15,420 research outputs found

    Josephson Vortex States in Intermediate Fields

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    Motivated by recent resistance data in high TcT_c superconductors in fields {\it parallel} to the CuO layers, we address two issues on the Josephson-vortex phase diagram, the appearances of structural transitions on the observed first order transition (FOT) curve in intermediate fields and of a lower critical point of the FOT line. It is found that some rotated pinned solids are more stable than the ordinary rhombic pinned solids with vacant interlayer spacings and that, due to the vertical portion in higher fields of the FOT line, the FOT tends to be destroyed by creating a lower critical point.Comment: 12 pages, 3 figures. To appear in J.Phys.Soc.Jpn. 71, No.2 (February, 2002

    Theoretical Description of Resistive Behavior near a Quantum Vortex-Glass Transition

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    Resistive behaviors at nonzero temperatures (T > 0) reflecting a quantum vortex-glass (VG) transition (the so-called field-tuned superconductor-insulator transition at T=0) are studied based on a quantum Ginzburg-Landau (GL) action for a s-wave pairing case containing microscopic details. The ordinary dissipative dynamics of the pair-field is assumed on the basis of a consistency between the fluctuation conductance terms excluded from GL approach and an observed negative magnetoresistance. It is shown that the VG contribution, G_{vg}(B=B_{vg}, T \to 0),to 2D fluctuation conductance at the VG transition field B_{vg} depends on the strength of a repulsive-interaction between electrons and takes a universal value only in the ordinary dirty limit neglecting the electron-repulsion. Available resistivity data near B_{vg} are discussed based on our results, and extensions to the cases of a d-wave pairing and of 3D systems are briefly commented on.Comment: Explanation of data in strongly disordered case, as well as Fig.2 and 3, was renewed, and comments on recent publications were added. To appear in J.Phys.Soc. Jp

    Agterberg, Zheng, and Mukherjee Reply

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    Reply to Ikeda (arXiv:0712.3341).Comment: To appear in Phys. Rev. Let

    An Alternative Topological Field Theory of Generalized Complex Geometry

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    We propose a new topological field theory on generalized complex geometry in two dimension using AKSZ formulation. Zucchini's model is AA model in the case that the generalized complex structuredepends on only a symplectic structure. Our new model is BB model in the case that the generalized complex structure depends on only a complex structure.Comment: 29 pages, typos and references correcte

    Evidence for realignment of the charge density wave state in ErTe3_3 and TmTe3_3 under uniaxial stress via elastocaloric and elastoresistivity measurements

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    We report the evolution of a charge density wave (CDW) state in the quasi-2D rare-earth tritellurides (RRTe3_3 for RR=Er,Tm) as a function of in-plane uniaxial stress. Measurements of the elastocaloric effect, resistivity, and elastoresistivity allow us to demonstrate the importance of in-plane antisymmetric strain on the CDW and to establish a phase diagram. We show that modest tensile stress parallel to the in-plane aa-axis can reversibly switch the direction of the ordering wavevector between the two in-plane directions. This work establishes RRTe3_3 as a promising model system for the study of strain-CDW interactions in a quasi-2D square lattice.Comment: 18 pages, 12 figure

    Microscopic Study of Quantum Vortex-Glass Transition Field in Two-Dimensional Superconductors

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    The position of a field-tuned superconductor-insulator quantum transition occuring in disordered thin films is examined within the mean field approximation. Our calculation shows that the microscopic disorder-induced reduction of the quantum transition point found experimentally cannot be explained if the interplay between the disorder and an electron-electron repulsive interaction is ignored. This work is presented as a microscopic basis of an explanation (cond-mat/0105122) of resistive phenomena near the transition field.Comment: 16 pages, 5 figures. To appear in J.Phys.Soc.Jp

    Theoretical Description of Nearly Discontinuous Transition in Superconductors with Paramagnetic Depairing

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    Based on a theoretical argument and Monte Carlo simulations of a Ginzburg-Landau model derived microscopically, it is argued that, in type-II superconductors where {\it both} the paramagnetic {\it and} orbital depairings are important, a strong first-order transition (FOT) at Hc2H_{c2} expected in the mean field (MF) approximation never occurs in real systems and changes due to the fluctuation into a crossover. The present result explains why a {\it nearly} discontinuous crossover at Hc2H_{c2} with {\it no} intrinsic hysteresis is observed only in a clean superconducting material with a singlet pairing and a high condensation energy such as CeCoIn5_5.Comment: Publication version. See cond-mat/0306060 regarding a corresponding long pape

    Uniaxial-Pressure induced Ferromagnetism of Enhanced Paramagnetic Sr3Ru2O7

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    We report a uniaxial pressure-dependence of magnetism in layered perovskite strontium ruthenate Sr3Ru2O7. By applying a relatively small uniaxial pressure, greater than 0.1 GPa normal to the RuO2 layer, ferromagnetic ordering manifests below 80 K from the enhanced-paramagnet. Magnetization at 1 kOe and 2 K becomes 100 times larger than that under ambient condition. Uniaxial pressure dependence of Curie temperature T_C suggests the first order magnetic transition. Origin of this uniaxial-pressure induced ferromagnetism is discussed in terms of the rotation of RuO6 octahedra within the RuO2 plane.Comment: 8 pages, 3 figures. to be published in Journal of the Physical Society of Japan, vol.73, No.5 (2004

    CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions

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    Thermal stability factor (delta) of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, delta is virtually independent of the junction sizes of 48-81 nm in diameter. The values of delta increase linearly with increasing the recording layer thickness. The slope of the linear fit is explained well by a model based on nucleation type magnetization reversal.Comment: 12 pages, 5 figure
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