61 research outputs found
Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions
We calculate quantum transport for metal-graphene nanoribbon heterojunctions
within the atomistic self-consistent Schr\"odinger/Poisson scheme. Attention is
paid on both the chemical aspects of the interface bonding as well the
one-dimensional electrostatics along the ribbon length. Band-bending and doping
effects strongly influence the transport properties, giving rise to conductance
asymmetries and a selective suppression of the subband formation. Junction
electrostatics and p-type characteristics drive the conduction mechanism in the
case of high work function Au, Pd and Pt electrodes, while contact resistance
becomes dominant in the case of Al.Comment: 4 pages, 5 figure
Insulator-metal transition in biased finite polyyne systems
A method for the study of the electronic transport in strongly coupled
electron-phonon systems is formalized and applied to a model of polyyne chains
biased through metallic Au leads. We derive a stationary non equilibrium
polaronic theory in the general framework of a variational formulation. The
numerical procedure we propose can be readily applied if the electron-phonon
interaction in the device hamiltonian can be approximated as an effective
single particle electron hamiltonian. Using this approach, we predict that
finite polyyne chains should manifest an insulator-metal transition driven by
the non-equilibrium charging which inhibits the Peierls instability
characterizing the equilibrium state.Comment: to appear at EPJ
Electron backscattering from stacking faults in SiC by means of \textit{ab initio} quantum transport calculations
We study coherent backscattering phenomena from single and multiple stacking
faults (SFs) in 3C- and 4H-SiC within density functional theory quantum
transport calculations. We show that SFs give rise to highly dispersive bands
within both the valance and conduction bands that can be distinguished for
their enhanced density of states at particular wave number subspaces. The
consequent localized perturbation potential significantly scatters the
propagating electron waves and strongly increases the resistance for -doped
systems. We argue that resonant scattering from SFs should be one of the
principal degrading mechanisms for device operation in silicon carbide.Comment: 5 pages, 4 figure
Phonon Driven Nonlinear Electrical Behavior in Molecular Devices
Electronic transport in a model molecular device coupled to local phonon
modes is theoretically analyzed. The method allows for obtaining an accurate
approximation of the system's quantum state irrespective of the electron and
phonon energy scales. Nonlinear electrical features emerge from the calculated
current-voltage characteristics. The quantum corrections with respect to the
adiabatic limit characterize the transport scenario, and the polaronic
reduction of the effective device-lead coupling plays a fundamental role in the
unusual electrical features.Comment: 14 pages, 4 figure
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An Experimental Evaluation of Resistive Defects and Different Testing Solutions in Low-Power Back-Biased SRAM Cells
This paper compares different types of resistive defects that may occur inside low-power SRAM cells, focusing on their impact on device operation. Notwithstanding the continuous evolution of SRAM device integration, manufacturing processes continue to be very sensitive to production faults, giving rise to defects that can be modeled as resistances, especially for devices designed to work in low-power modes. This work analyzes this type of resistive defect that may impair the device functionalities in subtle ways, depending on the defect characteristics and values that may not be directly or easily detectable by traditional test methods. We analyze each defect in terms of the possible effects inside the SRAM cell, its impact on power consumption, and provide guidelines for selecting the best test methods
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