Modification of Nanocrystalline Porous Cu2-xSe Films during Argon Plasma Treatment

Cu2-xSe films were deposited on Corning glass substrates by radio frequency (RF) magnetron sputtering and annealed at 300 °C for 20 min under N2 gas ambient. The films had a thickness of 850–870 nm and a chemical composition of Cu1.75Se. The initial structure of the films was nanocrystalline with a complex architecture and pores. The investigated films were plasma treated with RF (13.56 MHz) high-density low-pressure inductively coupled argon plasma. The plasma treatment was conducted at average ion energies of 25 and 200 eV for durations of 30, 60, and 90 s. Notably, changes are evident in the surface morphology, and the chemical composition of the films changed from x = 0.25 to x = 0.10 to x = 0.00, respectively, after plasma treatment at average ion energies of 25 and 200 eV, respectively

Modification of Nanocrystalline Porous Cu_2-xSe Films during Argon Plasma Treatment

Cu2-xSe films were deposited on Corning glass substrates by radio frequency (RF) magnetron sputtering and annealed at 300 °C for 20 min under N2 gas ambient. The films had a thickness of 850–870 nm and a chemical composition of Cu1.75Se. The initial structure of the films was nanocrystalline with a complex architecture and pores. The investigated films were plasma treated with RF (13.56 MHz) high-density low-pressure inductively coupled argon plasma. The plasma treatment was conducted at average ion energies of 25 and 200 eV for durations of 30, 60, and 90 s. Notably, changes are evident in the surface morphology, and the chemical composition of the films changed from x = 0.25 to x = 0.10 to x = 0.00, respectively, after plasma treatment at average ion energies of 25 and 200 eV, respectively

Variation of Surface Nanostructures on (100) PbS Single Crystals during Argon Plasma Treatment

The nanostructuring of the (100) PbS single crystal surface was studied under varying argon plasma treatment conditions. The initial PbS single crystals were grown by high-pressure vertical zone melting, cut into wafer samples, and polished. Subsequently, the PbS single crystals were treated with inductively coupled argon plasma under varying treatment parameters such as ion energy and sputtering time. Plasma treatment with ions at a minimum energy of 25 eV resulted in the formation of nanotips with heights of 30–50 nm. When the ion energy was increased to 75–200 eV, two types of structures formed on the surface: high submicron cones and arrays of nanostructures with various shapes. In particular, the 120 s plasma treatment formed specific cruciform nanostructures with lateral orthogonal elements oriented in four directions. In contrast, plasma treatment with an ion energy of 75 eV for 180 s led to the formation of submicron quasi-spherical lead structures with diameters of 250–600 nm. The nanostructuring mechanisms included a surface micromasking mechanism with lead formation and the vapor–liquid–solid mechanism, with liquid lead droplets acting as self-forming micromasks and growth catalysts depending on the plasma treatment conditions (sputtering time and rate)

Variation of Surface Nanostructures on (100) PbS Single Crystals during Argon Plasma Treatment

The nanostructuring of the (100) PbS single crystal surface was studied under varying argon plasma treatment conditions. The initial PbS single crystals were grown by high-pressure vertical zone melting, cut into wafer samples, and polished. Subsequently, the PbS single crystals were treated with inductively coupled argon plasma under varying treatment parameters such as ion energy and sputtering time. Plasma treatment with ions at a minimum energy of 25 eV resulted in the formation of nanotips with heights of 30–50 nm. When the ion energy was increased to 75–200 eV, two types of structures formed on the surface: high submicron cones and arrays of nanostructures with various shapes. In particular, the 120 s plasma treatment formed specific cruciform nanostructures with lateral orthogonal elements oriented in four <100> directions. In contrast, plasma treatment with an ion energy of 75 eV for 180 s led to the formation of submicron quasi-spherical lead structures with diameters of 250–600 nm. The nanostructuring mechanisms included a surface micromasking mechanism with lead formation and the vapor–liquid–solid mechanism, with liquid lead droplets acting as self-forming micromasks and growth catalysts depending on the plasma treatment conditions (sputtering time and rate)