8 research outputs found
Theory of Ferromagnetism in Diluted Magnetic Semiconductor Quantum Wells
We present a mean field theory of ferromagnetism in diluted magnetic
semiconductor quantum wells. When subband mixing due to exchange interactions
between quantum well free carriers and magnetic impurities is neglected,
analytic result can be obtained for the dependence of the critical temperature
and the spontaneous magnetization on the distribution of magnetic impurities
and the quantum well width. The validity of this approximate theory has been
tested by comparing its predictions with those from numerical self-consistent
field calculations. Interactions among free carriers, accounted for using the
local-spin-density approximation, substantially enhance the critical
temperature. We demonstrate that an external bias potential can tune the
critical temperature through a wide range.Comment: 4 pages, 3 figures, submitted to Phys. Rev.
Fermionic SK-models with Hubbard interaction: Magnetism and electronic structure
Models with range-free frustrated Ising spin- and Hubbard interaction are
treated exactly by means of the discrete time slicing method. Critical and
tricritical points, correlations, and the fermion propagator, are derived as a
function of temperature T, chemical potential \mu, Hubbard coupling U, and spin
glass energy J. The phase diagram is obtained. Replica symmetry breaking
(RSB)-effects are evaluated up to four-step order (4RSB). The use of exact
relations together with the 4RSB-solutions allow to model exact solutions by
interpolation. For T=0, our numerical results provide strong evidence that the
exact density of states in the spin glass pseudogap regime obeys \rho(E)=const
|E-E_F| for energies close to the Fermi level. Rapid convergence of \rho'(E_F)
under increasing order of RSB is observed. The leading term resembles the
Efros-Shklovskii Coulomb pseudogap of localized disordered fermionic systems in
2D. Beyond half filling we obtain a quadratic dependence of the fermion filling
factor on the chemical potential. We find a half filling transition between a
phase for U>\mu, where the Fermi level lies inside the Hubbard gap, into a
phase where \mu(>U) is located at the center of the upper spin glass pseudogap
(SG-gap). For \mu>U the Hubbard gap combines with the lower one of two SG-gaps
(phase I), while for \mu<U it joins the sole SG-gap of the half-filling regime
(phase II). We predict scaling behaviour at the continuous half filling
transition. Implications of the half-filling transition between the deeper
insulating phase II and phase I for delocalization due to hopping processes in
itinerant model extensions are discussed and metal-insulator transition
scenarios described.Comment: 29 pages, 26 Figures, 4 jpeg- and 3 gif-Fig-files include