944 research outputs found

    Electron Transport in Nanogranular Ferromagnets

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    We study electronic transport properties of ferromagnetic nanoparticle arrays and nanodomain materials near the Curie temperature in the limit of weak coupling between the grains. We calculate the conductivity in the Ohmic and non-Ohmic regimes and estimate the magnetoresistance jump in the resistivity at the transition temperature. The results are applicable for many emerging materials, including artificially self-assembled nanoparticle arrays and a certain class of manganites, where localization effects within the clusters can be neglected.Comment: 4 pages, 2 figure

    Density of States and Conductivity of Granular Metal or Array of Quantum Dots

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    The conductivity of a granular metal or an array of quantum dots usually has the temperature dependence associated with variable range hopping within the soft Coulomb gap of density of states. This is difficult to explain because neutral dots have a hard charging gap at the Fermi level. We show that uncontrolled or intentional doping of the insulator around dots by donors leads to random charging of dots and finite bare density of states at the Fermi level. Then Coulomb interactions between electrons of distant dots results in the a soft Coulomb gap. We show that in a sparse array of dots the bare density of states oscillates as a function of concentration of donors and causes periodic changes in the temperature dependence of conductivity. In a dense array of dots the bare density of states is totally smeared if there are several donors per dot in the insulator.Comment: 13 pages, 15 figures. Some misprints are fixed. Some figures are dropped. Some small changes are given to improve the organizatio

    Anomalously large capacitance of a plane capacitor with a two-dimensional electron gas

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    In electronic devices where a two-dimensional electron gas (2DEG) comprises one or both sides of a plane capacitor, the resulting capacitance CC can be larger than the "geometric capacitance" CgC_g determined by the physical separation dd between electrodes. This larger capacitance is known to result from the Coulomb correlations between individual electrons within the low density 2DEG, which lead to a negative thermodynamic density of states (negative compressibility). Experiments on such systems generally operate in the regime where the average spacing between electrons n1/2n^{-1/2} in the 2DEG is smaller than dd, and these experiments observe C>CgC > C_g by only a few percent. A recent experiment [1], however, has observed CC larger than CgC_g by almost 40% while operating in the regime nd2<<1nd^2 << 1. In this paper we argue that at nd2<<1nd^2 << 1 correlations between the electronic charge of opposite electrodes become important. We develop a theory of the capacitance for the full range of nd2nd^2. We show that, in the absence of disorder, the capacitance can be 4d/a4d/a times larger than the geometric value, where a<<da << d is the electron Bohr radius. Our results compare favorably with the experiment of Ref. [1] without the use of adjustable parameters.Comment: 8 pages, 6 figures; revised discussion of the zero density limit; some typos fixe

    Non-Ohmic variable-range hopping transport in one-dimensional conductors

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    We investigate theoretically the effect of a finite electric field on the resistivity of a disordered one-dimensional system in the variable-range hopping regime. We find that at low fields the transport is inhibited by rare fluctuations in the random distribution of localized states that create high-resistance ``breaks'' in the hopping network. As the field increases, the breaks become less resistive. In strong fields the breaks are overrun and the electron distribution function is driven far from equilibrum. The logarithm of the resistance initially shows a simple exponential drop with the field, followed by a logarithmic dependence, and finally, by an inverse square-root law.Comment: Version accepted to Phys. Rev. Let

    Solution of the tunneling-percolation problem in the nanocomposite regime

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    We noted that the tunneling-percolation framework is quite well understood at the extreme cases of percolation-like and hopping-like behaviors but that the intermediate regime has not been previously discussed, in spite of its relevance to the intensively studied electrical properties of nanocomposites. Following that we study here the conductivity of dispersions of particle fillers inside an insulating matrix by taking into account explicitly the filler particle shapes and the inter-particle electron tunneling process. We show that the main features of the filler dependencies of the nanocomposite conductivity can be reproduced without introducing any \textit{a priori} imposed cut-off in the inter-particle conductances, as usually done in the percolation-like interpretation of these systems. Furthermore, we demonstrate that our numerical results are fully reproduced by the critical path method, which is generalized here in order to include the particle filler shapes. By exploiting this method, we provide simple analytical formulas for the composite conductivity valid for many regimes of interest. The validity of our formulation is assessed by reinterpreting existing experimental results on nanotube, nanofiber, nanosheet and nanosphere composites and by extracting the characteristic tunneling decay length, which is found to be within the expected range of its values. These results are concluded then to be not only useful for the understanding of the intermediate regime but also for tailoring the electrical properties of nanocomposites.Comment: 13 pages with 8 figures + 10 pages with 9 figures of supplementary material (Appendix B

    Cyclotron enhancement of tunneling

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    A state of an electron in a quantum wire or a thin film becomes metastable, when a static electric field is applied perpendicular to the wire direction or the film surface. The state decays via tunneling through the created potential barrier. An additionally applied magnetic field, perpendicular to the electric field, can increase the tunneling decay rate for many orders of magnitude. This happens, when the state in the wire or the film has a velocity perpendicular to the magnetic field. According to the cyclotron effect, the velocity rotates under the barrier and becomes more aligned with the direction of tunneling. This mechanism can be called cyclotron enhancement of tunneling

    Numerical studies of variable-range hopping in one-dimensional systems

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    Hopping transport in a one-dimensional system is studied numerically. A fast algorithm is devised to find the lowest-resistance path at arbitrary electric field. Probability distribution functions of individual resistances on the path and the net resistance are calculated and fitted to compact analytic formulas. Qualitative differences between statistics of resistance fluctuations in Ohmic and non-Ohmic regimes are elucidated. The results are compared with prior theoretical and experimental work on the subject.Comment: 12 pages, 12 figures. Published versio

    Transport properties of chemically synthesized polypyrrole thin films

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    The electronic transport in polypyrrole thin films synthesized chemically from the vapor phase is studied as a function of temperature as well as of electric and magnetic fields. We find distinct differences in comparison to the behavior of both polypyrrole films prepared by electrochemical growth as well as of the bulk films obtained from conventional chemical synthesis. For small electric fields F, a transition from Efros-Shklovskii variable range hopping to Arrhenius activated transport is observed at 30 K. High electric fields induce short range hopping. The characteristic hopping distance is found to be proportional to F^(-1/2). The magnetoresistance R(B) is independent of F below a critical magnetic field, above which F counteracts the magnetic field induced localization.Comment: 6 pages, 5 figure
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