Density of States and Conductivity of Granular Metal or Array of Quantum Dots

The conductivity of a granular metal or an array of quantum dots usually has the temperature dependence associated with variable range hopping within the soft Coulomb gap of density of states. This is difficult to explain because neutral dots have a hard charging gap at the Fermi level. We show that uncontrolled or intentional doping of the insulator around dots by donors leads to random charging of dots and finite bare density of states at the Fermi level. Then Coulomb interactions between electrons of distant dots results in the a soft Coulomb gap. We show that in a sparse array of dots the bare density of states oscillates as a function of concentration of donors and causes periodic changes in the temperature dependence of conductivity. In a dense array of dots the bare density of states is totally smeared if there are several donors per dot in the insulator.Comment: 13 pages, 15 figures. Some misprints are fixed. Some figures are dropped. Some small changes are given to improve the organizatio

Superfluid-insulator transition and BCS-BEC crossover in dirty ultracold Fermi gas

Superfluid-insulator transition in an ultracold Fermi gas in the external disorder potential of the amplitude $V_0$ is studied as a function of the concentration of the gas $n$ and magnetic field $B$ in the presence of the Feshbach resonance. We find the zero temperature phase diagrams in the plane ($B,n$) at a given $V_0$ and in the plane $(V_0, n)$ at a given $B$. Our results for BEC side of the diagram are also valid for the superfluid-insulator transition in a Bose gas.Comment: Reference added, typos correcte

Coulomb gap in the one-particle density of states in three-dimensional systems with localized electrons

The one-particle density of states (1P-DOS) in a system with localized electron states vanishes at the Fermi level due to the Coulomb interaction between electrons. Derivation of the Coulomb gap uses stability criteria of the ground state. The simplest criterion is based on the excitonic interaction of an electron and a hole and leads to a quadratic 1P-DOS in the three-dimensional (3D) case. In 3D, higher stability criteria, including two or more electrons, were predicted to exponentially deplete the 1P-DOS at energies close enough to the Fermi level. In this paper we show that there is a range of intermediate energies where this depletion is strongly compensated by the excitonic interaction between single-particle excitations, so that the crossover from quadratic to exponential behavior of the 1P-DOS is retarded. This is one of the reasons why such exponential depletion was never seen in computer simulations.Comment: 6 pages, 1 figur

Slow relaxation of conductance of amorphous hopping insulators

We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of structural defects leading to formation of polarons close to the electron hopping states. An abrupt change in the gate voltage and corresponding shift of the chemical potential change populations of the hopping sites, which then slowly relax due to rearrangements of structural defects. As a result, the density of hopping states becomes time dependent on a scale relevant to rearrangement of the structural defects leading to the excess time dependent conductivity.Comment: 6 pages, 1 figur

Statistics of the Charging Spectrum of a Two-Dimensional Coulomb Glass Island

The fluctuations of capacitance of a two-dimensional island are studied in the regime of low electron concentration and strong disorder, when electrons can be considered classical particles. The universal capacitance distribution is found, with the dispersion being of the order of the average. This distribution is shown to be closely related to the shape of the Coulomb gap in the one-electron density of states of the island. Behavior of the the capacitance fluctuations near the metal - insulator transition is discussed.Comment: 4 pages, LaTex, 4 Postscript figures are included Discussion of the situation with screening by metallic gate is adde

Levy statistics and anomalous transport in quantum-dot arrays

A novel model of transport is proposed to explain power law current transients and memory phenomena observed in partially ordered arrays of semiconducting nanocrystals. The model describes electron transport by a stationary Levy process of transmission events and thereby requires no time dependence of system properties. The waiting time distribution with a characteristic long tail gives rise to a nonstationary response in the presence of a voltage pulse. We report on noise measurements that agree well with the predicted non-Poissonian fluctuations in current, and discuss possible mechanisms leading to this behavior.Comment: 7 pages, 2 figure

On dispersive energy transport and relaxation in the hopping regime

A new method for investigating relaxation phenomena for charge carriers hopping between localized tail states has been developed. It allows us to consider both charge and energy {\it dispersive} transport. The method is based on the idea of quasi-elasticity: the typical energy loss during a hop is much less than all other characteristic energies. We have investigated two models with different density of states energy dependencies with our method. In general, we have found that the motion of a packet in energy space is affected by two competing tendencies. First, there is a packet broadening, i.e. the dispersive energy transport. Second, there is a narrowing of the packet, if the density of states is depleting with decreasing energy. It is the interplay of these two tendencies that determines the overall evolution. If the density of states is constant, only broadening exists. In this case a packet in energy space evolves into Gaussian one, moving with constant drift velocity and mean square deviation increasing linearly in time. If the density of states depletes exponentially with decreasing energy, the motion of the packet tremendously slows down with time. For large times the mean square deviation of the packet becomes constant, so that the motion of the packet is ``soliton-like''.Comment: 26 pages, RevTeX, 10 EPS figures, submitted to Phys. Rev.

Coulomb gap in a model with finite charge transfer energy

The Coulomb gap in a donor-acceptor model with finite charge transfer energy $\Delta$ describing the electronic system on the dielectric side of the metal-insulator transition is investigated by means of computer simulations on two- and three-dimensional finite samples with a random distribution of equal amounts of donor and acceptor sites. Rigorous relations reflecting the symmetry of the model presented with respect to the exchange of donors and acceptors are derived. In the immediate neighborhood of the Fermi energy $\mu$ the the density of one-electron excitations $g(\epsilon)$ is determined solely by finite size effects and $g(\epsilon)$ further away from $\mu$ is described by an asymmetric power law with a non-universal exponent, depending on the parameter $\Delta$.Comment: 10 pages, 6 figures, submitted to Phys. Rev.

Electronic correlation effects and the Coulomb gap at finite temperature

We have investigated the effect of the long-range Coulomb interaction on the one-particle excitation spectrum of n-type Germanium, using tunneling spectroscopy on mechanically controllable break junctions. The tunnel conductance was measured as a function of energy and temperature. At low temperatures, the spectra reveal a minimum at zero bias voltage due to the Coulomb gap. In the temperature range above 1 K the Coulomb gap is filled by thermal excitations. This behavior is reflected in the temperature dependence of the variable-range hopping resitivity measured on the same samples: Up to a few degrees Kelvin the Efros-Shkovskii ln$R \propto T^{-1/2}$ law is obeyed, whereas at higher temperatures deviations from this law are observed, indicating a cross-over to Mott's ln$R \propto T^{-1/4}$ law. The mechanism of this cross-over is different from that considered previously in the literature.Comment: 3 pages, 3 figure

Hopping conduction in strong electric fields: Negative differential conductivity

Effects of strong electric fields on hopping conductivity are studied theoretically. Monte-Carlo computer simulations show that the analytical theory of Nguyen and Shklovskii [Solid State Commun. 38, 99 (1981)] provides an accurate description of hopping transport in the limit of very high electric fields and low concentrations of charge carriers as compared to the concentration of localization sites and also at the relative concentration of carriers equal to 0.5. At intermediate concentrations of carriers between 0.1 and 0.5 computer simulations evidence essential deviations from the results of the existing analytical theories. The theory of Nguyen and Shklovskii also predicts a negative differential hopping conductivity at high electric fields. Our numerical calculations confirm this prediction qualitatively. However the field dependence of the drift velocity of charge carriers obtained numerically differs essentially from the one predicted so far. Analytical theory is further developed so that its agreement with numerical results is essentially improved.Comment: 12 pages, 12 figures. References added, figures improve