Electronic structure induced reconstruction and magnetic ordering at the LaAlO3∣_3|SrTiO3_3 interface

Using local density approximation (LDA) calculations we predict GdFeO$_3$-like rotation of TiO$_6$ octahedra at the $n$-type interface between LaAlO$_3$ and SrTiO$_3$. The narrowing of the Ti $d$ bandwidth which results means that for very modest values of $U$, LDA$+U$ calculations predict charge and spin ordering at the interface. Recent experimental evidence for magnetic interface ordering may be understood in terms of the close proximity of an antiferromagnetic insulating ground state to a ferromagnetic metallic excited state

Spin-injection through an Fe/InAs Interface

The spin-dependence of the interface resistance between ferromagnetic Fe and InAs is calculated from first-principles for specular and disordered (001) interfaces. Because of the symmetry mismatch in the minority-spin channel, the specular interface acts as an efficient spin filter with a transmitted current polarisation between 98 an 89%. The resistance of a specular interface in the diffusive regime is comparable to the resistance of a few microns of bulk InAs. Symmetry-breaking arising from interface disorder reduces the spin asymmetry substantially and we conclude that efficient spin injection from Fe into InAs can only be realized using high quality epitaxial interfaces.Comment: 4 pages, 4 figure

Influence of Roughness and Disorder on Tunneling Magnetoresistance

A systematic, quantitative study of the effect of interface roughness and disorder on the magnetoresistance of FeCo$|$vacuum$|$FeCo magnetic tunnel junctions is presented based upon parameter-free electronic structure calculations. Surface roughness is found to have a very strong effect on the spin-polarized transport while that of disorder in the leads (leads consisting of a substitutional alloy) is weaker but still sufficient to suppress the huge tunneling magneto-resistance (TMR) predicted for ideal systems

Interface resistance of disordered magnetic multilayers

We study the effect of interface disorder on the spin-dependent interface resistances of Co/Cu, Fe/Cr and Au/Ag multilayers using a newly developed method for calculating transmission matrices from first-principles. The efficient implementation using tight-binding linear-muffin-tin orbitals allows us to model interface disorder using large lateral supercells whereby specular and diffuse scattering are treated on an equal footing. Without introducing any free parameters, quantitative agreement with experiment is obtained. We predict that disorder {\it reduces} the majority-spin interface resistance of Fe/Cr(100) multilayers by a factor 3.Comment: 5 pages, 2 figures, submitted to PR

Polarization dependent photoionization cross-sections and radiative lifetimes of atomic states in Ba

The photoionization cross-sections of two even-parity excited states, $5d6d ^3D_1$ and $6s7d ^3D_{2}$, of atomic Ba at the ionization-laser wavelength of 556.6 nm were measured. We found that the total cross-section depends on the relative polarization of the atoms and the ionization-laser light. With density-matrix algebra, we show that, in general, there are at most three parameters in the photoionization cross-section. Some of these parameters are determined in this work. We also present the measurement of the radiative lifetime of five even-parity excited states of barium.Comment: 11 pages, 7 figure

Orientation-Dependent Transparency of Metallic Interfaces

As devices are reduced in size, interfaces start to dominate electrical transport making it essential to be able to describe reliably how they transmit and reflect electrons. For a number of nearly perfectly lattice-matched materials, we calculate from first-principles the dependence of the interface transparency on the crystal orientation. Quite remarkably, the largest anisotropy is predicted for interfaces between the prototype free-electron materials silver and aluminium for which a massive factor of two difference between (111) and (001) interfaces is found

Quenching of Spin Hall Effect in Ballistic nano-junctions

We show that a nanometric four-probe ballistic junction can be used to check the presence of a transverse spin Hall current in a system with a Spin Orbit coupling not of the Rashba type, but rather due to the in-plane electric field. Indeed, the spin Hall effect is due to the presence of an effective small transverse magnetic field corresponding to the Spin Orbit coupling generated by the confining potential. The strength of the field and the junction shape characterize the quenching Hall regime, usually studied by applying semi-classical approaches. We discuss how a quantum mechanical relativistic effect, such as the Spin Orbit one, can be observed in a low energy system and explained by using classical mechanics techniques.Comment: 5 pages, 4 figures, PACS: 72.25.-b, 72.20.My, 73.50.Jt, to appear in Phys. Rev.

Spin Hall Effect and Spin Orbit coupling in Ballistic Nanojunctions

We propose a new scheme of spin filtering based on nanometric crossjunctions in the presence of Spin Orbit interaction, employing ballistic nanojunctions patterned in a two-dimensional electron gas. We demonstrate that the flow of a longitudinal unpolarized current through a ballistic X junction patterned in a two-dimensional electron gas with Spin Orbit coupling (SOC) induces a spin accumulation which has opposite signs for the two lateral probes. This spin accumulation, corresponding to a transverse pure spin current flowing in the junction, is the main observable signature of the spin Hall effect in such nanostructures. We benchmark the effects of two different kinds of Spin Orbit interactions. The first one ($\alpha$-SOC) is due to the interface electric field that confines electrons to a two-dimensional layer, whereas the second one ($\beta$-SOC) corresponds to the interaction generated by a lateral confining potential.Comment: 6 pages, 3 figure

Integer Spin Hall Effect in Ballistic Quantum Wires

We investigate the ballistic electron transport in a two dimensional Quantum Wire under the action of an electric field ($E_y$). We demonstrate how the presence of a Spin Orbit coupling, due to the uniform electric confinement field gives a non-commutative effect as in the presence of a transverse magnetic field. We discuss how the non commutation implies an edge localization of the currents depending on the electron spins also giving a semi-classical spin dependent Hall current. We also discuss how it is possible obtain a quantized Spin Hall conductance in the ballistic transport regime by developing the Landauer formalism and show the coupling between the spin magnetic momentum and the orbital one due to the presence of a circulating current.Comment: 7 pages, 5 figures, accepted for publication in Phys. Rev. B, PACS: 72.25.-b, 72.10.-d, 72.15.Rn, 73.23.-b, 71.10.P