15 research outputs found
Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects
We investigated Capacitance-Voltage (C-V) characteristics of the Depletion
Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent
method incorporating Quantum Mechanical (QM) effects. Though the experimental
results of C-V for enhancement type device is available in recent literature, a
complete characterization of electrostatic property of depletion type Buried
Channel Quantum Well FET (QWFET) structure is yet to be done. C-V
characteristics of the device is studied with the variation of three important
process parameters: Indium (In) composition, gate dielectric and oxide
thickness. We observed that inversion capacitance and ballistic current tend to
increase with the increase in Indium (In) content in InGaAs barrier layer.Comment: 5 pages, ICEDSA conference 201
Self Consistent Simulation of C-V Characterization and Ballistic Performance of Double Gate SOI Flexible-FET Incorporating QM Effects
Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics
of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm
dimensions are obtained by self-consistent method using coupled Schrodinger-
Poisson solver taking into account the quantum mechanical effects. Although,
ATLAS simulations to determine current and other short channel effects in this
device have been demonstrated in recent literature, C-V & Ballistic I-V
characterizations by using self-consistent method are yet to be reported. C-V
characteristic of this device is investigated here with the variation of bottom
gate voltage. The depletion to accumulation transition point (i.e. Threshold
voltage) of the C-V curve should shift in the positive direction when the
bottom gate is negatively biased and our simulation results validate this
phenomenon. Ballistic performance of this device has also been studied with the
variation of top gate voltage.Comment: 4 pages, ICEDSA 2012 conferenc
In_xGa_{1-x}Sb MOSFET: Performance Analysis by Self Consistent CV Characterization and Direct Tunneling Gate Leakage Current
In this paper, Capacitance-Voltage (C-V) characteristics and direct tunneling
(DT) gate leakage current of antimonide based surface channel MOSFET were
investigated. Self-consistent method was applied by solving coupled
Schr\"odinger-Poisson equation taking wave function penetration and strain
effects into account. Experimental I-V and gate leakage characteristic for
p-channel InxGa1-xSb MOSFETs are available in recent literature. However, a
self- consistent simulation of C-V characterization and direct tunneling gate
leakage current is yet to be done for both n- channel and p-channel InxGa1-xSb
surface channel MOSFETs. We studied the variation of C-V characteristics and
gate leakage current with some important process parameters like oxide
thickness, channel composition, channel thickness and temperature for n-channel
MOSFET in this work. Device performance should improve as compressive strain
increases in channel. Our simulation results validate this phenomenon as
ballistic current increases and gate leakage current decreases with the
increase in compressive strain. We also compared the device performance by
replacing InxGa1-xSb with InxGa1-xAs in channel of the structure. Simulation
results show that performance is much better with this replacement.Comment: 7 pages, EIT 2012 IUPUI conferenc
A Physically Based Analytical Modeling of Threshold Voltage Control for Fully-Depleted SOI Double Gate NMOS-PMOS Flexible-FET
In this work, we propose an explicit analytical equation to show the
variation of top gate threshold voltage with respect to the JFET bottom gate
voltage for a Flexible Threshold Voltage Field Effect Transistor (Flexible-FET)
by solving 2-D Poisson's equation with appropriate boundary conditions,
incorporating Young's parabolic approximation. The proposed model illustrates
excellent match with the experimental results for both n-channel and p-channel
180nm Flexible-FETs. Threshold voltage variation with several important device
parameters (oxide and silicon channel thickness, doping concentration) is
observed which yields qualitative matching with results obtained from SILVACO
simulations.Comment: 4 pages, EIT 2012-IUPUI conferenc
Balanced Transmissions Based Trajectories of Mobile Sink in Homogeneous Wireless Sensor Networks
Mobile Sink (MS) based routing strategies have been widely investigated to prolong the lifetime of Wireless Sensor Networks (WSNs). In this paper, we propose two schemes for data gathering in WSNs: (i) MS moves on random paths in the network (RMS) and (ii) the trajectory of MS is defined (DMS). In both the schemes, the network field is logically divided into small squares. The center point of each partitioned area is the sojourn location of the MS. We present three linear programming based models: (i) to maximize network lifetime, (ii) to minimize path loss, and (iii) to minimize end to end delay. Moreover, a geometric model is proposed to avoid redundancy while collecting information from the network nodes. Simulation results show that our proposed schemes perform better than the selected existing schemes in terms of the selected performance metrics
Code Generation From Uml Statecharts
The Unified Modeling Language (UML) statechart diagram is a powerful tool for specifying the dynamic behavior of reactive objects. Generating code from statechart diagrams is a challenging task due to its dynamic nature and because many of the statechart concepts are not supported by the object oriented programming languages. Most of the approaches for implementing UML statecharts diagram either suffer from maintenance problems or implement only a subset of UML statecharts
Cooperative Opportunistic Pressure Based Routing for Underwater Wireless Sensor Networks
In this paper, three opportunistic pressure based routing techniques for underwater wireless sensor networks (UWSNs) are proposed. The first one is the cooperative opportunistic pressure based routing protocol (Co-Hydrocast), second technique is the improved Hydrocast (improved-Hydrocast), and third one is the cooperative improved Hydrocast (Co-improved Hydrocast). In order to minimize lengthy routing paths between the source and the destination and to avoid void holes at the sparse networks, sensor nodes are deployed at different strategic locations. The deployment of sensor nodes at strategic locations assure the maximum monitoring of the network field. To conserve the energy consumption and minimize the number of hops, greedy algorithm is used to transmit data packets from the source to the destination. Moreover, the opportunistic routing is also exploited to avoid void regions by making backward transmissions to find reliable path towards the destination in the network. The relay cooperation mechanism is used for reliable data packet delivery, when signal to noise ratio (SNR) of the received signal is not within the predefined threshold then the maximal ratio combining (MRC) is used as a diversity technique to improve the SNR of the received signals at the destination. Extensive simulations validate that our schemes perform better in terms of packet delivery ratio and energy consumption than the existing technique; Hydrocast
Orchestrating an Effective Formulation to Investigate the Impact of EMSs (Energy Management Systems) for Residential Units Prior to Installation
Demand Response (DR) programs under the umbrella of Demand Side Management (DSM) tend to involve end users in optimizing their Power Consumption (PC) patterns and offer financial incentives to shift the load at “low-priced” hours. However, users have their own preferences of anticipating the amount of consumed electricity. While installing an Energy Management System (EMS), the user must be assured that this investment gives optimum comfort of bill savings, as well as appliance utility considering Time of Use (ToU). Moreover, there is a difference between desired load distribution and optimally-scheduled load across a 24-h time frame for lowering electricity bills. This difference in load usage timings, if it is beyond the tolerance level of a user, increases frustration. The comfort level is a highly variable phenomenon. An EMS giving optimum comfort to one user may not be able to provide the same level of satisfaction to another who has different preferences regarding electricity bill savings or appliance utility. Under such a diversity of human behaviors, it is difficult to select an EMS for an individual user. In this work, a numeric performance metric,“User Comfort Level (UCL)”isformulatedonthebasisofuserpreferencesoncostsaving,toleranceindelayregardinguse of an appliance and return of investment. The proposed framework (UCL) allows the user to select an EMS optimally that suits his.her preferences well by anticipating electricity bill reduction, tolerable delay in ToU of the appliance and return on investment. Furthermore, an extended literature analysis is conducted demonstrating generic strategies of EMSs. Five major building blocks are discussed and a comparative analysis is presented on the basis of the proposed performance metric