The role of Auger recombination in the temperature-dependent output characteristics (T0=∞)(T0=∞) of pp-doped 1.3 μm quantum dot lasers

Temperature invariant output slope efficiency and threshold current (T0=∞)(T0=∞) in the temperature range of 5–75 °C have been measured for 1.3 μm pp-doped self-organized quantum dot lasers. Similar undoped quantum dot lasers exhibit T0=69 KT0=69 K in the same temperature range. A self-consistent model has been employed to calculate the various radiative and nonradiative current components in pp-doped and undoped lasers and to analyze the measured data. It is observed that Auger recombination in the dots plays an important role in determining the threshold current of the pp-doped lasers.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/71264/2/APPLAB-85-22-5164-1.pd

Mode Locking Stability Regimes in Tapered Quantum Dot Lasers

We predict the onset of leading and trailing edge instabilities in the optical pulse train of monolithic tapered passively mode-locked quantum dot lasers. Experimentally, we confirm these predictions by amplitude and timing stability analysis of the pulse trains

Modeling of InAs\GaAs QD-SOAs for amplification of ultra-short high power pulses

We present a model for the propagation of very short (hundreds of femtoseconds) high power pulses in QD-SOAs. We analyze the gain and refractive index dynamics after the pulse propagation and we determine how the electron and hole dynamics contribute to the recovery of the gain

Characterization and modeling of broad spectrum InAs-GaAs quantum-dot superluminescent diodes emitting at 1.2-1.3 μm

High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-?m region are demonstrated using InAs-GaAs quantum dots (QDs). The highest output powers of ?30-50 mW are achieved using 18 QD layers with p-doped GaAs spacers. At these high powers the device operates in a regime of broad bandwidth (?100 nm) with a spectral dip of ?5 dB between two separate peaks originated by the QD ground and excited states. Spectral calculations performed with a traveling-wave rate equation model show excellent agreement with the experimental data and provide design rules for optimizing the output spectrum. SLD characteristics are presented for two different device structures consisting of tilted and bent waveguides. The latter allows the achievement of higher output powers at lower currents. The coherence properties and the temperature characteristics are also discussed in detail. © 2007 IEE

Broadly tunable quantum-dot based ultra-short pulse laser system with different diffraction grating orders

A broadly tunable quantum-dot based ultra-short pulse master oscillator power amplifier with different diffraction grating orders as an external-cavity resonance feedback is studied. A broader tuning range, narrower optical spectra as well as higher peak power spectal density (maximun of 1.37 W/nm) from the second-order diffraction beam are achieved compared to those from the first-order diffraction beam in spite of slightly broader pulse duration from the second-order diffraction