Electron Spin Relaxation under Drift in GaAs

Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of moderate drift fields and/or non-zero injection energies. For relatively low fields (a couple of kV/cm), a substantial amount of spin polarization is preserved for several microns at 300 K. However, it is also found that the spin relaxation rate increases rapidly with the drift field, scaling as the square of the electron wavevector in the direction of the field. When the electrons are injected with a high energy, a pronounced decrease is observed in the spin relaxation length due to an initial increase in the spin precession frequency. Hence, high-field or high-energy transport conditions may not be desirable for spin-based devices.Comment: 4 pages, 3 figures, one table. Scheduled for publication in the May 26, 2003 issue of Applied Physics Letters (039321APL

Production of the pentaquark Θ+\Theta^+ in npnp scattering

We study $np\to \Lambda\Theta^{+}$ and $np\to \Sigma^{0}\Theta^{+}$ processes for both of the positive and negative parities of the $\Theta^{+}$. Employing the effective chiral Lagrangians for the $KNY$ and $K^*NY$ interactions, we calculate differential cross sections as well as total cross sections for the $np\to \Sigma^0 \Theta^+$ and $np\to \Lambda\Theta^+$ reactions. The total cross sections for the positive-parity $\Theta^+$ turn out to be approximately ten times larger than those for the negative parity $\Theta^+$ in the range of the CM energy $\sqrt{s}_{\rm th}\le \sqrt{s}\le 3.5 {\rm GeV}$. The results are rather sensitive to the mechanism of $K$ exchanges in the $t$ -- channel.Comment: 9 pages and 11 figure

Quantum network architecture of tight-binding models with substitution sequences

We study a two-spin quantum Turing architecture, in which discrete local rotations \alpha_m of the Turing head spin alternate with quantum controlled NOT-operations. Substitution sequences are known to underlie aperiodic structures. We show that parameter inputs \alpha_m described by such sequences can lead here to a quantum dynamics, intermediate between the regular and the chaotic variant. Exponential parameter sensitivity characterizing chaotic quantum Turing machines turns out to be an adequate criterion for induced quantum chaos in a quantum network.Comment: Accepted for publication in J. mod. Optics [Proc. Workshop "Entanglement and Decoherence", Gargnano (Italy), Sept 1999], 3 figure

Generalized BFT Formalism of Electroweak Theory in the Unitary Gauge

We systematically embed the SU(2)$\times$U(1) Higgs model in the unitary gauge into a fully gauge-invariant theory by following the generalized BFT formalism. We also suggest a novel path to get a first-class Lagrangian directly from the original second-class one using the BFT fields.Comment: 14 pages, Latex, no figure

Correlation Assisted Phonon Softenings and the Mott-Peierls Transition in VO2_{2}

To explore the driving mechanisms of the metal-insulator transition (MIT) and the structural transition in VO2, we have investigated phonon dispersions of rutile VO2 (R-VO2) in the DFT and the DFT+U (U : Coulomb correlation) band calculations. We have found that the phonon softening instabilities occur in both cases, but the softened phonon mode only in the DFT+U describes properly both the MIT and the structural transition from R-VO2 to monoclinic VO2 (M1-VO2). This feature demonstrates that the Coulomb correlation effect plays an essential role of assisting the Peierls transition in R-VO2. We have also found from the phonon dispersion of M1-VO2 that M1 structure becomes unstable under high pressure. We have predicted a new phase of VO2 at high pressure that has a monoclinic CaCl2-type structure with metallic nature

Resonance-like electrical control of electron spin for microwave measurement

We demonstrate that the spin-polarized electron current can interact with a microwave electric field in a resonant manner. The spin-orbit interaction gives rise to an effective magnetic field proportional to the electric current. In the presence of both dc and ac electric field components, electron spin resonance occurs if the ac frequency matches with the spin precession frequency that is controlled by the dc field. In a device consisting of two spin-polarized contacts connected by a two-dimensional channel, this mechanism allows electrically tuned detection of the ac signal frequency and amplitude. For GaAs, such detection is effective in the frequency domain around tens of gigahertz.Comment: 10 pages, 2 figure