HTS pulse-stretcher and second order modulator: design and first results

One of the remaining challenges in the application of superconducting electronics is the interfacing between superconducting and semiconducting environments. The voltage and speed mismatch between RSFQ pulses and semiconducting read-out electronics makes it necessary to amplify as well as stretch the RSFQ pulses. Moreover, circuits based on HTS (High Temperature Superconductor) technology are very attractive since they can operate under considerably relaxed cooling effort, which is one of the main problems with LTS (Low Temperature Superconductor) circuits. Within the European project SuperADC, a HTS second order sigma delta modulator and a pulse stretcher, used as an interface between the modulator and the first semi-conducting amplifier stage, have been designed at Twente University and will be presented here

Superconducting thin films of MgB2 on (001)-Si by pulsed laser deposition

Superconducting thin films have been prepared on Si-substrates, using pulsed laser deposition from a target composed of a mixture of Mg and MgB2 powders. The films were deposited at room temperature and post-annealed at 600 degrees C. The zero resistance transition temperatures were 12 K, with an onset transition temperature of 27 K. Special care has been taken to avoid oxidation of Mg in the laser plasma and deposited film, by optimizing the background pressure of Ar gas in the deposition chamber. For this the optical emission in the visible range from the plasma has been used as indicator. Preventing Mg from oxidation was found to be essential to obtain superconducting films

Theoretical calculations of the primary defects induced by pions and protons in SiC

In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV, is characterised theoretically by means of the concentration of primary defects per unit fluence. The results are compared to the similar ones corresponding to diamond, silicon and GaAs.Comment: 9 pages, 2 figures, in press to Nuclear Instruments and Methods in Physics Research A v2 - modified title, and major revision

Near‐millimeter‐wave response of high Tc ramp‐type Josephson junctions

We have studied the response of a YBCO/PBCO/YBCO ramp‐type junction to coherent radiation at 176 and 270 GHz. The I‐V characteristic of the junction closely resembles the prediction of the RSJ model. The I cR n product of the junction is 0.25 mV at 5 K. The millimeter‐wave radiation is coupled to the junction via a quasioptical structure that focuses the radiation onto the junction through a yttrium‐stabilized ZrO2 substrate. At 176 GHz, we have observed as many as six Shapiro steps at the maximum power level of our Gunn oscillator‐pumped frequency doubler. Shapiro steps are still clearly seen up to 65 K. The amplitudes of the zeroth, first, and second Shapiro steps, as functions of the square root of the radiation power, agree remarkably well with a Bessel function fit, indicating the junction is voltage‐biased at the radiation frequency (rf). At 270 GHz, due to a combination of the heavy rf loss in the ZrO2 substrate and the lack of radiation power, we have observed only the first Shapiro step

Noise properties of direct current SQUIDs with quasiplanar YBa2Cu3O7 Josephson junctions

We describe the noise performance of dc SQUIDs fabricated with quasiplanar ramp‐type Josephson junctions on the basis of c‐axis‐oriented YBa2Cu3O7/PrBa2Cu3O7 thin‐film heterostructures. The noise spectrum of the dc SQUIDs was measured with dc‐ and ac‐bias schemes at different temperatures and showed values below 10−5 Φ0/Hz1/2 down to frequencies of about 1 Hz at 70 K. Up to now for the magnetic fluxnoise and the energy resolution obtained at 1 kHz and 77 K the best values were 2.5×10−6, Φ0/Hz1/2 and 3×10−31 J/Hz, respectively. A study of the white and 1/fnoises of the SQUIDs was performed. The influence of magnetic flux, bias current, high static magnetic fields, and aging on the SQUID noise were investigated. The junctions and devices do not degrade due to aging in air or thermal cycling

Superconducting thin films of MgB2 on Si by pulsed laser deposition

Superconducting thin films have been prepared on Si-substrates, using pulsed laser deposition from a target composed of a mixture of Mg and MgB2 powders. The films were deposited at room temperature and annealed at 600°C. The zero resistance transition temperatures were 11-15.5 K, with an onset transition temperature of 27 K. Special care has been taken to avoid oxidation of Mg in the laser plasma and deposited film, by optimizing the background pressure of Ar gas in the deposition chamber. For this the optical emission in the visible range from the plasma has been used as indicator. Preventing Mg from oxidation was found to be essential to obtain superconducting films