2 research outputs found
Π‘ΡΠ°Π½Π΄Π°ΡΡΠ½ΡΠ΅ ΠΎΠ±ΡΠ°Π·ΡΡ Π²ΡΠ΅ΠΌΠ΅Π½ΠΈ ΠΆΠΈΠ·Π½ΠΈ Π½Π΅ΡΠ°Π²Π½ΠΎΠ²Π΅ΡΠ½ΡΡ Π½ΠΎΡΠΈΡΠ΅Π»Π΅ΠΉ Π·Π°ΡΡΠ΄Π° Π² ΠΌΠΎΠ½ΠΎΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΎΠΌ ΠΊΡΠ΅ΠΌΠ½ΠΈΠΈ
A comparison of two methods for measurement of the free carrier recombination lifetime in the unpassivated samples of high resistivity n-type silicon single crystalls (reference samples of "GIREDMET") was made. The methods were based on the photoconductivity decay measurements (High frequence and /-PCD). Effective recombination lifetime value in the range 1-1500 /is were achieved by changes of the sample thickness from 0,4 to 10 mm. Bulk recombination lifetime was calculated using the relation between the effective recombination lifetime and the sample thickness. It was shown that random and systematic errors for two methods are of the same order.ΠΡΠΎΠ²Π΅Π΄Π΅Π½ΠΎ ΡΡΠ°Π²Π½Π΅Π½ΠΈΠ΅ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠΎΠ² ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΠ³ΠΎ Π²ΡΠ΅ΠΌΠ΅Π½ΠΈ ΠΆΠΈΠ·Π½ΠΈ Π½Π΅ΡΠ°Π²Π½ΠΎΠ²Π΅ΡΠ½ΡΡ
Π½ΠΎΡΠΈΡΠ΅Π»Π΅ΠΉ Π·Π°ΡΡΠ΄Π° Π½Π° Π½Π΅ΠΏΠ°ΡΡΠΈΠ²ΠΈΡΠΎΠ²Π°Π½Π½ΡΡ
ΠΏΠ»Π°ΡΡΠΈΠ½Π°Ρ
Π²ΡΡΠΎΠΊΠΎΠΎΠΌΠ½ΠΎΠ³ΠΎ ΠΌΠΎΠ½ΠΎΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΊΡΠ΅ΠΌΠ½ΠΈΡ Π² ΠΈΠ½ΡΠ΅ΡΠ²Π°Π»Π΅ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΠ³ΠΎ Π²ΡΠ΅ΠΌΠ΅Π½ΠΈ ΠΆΠΈΠ·Π½ΠΈ 10-1500 ΠΌΠΊΡ ΠΈ ΡΠΎΠ»ΡΠΈΠ½Ρ 0,4-10 ΠΌΠΌ (Π‘ΠΠ Β«ΠΠΠ ΠΠΠΠΠ’Β») Π±Π΅ΡΠΊΠΎΠ½ΡΠ°ΠΊΡΠ½ΡΠΌΠΈ ΠΠ§- ΠΈ Π‘ΠΠ§-ΠΌΠ΅ΡΠΎ-Π΄Π°ΠΌΠΈ. ΠΡΠΎΠ²Π΅Π΄Π΅Π½Ρ ΠΎΡΠ΅Π½ΠΊΠΈ Π²ΡΠ΅ΠΌΠ΅Π½ΠΈ ΠΆΠΈΠ·Π½ΠΈ Π² ΠΎΠ±ΡΠ΅ΠΌΠ΅ ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»Π° ΠΏΠΎ Π·Π°Π²ΠΈΡΠΈΠΌΠΎΡΡΠΈ ΠΎΠ±ΡΠ°ΡΠ½ΠΎΠ³ΠΎ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΠ³ΠΎ Π²ΡΠ΅ΠΌΠ΅Π½ΠΈ ΠΆΠΈΠ·Π½ΠΈ ΠΎΡ ΠΊΠ²Π°Π΄ΡΠ°ΡΠ° ΠΎΠ±ΡΠ°ΡΠ½ΠΎΠΉ ΡΠΎΠ»ΡΠΈΠ½Ρ Π² ΠΈΠ½ΡΠ΅ΡΠ²Π°Π»Π΅ ΡΠΎΠ»ΡΠΈΠ½Ρ 1-4 ΠΌΠΌ. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΠΏΡΠΈΠ²Π΅Π΄Π΅Π½Π½Π°Ρ Π² ΠΏΠ°ΡΠΏΠΎΡΡΠ΅ Π‘ΠΠ ΠΏΠΎΠ³ΡΠ΅ΡΠ½ΠΎΡΡΡ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠΎΠ² ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ ΠΠ§-ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ Π² 10 % Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΠ·ΡΠ΅Ρ ΡΠ»ΡΡΠ°ΠΉΠ½ΡΡ ΠΏΠΎΠ³ΡΠ΅ΡΠ½ΠΎΡΡΡ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ, Π²Π΅Π»ΠΈΡΠΈΠ½Π° ΠΊΠΎΡΠΎΡΠΎΠΉ ΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΏΠΎΡΡΠ΄ΠΊΠ° ΡΠΎ ΡΠ»ΡΡΠ°ΠΉΠ½ΠΎΠΉ ΠΏΠΎΠ³ΡΠ΅ΡΠ½ΠΎΡΡΡΡ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ Π‘ΠΠ§-ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ Π½Π° ΡΡΡΠ°Π½ΠΎΠ²ΠΊΠ΅ Ρ ΠΊΠΎΠ»ΡΡΠ΅Π²ΡΠΌ Π·Π°Π·ΠΎΡΠΎΠΌ. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΠΠ§- ΠΈ Π‘ΠΠ§-ΠΌΠ΅ΡΠΎΠ΄Ρ ΠΈΠΌΠ΅ΡΡ ΡΠΈΡΡΠ΅ΠΌΠ°ΡΠΈΡΠ΅ΡΠΊΡΡ ΠΏΠΎΠ³ΡΠ΅ΡΠ½ΠΎΡΡΡ ΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΏΠΎΡΡΠ΄ΠΊΠ°
Reference samples of the silicon single crystalls free carrier recombination lifetime
A comparison of two methods for measurement of the free carrier recombination lifetime in the unpassivated samples of high resistivity n-type silicon single crystalls (reference samples of "GIREDMET") was made. The methods were based on the photoconductivity decay measurements (High frequence and /-PCD). Effective recombination lifetime value in the range 1-1500 /is were achieved by changes of the sample thickness from 0,4 to 10 mm. Bulk recombination lifetime was calculated using the relation between the effective recombination lifetime and the sample thickness. It was shown that random and systematic errors for two methods are of the same order