25,992 research outputs found
Three Dimensional Topological Field Theory induced from Generalized Complex Structure
We construct a three-dimensional topological sigma model which is induced
from a generalized complex structure on a target generalized complex manifold.
This model is constructed from maps from a three-dimensional manifold to an
arbitrary generalized complex manifold . The theory is invariant under the
diffeomorphism on the world volume and the -transformation on the
generalized complex structure. Moreover the model is manifestly invariant under
the mirror symmetry. We derive from this model the Zucchini's two dimensional
topological sigma model with a generalized complex structure as a boundary
action on . As a special case, we obtain three dimensional
realization of a WZ-Poisson manifold.Comment: 18 page
Effect of in-plane line defects on field-tuned superconductor-insulator transition behavior in homogeneous thin film
Field-tuned superconductor-insulator transition (FSIT) behavior in 2D
isotropic and homogeneous thin films is usually accompanied by a nonvanishing
critical resistance at low . It is shown that, in a 2D film including line
defects paralle to each other but with random positions perpendicular to them,
the (apparent) critical resistance in low limit vanishes, as in the 1D
quantum superconducting (SC) transition, under a current parallel to the line
defects. This 1D-like critical resistive behavior is more clearly seen in
systems with weaker point disorder and may be useful in clarifying whether the
true origin of FSIT behavior in the parent superconductor is the glass
fluctuation or the quantum SC fluctuation. As a by-product of the present
calculation, it is also pointed out that, in 2D films with line-like defects
with a long but {\it finite} correlation length parallel to the lines, a
quantum metallic behavior intervening the insulating and SC ones appears in the
resistivity curves.Comment: 16 pages, 14 figure
Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer
We investigated the relationship between tunnel magnetoresistance (TMR) ratio
and the crystallization of CoFeB layers through annealing in magnetic tunnel
junctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnet
pinned layers with varying Ru spacer thickness (tRu). The TMR ratio increased
with increasing annealing temperature (Ta) and tRu, reaching 361% at Ta = 425C,
whereas the TMR ratio of the MTJs with pinned layers without Ru spacers
decreased at Ta over 325C. Ruthenium spacers play an important role in forming
an (001)-oriented bcc CoFeB pinned layer, resulting in a high TMR ratio through
annealing at high temperatures.Comment: 10 pages, 5 figures, submitted to Applied Physics Letter
Theoretical Description of Resistive Behavior near a Quantum Vortex-Glass Transition
Resistive behaviors at nonzero temperatures (T > 0) reflecting a quantum
vortex-glass (VG) transition (the so-called field-tuned
superconductor-insulator transition at T=0) are studied based on a quantum
Ginzburg-Landau (GL) action for a s-wave pairing case containing microscopic
details. The ordinary dissipative dynamics of the pair-field is assumed on the
basis of a consistency between the fluctuation conductance terms excluded from
GL approach and an observed negative magnetoresistance. It is shown that the VG
contribution, G_{vg}(B=B_{vg}, T \to 0),to 2D fluctuation conductance at the VG
transition field B_{vg} depends on the strength of a repulsive-interaction
between electrons and takes a universal value only in the ordinary dirty limit
neglecting the electron-repulsion. Available resistivity data near B_{vg} are
discussed based on our results, and extensions to the cases of a d-wave pairing
and of 3D systems are briefly commented on.Comment: Explanation of data in strongly disordered case, as well as Fig.2 and
3, was renewed, and comments on recent publications were added. To appear in
J.Phys.Soc. Jp
QP-Structures of Degree 3 and 4D Topological Field Theory
A A BV algebra and a QP-structure of degree 3 is formulated. A QP-structure
of degree 3 gives rise to Lie algebroids up to homotopy and its algebraic and
geometric structure is analyzed. A new algebroid is constructed, which derives
a new topological field theory in 4 dimensions by the AKSZ construction.Comment: 17 pages, Some errors and typos have been correcte
Josephson Vortex States in Intermediate Fields
Motivated by recent resistance data in high superconductors in fields
{\it parallel} to the CuO layers, we address two issues on the Josephson-vortex
phase diagram, the appearances of structural transitions on the observed first
order transition (FOT) curve in intermediate fields and of a lower critical
point of the FOT line. It is found that some rotated pinned solids are more
stable than the ordinary rhombic pinned solids with vacant interlayer spacings
and that, due to the vertical portion in higher fields of the FOT line, the FOT
tends to be destroyed by creating a lower critical point.Comment: 12 pages, 3 figures. To appear in J.Phys.Soc.Jpn. 71, No.2 (February,
2002
AKSZ-BV Formalism and Courant Algebroid-induced Topological Field Theories
We give a detailed exposition of the Alexandrov-Kontsevich-Schwarz-
Zaboronsky superfield formalism using the language of graded manifolds. As a
main illustarting example, to every Courant algebroid structure we associate
canonically a three-dimensional topological sigma-model. Using the AKSZ
formalism, we construct the Batalin-Vilkovisky master action for the model.Comment: 13 pages, based on lectures at Rencontres mathematiques de Glanon
200
An Alternative Topological Field Theory of Generalized Complex Geometry
We propose a new topological field theory on generalized complex geometry in
two dimension using AKSZ formulation. Zucchini's model is model in the case
that the generalized complex structuredepends on only a symplectic structure.
Our new model is model in the case that the generalized complex structure
depends on only a complex structure.Comment: 29 pages, typos and references correcte
- âŠ