5,311 research outputs found

    A mechanism for unipolar resistance switching in oxide non-volatile memory devices

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    Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a key role to produce a resistive commutation effect in qualitative agreement with recent experimental reports on binary transition metal oxide based sandwich structures.Comment: 4 pages, 2 figure

    Spin-triplet pairing instability of the spinon Fermi surface in a U(1) spin liquid

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    Recent experiments on the organic compound \kappa-(ET)_2Cu_2(CN)_3 have provided a promising example of a two dimensional spin liquid state. This phase is described by a two-dimensional spinon Fermi sea coupled to a U(1) gauge field. We study Kohn-Luttinger-like pairing instabilities of the spinon Fermi surface due to singular interaction processes with twice-the-Fermi-momentum transfer. We find that under certain circumstances the pairing instability occurs in odd-orbital-angular-momentum/spin-triplet channels. Implications to experiments are discussed.Comment: 4 pages, 1 figur

    Hysteresis Switching Loops in Ag-manganite memristive interfaces

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    Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through Hysteresis Switching Loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces.Comment: 14 pages, 3 figures, to be published in Jour. of Appl. Phy

    Performance of RF MEMS switches at low temperatures

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    The actuation voltage of microelectromechanical system (MEMS) \ud metal switches was investigated at temperatures ranging from 10 to 290 K. The investigation shows a 50% increase in the actuation voltage at low temperature. A comparison has been made using a published model and showed similar increment of actuation voltage at low temperature

    Construction and validation of a questionnaire to assess student satisfaction with mathematics learning materials

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    Sixth Edition Technological Ecosystems for Enhancing MulticulturalityMathematics is an essential branch for the scientific development and its study is mandatory in most university degrees. However, currently the level of academic performance and motivation of students to learn this science is not the desired one. The students can use different learning tools inside and outside the math classroom, enhancing the quality of the learning materials that are designed essentially to facilitate the learning of mathematics. The present research project aims to determine the validity and reliability of a measurement instrument that allows theassessment of the satisfaction of the students with the availablelearning materials. To fulfill the objectives of this research, the method of survey was used. A study with a quantitative approach was developed, which led to the design and validation of a questionnaire by a group of 7 experts. The validation closed after applying a pilot study with 728 students. It concluded positively, obtaining nine factors that coincide with the revision of the literature: technological quality, quality of content, visual quality, didactic significance, adequacy of content, relationship between theory and practice, involvement, contribution to learning, relevance and interaction between educational actors. The results of this questionnaire provide to the international scientific community with relevant information for the design, selection, and use of study materials in the classrooms, which will contribute to raising the levels of student engagement, and their academic performance in mathematics, secondaril

    Four-quark Operators Relevant to B Meson Lifetimes from QCD Sum Rules

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    At the order of 1/m_b^3, the B meson lifetimes are controlled by the hadronic matrix elements of some four-quark operators. The nonfactorizable magnitudes of these four-quark operator matrix elements are analyzed by QCD sum rules in the framework of heavy quark effective theory. The vacuum saturation for color-singlet four-quark operators is justified at hadronic scale, and the nonfactorizable effect is at a few percent level. However for color-octet four-quark operators, the vacuum saturation is violated sizably that the nonfactorizable effect cannot be neglected for the B meson lifetimes. The implication to the extraction of some of the parameters from B decays is discussed. The B meson lifetime ratio is predicted as \tau(B^-)/\tau(B^0)=1.09\pm 0.02. However, the experimental result of the lifetime ratio \tau(\Lambda_b)/\tau(B^0) still cannot be explained.Comment: 20 pages, latex, 6 figures, discussion on non-factorizable effect of the four-quark condensate added, to appear in Phys. Rev. D57 (1998

    Strong enhancement of drag and dissipation at the weak- to strong- coupling phase transition in a bi-layer system at a total Landau level filling nu=1

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    We consider a bi-layer electronic system at a total Landau level filling factor nu =1, and focus on the transition from the regime of weak inter-layer coupling to that of the strongly coupled (1,1,1) phase (or ''quantum Hall ferromagnet''). Making the assumption that in the transition region the system is made of puddles of the (1,1,1) phase embedded in a bulk of the weakly coupled state, we show that the transition is accompanied by a strong increase in longitudinal Coulomb drag, that reaches a maximum of approximately h/2e2h/2e^{2}. In that regime the longitudinal drag is increased with decreasing temperature.Comment: four pages, one included figur

    U(1) spin liquids and valence bond solids in a large-N three-dimensional Heisenberg model

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    We study possible quantum ground states of the Sp(N) generalized Heisenberg model on a cubic lattice with nearest-neighbor and next-nearest-neighbor exchange interactions. The phase diagram is obtained in the large-N limit and fluctuation effects are considered via appropriate gauge theories. In particular, we find three U(1) spin liquid phases with different short-range magnetic correlations. These phases are characterized by deconfined gapped spinons, gapped monopoles, and gapless ``photons''. As N becomes smaller, a confinement transition from these phases to valence bond solids (VBS) may occur. This transition is studied by using duality and analyzing the resulting theory of monopoles coupled to a non-compact dual gauge field; the condensation of the monopoles leads to VBS phases. We determine the resulting VBS phases emerging from two of the three spin liquid states. On the other hand, the spin liquid state near J_1 \approx J_2 appears to be more stable against monopole condensation and could be a promising candidate for a spin liquid state in real systems.Comment: revtex file 12 pages, 17 figure

    Coulomb drag as a signature of the paired quantum Hall state

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    Motivated by the recent Coulomb drag experiment of M. P. Lilly et. al, we study the Coulomb drag in a two-layer system with Landau level filling factor ν=1/2\nu=1/2. We find that the drag conductivity in the incompressible paired quantum Hall state at zero temperature can be finite. The drag conductivity is also greatly enhanced above TcT_c, at which the transition between the weakly coupled compressible liquids and the paired quantum Hall liquid takes place. We discuss the implications of our results for the recent experiment.Comment: 4 pages, 1 figure included, replaced by the published versio
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