Efficient light amplification in low gain materials due to a photonic band edge effect

One of the possibilities of increasing optical gain of a light emitting source is by embedding it into a photonic crystal (PhC). If the properties of the PhC are tuned so that the emission wavelength of the light source with gain falls close to the photonic band edge of the PhC, then due to low group velocity of the light modes near the band edge caused by many multiple reflections of light on the photonic structure, the stimulated emission can be significantly enhanced. Here, we perform simulation of the photonic band edge effect on the light intensity of spectrally broad source interacting with a diamond PhC with low optical gain. We show that even for the case of low gain, up to 10-fold increase of light intensity output can be obtained for the two-dimensional PhC consisting of only 19 periodic layers of infinitely high diamond rods ordered into a square lattice. Moreover, considering the experimentally feasible structure composed of diamond rods of finite height - PhC slab - we show that the gain enhancement, even if reduced compared to the ideal case of infinite rods, still remains relatively high. For this particular structure, we show that up to 3.5-fold enhancement of light intensity can be achieved. (C) 2012 Optical Society of Americ

Temperature dependence of the band gap of zinc nitride observed in photoluminescence measurements

We report the photoluminescence properties of DC sputtered zinc nitride thin films in the temperature range of 3.7–300 K. Zinc nitride samples grown at 150 °C exhibited a narrow photoluminescence band at 1.38 eV and a broad band at 0.90 eV, which were attributed to the recombination of free carriers with a bound state and deep-level defect states, respectively. The high-energy band followed the Varshni equation with temperature and became saturated at high excitation powers. These results indicate that the high-energy band originates from shallow defect states in a narrow bandgap. Furthermore, a red-shift of the observed features with increasing excitation power suggested the presence of inhomogeneities within the samples

Active planar optical waveguide made from luminescent silicon nanocrystals

We show experimentally that a layer of silicon nanocrystals, prepared by the Si-ion implantation (with the energy of 400 keV) into a synthetic silica slab and exhibiting room-temperature red photoluminescence, can serve simultaneously as a single-mode planar optical waveguide. The waveguide is shown to self-select guided transverse electric and transverse magnetic modes from the broad photoluminescence emission of the nanocrystals resulting in a substantially narrower emission spectrum for these modes. We further report on an investigation of optical gain in a sample implanted to a dose of 4×1017 cm−2. Despite the occurrence of strong waveguiding, results of the variable stripe length method turned out not to be able to give unambiguous evidence for optical gai

Two-dimensional photonic crystal slab with embedded silicon nanocrystals: Efficient photoluminescence extraction:

A two-dimensional photonic crystal (PhC) slab was fabricated from a luminescent planar waveguide, formed by a (800 nm thick) layer of silicon nanocrystals (SiNCs) embedded in a polished silica plate. Dimensions of the PhC were designed so that light emitted by SiNCs under excitation with an external UV source can, during its propagation in the layer, interact with the periodicity and be Bragg-diffracted into air. This approach leads to up to 8-fold vertical extraction enhancement of SiNCs luminescence from the PhC slab compared to the bare planar layer. Results of the experiment are supported by the computer simulation. (C) 2013 AIP Publishing LLC

Enhanced photoluminescence extraction efficiency from a diamond photonic crystal via leaky modes

Two-dimensional photonic crystal can be exploited as the top part of a light source in order to increase its extraction efficiency. Here, we report on the room-temperature intrinsic photoluminescence (PL) behavior of a nanocrystalline diamond (NCD) layer with diamond columns prepared on the top and periodically ordered into the lattice with square symmetry. Angle-resolved far-field measurements in the Gamma-X crystal direction of broadband visible PL revealed up to six-fold enhancement of extraction efficiency as compared to a smooth NCD layer. A photonic band diagram above the lightcone derived from these measurements is in agreement with the diagram obtained from transmission measurements and simulation, suggesting that the enhancement is primarily due to light's coupling to leaky modes

Luminescence of free-standing versus matrix-embedded oxide-passivated silicon nanocrystals: The role of matrix-induced strain:

We collect a large number of experimental data from various sources to demonstrate that free-standing (FS) oxide-passivated silicon nanocrystals (SiNCs) exhibit considerably blueshifted emission, by 200 meV on average, compared to those prepared as matrix-embedded (ME) ones of the same size. This is suggested to arise from compressive strain, exerted on the nanocrystals by their matrix, which plays an important role in the light-emission process; this strain has been neglected up to now as opposed to the impact of quantum confinement or surface passivation. Our conclusion is also supported by the comparison of low-temperature behavior of photoluminescence of matrix-embedded and free-standing silicon nanocrystals