10 research outputs found
Dynamic avalanche breakdown of a p-n junction: deterministic triggering of a plane streamer front
We discuss the dynamic impact ionization breakdown of high voltage p-n
junction which occurs when the electric field is increased above the threshold
of avalanche impact ionization on a time scale smaller than the inverse
thermogeneration rate. The avalanche-to-streamer transition characterized by
generation of dense electron-hole plasma capable to screen the applied external
electric field occurs in such regimes. We argue that the experimentally
observed deterministic triggering of the plane streamer front at the electric
field strength above the threshold of avalanche impact ionization but yet below
the threshold of band-to-band tunneling is generally caused by field-enhanced
ionization of deep-level centers. We suggest that the process-induced sulfur
centers and native defects such as EL2, HB2, HB5 centers initiate the front in
Si and GaAs structures, respectively. In deep-level free structures the plane
streamer front is triggered by Zener band-to-band tunneling.Comment: 4 pages, 2 figure
Impact ionization fronts in Si diodes: Numerical evidence of superfast propagation due to nonlocalized preionization
We present numerical evidence of a novel propagation mode for superfast
impact ionization fronts in high-voltage Si -- structures. In
nonlinear dynamics terms, this mode corresponds to a pulled front propagating
into an unstable state in the regime of nonlocalized initial conditions. Before
the front starts to travel, field-ehanced emission of electrons from deep-level
impurities preionizes initially depleted base creating spatially nonuniform
free carriers profile. Impact ionization takes place in the whole high-field
region. We find two ionizing fronts that propagate in opposite directions with
velocities up to 10 times higher than the saturated drift velocity.Comment: 3 pages, 4 figure
Theory of superfast fronts of impact ionization in semiconductor structures
We present an analytical theory for impact ionization fronts in reversely
biased p^{+}-n-n^{+} structures. The front propagates into a depleted n base
with a velocity that exceeds the saturated drift velocity. The front passage
generates a dense electron-hole plasma and in this way switches the structure
from low to high conductivity. For a planar front we determine the
concentration of the generated plasma, the maximum electric field, the front
width and the voltage over the n base as functions of front velocity and doping
of the n base. Theory takes into account that drift velocities and impact
ionization coefficients differ between electrons and holes, and it makes
quantitative predictions for any semiconductor material possible.Comment: 18 pagers, 10 figure
Tunneling-assisted impact ionization fronts in semiconductors
We propose a novel type of ionization front in layered semiconductor
structures. The propagation is due to the interplay of band-to-band tunneling
and impact ionization. Our numerical simulations show that the front can be
triggered when an extremely sharp voltage ramp () is
applied in reverse direction to a Si structure that is connected in
series with an external load. The triggering occurs after a delay of 0.7 to 0.8
ns. The maximal electrical field at the front edge exceeds .
The front velocity is 40 times faster than the saturated drift velocity
. The front passes through the base with a thickness of
within approximately 30 ps, filling it with dense electron-hole plasma. This
passage is accompanied by a voltage drop from 8 kV to dozens of volts. In this
way a voltage pulse with a ramp up to can be applied to the
load. The possibility to form a kilovolt pulse with such a voltage rise rate
sets new frontiers in pulse power electronics.Comment: 12 pages, 6 figure