Fractional microwave-induced resistance oscillations

We develop a systematic theory of microwave-induced oscillations in magnetoresistivity of a 2D electron gas in the vicinity of fractional harmonics of the cyclotron resonance, observed in recent experiments. We show that in the limit of well-separated Landau levels the effect is dominated by the multiphoton inelastic mechanism. At moderate magnetic field, two single-photon mechanisms become important. One of them is due to resonant series of multiple single-photon transitions, while the other originates from microwave-induced sidebands in the density of states of disorder-broadened Landau levels.Comment: 3 pages, 2 figures; Proceedings of EP2DS17 to be published in Physica E; less technical version of arXiv:0707.099

The sentiment-analysis algorithm of social networks text resources based on ontology

In this paper the features of semantic and sentiment analysis of textual data of social networks are presented, and an original model and algorithm for sentiment analysis of textual fragments of social networks using fuzzy linguistic ontology are proposed. This approach involves the use of various subgraphs of fuzzy ontology when considering texts of various subject areas with regard to contexts. In addition, the algorithm involves the assessment of the sentiment scores of individual syntagmatic structures into which the analyzed text fragments are divided. It also presents the results of experiments comparing the efficiency of the developed algorithm with a group of existing approaches in analyzing text fragments on the example of data from the social network VKontakte

Theory of the oscillatory photoconductivity of a 2D electron gas

We develop a theory of magnetooscillations in the photoconductivity of a two-dimensional electron gas observed in recent experiments. The effect is governed by a change of the electron distribution function induced by the microwave radiation. We analyze a nonlinearity with respect to both the dc field and the microwave power, as well as the temperature dependence determined by the inelastic relaxation rate.Comment: 4 pages, 3 figure

Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices

We examine the radiation induced modification of the Hall effect in high mobility GaAs/AlGaAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small reduction in the slope of the Hall resistance curve with respect to the dark value, (b) a periodic reduction in the magnitude of the Hall resistance, $R_{xy}$, that correlates with an increase in the diagonal resistance, $R_{xx}$, and (c) a Hall resistance correction that disappears as the diagonal resistance vanishes.Comment: 4 pages text, 4 color figure

Layered ferromagnet-superconductor structures: the π\pi state and proximity effects

We investigate clean mutilayered structures of the SFS and SFSFS type, (where the S layer is intrinsically superconducting and the F layer is ferromagnetic) through numerical solution of the self-consistent Bogoliubov-de Gennes equations for these systems. We obtain results for the pair amplitude, the local density of states, and the local magnetic moment. We find that as a function of the thickness $d_F$ of the magnetic layers separating adjacent superconductors, the ground state energy varies periodically between two stable states. The first state is an ordinary "0-state", in which the order parameter has a phase difference of zero between consecutive S layers, and the second is a "$\pi$-state", where the sign alternates, corresponding to a phase difference of $\pi$ between adjacent S layers. This behavior can be understood from simple arguments. The density of states and the local magnetic moment reflect also this periodicity.Comment: 12 pages, 10 Figure

Phase separation in the two-dimensional electron liquid in MOSFETs

We show that the existence of an intermediate phase between the Fermi liquid and the Wigner crystal phases is a generic property of the two-dimensional pure electron liqd in MOSFET's at zero temperature. The physical reason for the existence of these phases is a partial separation of the uniform phases. We discuss properties of these phases and a possible explanation of experimental results on transport properties of low density electron gas in Si MOSFET's. We also argue that in certain range of parameters the partial phase separation corresponds to a supersolid phas e discussed in [AndreevLifshitz].Comment: 11 pages, 3 figure

An observation of spin-valve effects in a semiconductor field effect transistor: a novel spintronic device

We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either parallel or antiparallel to each other in different applied magnetic fields. The conducting medium was a two dimensional electron gas (2DEG) formed in an AlSb/InAs quantum well. Data from this device suggest that its resistance is controlled by two different types of spin-valve effect: the first occurring at the ferromagnet-2DEG interfaces; and the second occuring in direct propagation between contacts.Comment: 4 pages, 2 figure

A glassy contribution to the heat capacity of hcp 4^4He solids

We model the low-temperature specific heat of solid $^4$He in the hexagonal closed packed structure by invoking two-level tunneling states in addition to the usual phonon contribution of a Debye crystal for temperatures far below the Debye temperature, $T < \Theta_D/50$. By introducing a cutoff energy in the two-level tunneling density of states, we can describe the excess specific heat observed in solid hcp $^4$He, as well as the low-temperature linear term in the specific heat. Agreement is found with recent measurements of the temperature behavior of both specific heat and pressure. These results suggest the presence of a very small fraction, at the parts-per-million (ppm) level, of two-level tunneling systems in solid $^4$He, irrespective of the existence of supersolidity.Comment: 11 pages, 4 figure

Magnetotransport in two-dimensional electron gas at large filling factors

We derive the quantum Boltzmann equation for the two-dimensional electron gas in a magnetic field such that the filling factor $\nu \gg 1$. This equation describes all of the effects of the external fields on the impurity collision integral including Shubnikov-de Haas oscillations, smooth part of the magnetoresistance, and non-linear transport. Furthemore, we obtain quantitative results for the effect of the external microwave radiation on the linear and non-linear $dc$ transport in the system. Our findings are relevant for the description of the oscillating resistivity discovered by Zudov {\em et al.}, zero-resistance state discovered by Mani {\em et al.} and Zudov {\em et al.}, and for the microscopic justification of the model of Andreev {\em et al.}. We also present semiclassical picture for the qualitative consideration of the effects of the applied field on the collision integral.Comment: 28 pages, 19 figures; The discussion of the role of the effect of the microwave field on the distribution function is revised (see also cond-mat/0310668). Accepted in Phys. Rev.

Supercurrents through gated superconductor-normal-metal-superconductor contacts: the Josephson-transistor

We analyze the transport through a narrow ballistic superconductor-normal- metal-superconductor Josephson contact with non-ideal transmission at the superconductor-normal-metal interfaces, e.g., due to insulating layers, effective mass steps, or band misfits (SIN interfaces). The electronic spectrum in the normal wire is determined through the combination of Andreev- and normal reflection at the SIN interfaces. Strong normal scattering at the SIN interfaces introduces electron- and hole-like resonances in the normal region which show up in the quasi-particle spectrum. These resonances have strong implications for the critical supercurrent $I_c$ which we find to be determined by the lowest quasi-particle level: tuning the potential $\mu_{x0}$ to the points where electron- and hole-like resonances cross, we find sharp peaks in $I_{\rm c}$, resulting in a transitor effect. We compare the performance of this Resonant Josephson-Transistor (RJT) with that of a Superconducting Single Electron Transistor (SSET).Comment: to appear in PRB, 11 pages, 9 figure