Renormalization analysis of intermittency in two coupled maps

The critical behavior for intermittency is studied in two coupled one-dimensional (1D) maps. We find two fixed maps of an approximate renormalization operator in the space of coupled maps. Each fixed map has a common relavant eigenvaule associated with the scaling of the control parameter of the uncoupled one-dimensional map. However, the relevant ``coupling eigenvalue'' associated with coupling perturbation varies depending on the fixed maps. These renormalization results are also confirmed for a linearly-coupled case.Comment: 11 pages, RevTeX, 2 eps figure

Exploring potential R&D collaboration partners through patent analysis based on bibliographic coupling and latent semantic analysis

The aim of the present research is to provide a new systematic methodology to explore potential R&D collaboration partners using patent information. The potential R&D collaboration partners are visualized as a patent assignee level-map based on technological similarity between patents by using network analysis. The proposed framework utilises two analytic methods to measure technological similarity. The first method, bibliographic coupling analysis, measures technological similarity based on the citation relationship using patent bibliographic information. Second, latent semantic analysis is utilized based on semantic similarity using patent textual information. The fuel cell membrane electrode assembly (MEA) technology field is selected and applied to illustrate the proposed methodology. The proposed approach allows firms, universities, research institutes, governments to identify potential R&D collaborators as a systematic decision-making support tool.This is an Accepted Manuscript of an article published by Taylor & Francis in Technology Analysis and Strategic Management on the 22nd of October 2014, available online: http://wwww.tandfonline.com/10.1080/09537325.2014.971004. This version will be under embargo until the 22nd of April 2016

Impurities, Quantum Interference and Quantum Phase Transitions in s-wave superconductors

We study the effects of quantum interference in impurity structures consisting of two or three magnetic impurities that are located on the surface of an s-wave superconductor. By using a self-consistent Bogoliubov-de Gennes formalism, we show that quantum interference leads to characteristic signatures not only in the local density of states (LDOS), but also in the spatial form of the superconducting order parameter. We demonstrate that the signatures of quantum interference in the LDOS are qualitatively, and to a large extent quantitatively unaffected by the suppression of the superconducting order parameter near impurities, which illustrates the robustness of quantum interference phenomena. Moreover, we show that by changing the interimpurity distance, or the impurities' scattering strength, the s-wave superconductor can be tuned through a series of first order quantum phase transitions in which the spin polarization of its ground state changes. In contrast to the single impurity case, this transition is not necessarily accompanied by a $\pi$-phase shift of the order parameter, and can in certain cases even lead to its enhancement. Our results demonstrate that the superconductor's LDOS, its spin state, and the spatial form of the superconducting order parameter are determined by a subtle interplay between the relative positions of the impurities and their scattering strength

Generalized BFT Formalism of Electroweak Theory in the Unitary Gauge

We systematically embed the SU(2)$\times$U(1) Higgs model in the unitary gauge into a fully gauge-invariant theory by following the generalized BFT formalism. We also suggest a novel path to get a first-class Lagrangian directly from the original second-class one using the BFT fields.Comment: 14 pages, Latex, no figure

Iron Nanoparticle-induced activation of plasma membrane H+-ATPase Promotes Stomatal Opening in Arabidopsis thaliana

Engineered nanomaterials (ENMs) enable the control and exploration of intermolecular interactions inside microscopic systems, but the potential environmental impacts of their inevitable release remain largely unknown. Plants exposed to ENMs display effects, such as increase in biomass and chlorophyll, distinct from those induced by exposure to their bulk counterparts, but few studies have addressed the mechanisms underlying such physiological results. The current investigation found that exposure of Arabidopsis thaliana to nano zerovalent iron (nZVI) triggered high plasma membrane H+-ATPase activity. The increase in activity caused a decrease in apoplastic pH, an increase in leaf area, and also wider stomatal aperture. Analysis of gene expression indicated that the levels of the H+-ATPase isoform responsible for stomatal opening, AHA2, were 5-fold higher in plants exposed to nZVI than in unexposed control plants. This is the first study to show that nZVI enhances stomatal opening by inducing the activation of plasma membrane H+-ATPase, leading to the possibility of increased CO2 uptake.X112119Ysciescopu

The quantization of the chiral Schwinger model based on the BFT-BFV formalism II

We apply an improved version of Batalin-Fradkin-Tyutin (BFT) Hamiltonian method to the a=1 chiral Schwinger Model, which is much more nontrivial than the a>1.$one. Furthermore, through the path integral quantization, we newly resolve the problem of the non-trivial$\delta$function as well as that of the unwanted Fourier parameter$\xi$ in the measure. As a result, we explicitly obtain the fully gauge invariant partition function, which includes a new type of Wess-Zumino (WZ) term irrelevant to the gauge symmetry as well as usual WZ action.Comment: 17 pages, To be published in J. Phys.

Non-monotonic magnetic field and density dependence of in-plane magnetoresistance in dilute two-dimensional holes in GaAs/AlGaAs

We studied low temperature (T=50mK) in-plane magnetoresistance of a dilute two-dimensional hole system in GaAs/AlGaAs heterostructure that exhibits an apparent metal-insulator transition. We found an anisotropic magnetoresistance, which changes dramatically at high in-plane fields (B_{\parallel}\agt5T) as the hole density is varied. At high densities where the system behaves metallic at $B_{\parallel}=0$, the transverse magnetoresistance is larger than the longitudinal magnetoresistance. With decreasing the hole density the difference becomes progressively smaller, and at densities near the "critical" density and lower, the longitudinal magnetoresistance becomes larger than the transverse magnetoresistance