Terahertz generation in ordered arrays of GaAs nanowires

THz generation under excitation by ultrashort optical pulses from ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz generation process is determined by the excitation of leaky modes for the light incident on the semiconductor nanocrystal and increases due to the resonant excitation of Mie modes. Furthermore, it is shown that the efficiency of the terahertz generation at optimum geometrical parameters of an array of semiconductor nanowires is greater than the corresponding value for bulk semiconductor p-InAs which is the most effective THz emitter