Multidipping Technique for Fabrication Time Reduction and Performance Improvement of Solution-Processed Single-Walled Carbon Nanotube Thin-Film Transistors

Herein, a simple and effective technique, "multidipping technique," is implemented to rapidly form random networks of single-walled carbon nanotubes (SWCNTs) used as a channel material in solution-processed thin-film transistors (TFTs). The multidipping process consists of repetition of dipping a substrate into a dispersed semiconducting SWCNT solution and rinsing the substrate between each dipping process. Compared with the conventional dipping method, this technique reduces total deposition time required to form high-quality SWCNT networks by more than half and simultaneously improves the electrical performances of SWCNT TFTs. These phenomena are also comprehensively analyzed with experiments and microscopic images of the channel region, which well show morphology of the SWCNT networks. It is believed that the low-temperature process and facile deposition method of SWCNT networks can provide a guideline for high-throughput fabrication of high-performance SWCNT TFT arrays in flexible active matrix sensor array and display applications.N

The Association between Excessive Internet Gaming Behavior and Immersive Tendency, Mediated by Attention Deficit/Hyperactivity Disorder Symptoms, in Korean Male University Students

Objective Problematic online gaming (POG) and problematic Internet use (PIU) have become a serious public mental health problem, with Internet gaming disorder (IGD) included in "Conditions for further study" section of DSM-5. Although higher immersive tendency is observed in people affected by POG, little is known about the simultaneous effect of immersive tendency and its highly comorbid mental disorder, attention deficit/hyperactivity disorder (ADHD). This study aimed to assess the relationship between immersive tendency, ADHD, and IGD. Methods Cross-sectional interview study was conducted in Seoul, Korea with 51 male undergraduate students; 23 active garners and 28 controls. Results Current ADHD symptoms showed partial mediation effect on the path of immersive tendency on POG and PIU. The mediation model with inattention explained variance in both POG and PIU better than other current ADHD symptom models (R-2=69.2 in POG; 69.3 in PIU). Childhood ADHD symptoms models demonstrated mediation effect on both POG and PIU which explained less variance than current ADHD symptom models (R-2 =53.7 in POG; 52.1 in PIU). Current ADHD symptoms, especially inattention, appear to mediate the effect of immersive tendency on POG/PIU. Conclusion Immersive tendencies may entail greater susceptibility to IGD, and comorbidity with ADHD may mediate the effect of immersive tendency on IGD

Multidipping Technique for Fabrication Time Reduction and Performance Improvement of Solution‐Processed Single‐Walled Carbon Nanotube Thin‐Film Transistors

Herein, a simple and effective technique, "multidipping technique," is implemented to rapidly form random networks of single-walled carbon nanotubes (SWCNTs) used as a channel material in solution-processed thin-film transistors (TFTs). The multidipping process consists of repetition of dipping a substrate into a dispersed semiconducting SWCNT solution and rinsing the substrate between each dipping process. Compared with the conventional dipping method, this technique reduces total deposition time required to form high-quality SWCNT networks by more than half and simultaneously improves the electrical performances of SWCNT TFTs. These phenomena are also comprehensively analyzed with experiments and microscopic images of the channel region, which well show morphology of the SWCNT networks. It is believed that the low-temperature process and facile deposition method of SWCNT networks can provide a guideline for high-throughput fabrication of high-performance SWCNT TFT arrays in flexible active matrix sensor array and display applications.N

Tunable Stability of All-Inkjet-Printed Double-Gate Carbon Nanotube Thin Film Transistors

In this letter, we improved the stability of all-inkjet-printed carbon nanotube thin film transistors (CNT TFTs) by employing a double gate (DG) structure under an optimal bias condition. In the single-gate structure, the positive threshold voltage (VTH) shift under 10 V positive gate bias stress (PGBS) was significantly reduced with poly(4-vinylphenol) passivation. However, after 100 s, the on-current level was decreased, and a large negative VTH shift was observed. We adopted DG CNT TFTs for a further improvement. When-3V was applied to the top gate, the DG CNT TFTs not only exhibited a much lower VTH shift but also showed a stabilized on-current level. When an appropriate bias is applied to the top gate, charge trapping is induced at the top gate interface and it might balance between the positive and negative shifts. As a result, the overall stress effect is reduced. The p-type only inverter adopting a DG CNT TFT showed improved stability under -3 V of top gate bias. Our experimental result shows that DG structure is a promising candidate for various CNT circuit designs.N