoxy Resins Based on Bisphenol F with Enhanced Heat Resistance and Mechanical Properties: Synthesis and Properties

Organophosphazenes are of interest due to the combination of increased mechanical and thermal properties of polymer materials obtained with their use, however, they are characterized by a complex multi-stage synthesis. Moreover, the high viscosity of phosphazene-containing epoxy resins (PhER) makes their processing difficult. To simplify the synthesis of PhER, a one-step method was developed, and bisphenol F was chosen, which also provided a decrease in viscosity. In the current study, PhER were formed by a one-stage interaction of hexachlorocyclotriphosphazene (HCP) with bisphenol F isomers and epichlorohydrin in the presence of alkali, which was a mixture of epoxycyclophosphazenes (ECPh) with a functionality from 1 to 4 according to the results of MALDI-TOF analysis. Conventional epoxy resins based on bisphenol F, also formed during the process, showed high mechanical properties and glass transition temperature, and the reactivity of the obtained resins is similar to the base epoxy resins based on bisphenols A and F. Cured PhER had higher or the same mechanical properties compared to base epoxy resins based on bisphenol A and F, and a glass transition temperature comparable to base epoxy resins based on bisphenol F: glass transition temperature (Tg) up to 174.5 °C, tensile strength up to 74.5 MPa, tensile modulus up to 2050 MPa, tensile elongation at break up to 6.22%, flexural strength up to 146.6 MPa, flexural modulus up to 3630 MPa, flexural elongation at break up to 9.15%, and Izod impact strength up to 4.01 kJ/m2. Analysis of the composition of the obtained PhER was carried out by 1H and 31P NMR spectroscopy, MALDI-TOF mass spectrometry, X-ray fluorescence elemental analysis, and contained up to 3.9% phosphorus and from 1.3% to 4.2% chlorine. The temperature profile of the viscosity of the resulting epoxy resins was determined, and the viscosity at 25 °C ranged from 20,000 to 450,000 Pa·s, depending on the ratio of reagents. The resins studied in this work can be cured with conventional curing agents and, with a low content of the phosphazene fraction, can act as modifiers for traditional epoxy resins, being compatible with them, to increase impact strength and elasticity while maintaining the rest of the main mechanical and processing properties, and can be used as a resin component for composite materials, adhesives, and paints

Asymmetric Interfaces in Epitaxial Off-Stoichiometric Fe3+xSi1−x/Ge/Fe3+xSi1−x Hybrid Structures: Effect on Magnetic and Electric Transport Properties

Three-layer iron-rich Fe3+xSi1−x/Ge/Fe3+xSi1−x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1−x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1−x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1−x. The average lattice distortion and residual stress of the upper Fe3+xSi1−x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of −0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1−x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1−x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1−x, which implies the epitaxial orientation relationship of Fe3+xSi1−x (111)[0−11] || Ge(111)[1−10] || Fe3+xSi1−x (111)[0−11] || Si(111)[1−10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms

Growth Process, Structure and Electronic Properties of Cr₂GeC and Cr_2-xMn_xGeC Thin Films Prepared by Magnetron Sputtering

The growth and phase formation features, along with the influence of structure and morphology on the electronic, optical, and transport properties of Cr2GeC and Cr2-xMnxGeC MAX phase thin films synthesized by magnetron sputtering technique, were studied. It was found that the Cr:Ge:C atomic ratios most likely play the main role in the formation of a thin film of the MAX phase. A slight excess of carbon and manganese doping significantly improved the phase composition of the films. Cr2GeC films with a thicknesses exceeding 40 nm consisted of crystallites with well-developed facets, exhibiting metallic optical and transport properties. The hopping conduction observed in the Cr2-xMnxGeC film could be attributed to the columnar form of crystallites. Calculations based on a two-band model indicated high carrier concentrations N, P and mobility μ in the best-synthesized Cr2GeC film, suggesting transport properties close to single crystal material. The findings of this study can be utilized to enhance the growth technology of MAX phase thin films