Inverse Design of Terahertz Nanoresonators through Physics-Informed Machine Learning

The rapid development of 6G communications using terahertz (THz) electromagnetic waves has created a demand for highly sensitive THz nanoresonators capable of detecting these waves. Among the potential candidates, THz nanogap loop arrays show promising characteristics but require significant computational resources for accurate simulation. This requirement arises because their unit cells are 10 times smaller than millimeter wavelengths, with nanogap regions that are 1,000,000 times smaller. To address this challenge, we propose a rapid inverse design method for terahertz nanoresonators using physics-informed machine learning, specifically employing double deep Q-learning combined with an analytical model of the THz nanogap loop array. Through approximately 200,000 iterations in about 39 hours on a middle-level personal computer (CPU: 3.40 GHz, 6 cores, 12 threads, RAM: 16 GB, GPU: NVIDIA GeForce GTX 1050), our approach successfully identifies the optimal structure, resulting in an experimental electric field enhancement of 32,000 at 0.2 THz, 300% stronger than previous achievements. By leveraging our analytical model-based approach, we significantly reduce the computational resources required, providing a viable alternative to the impractical numerical simulation-based inverse design that was previously impractical

The C677 Mutation in Methylene Tetrahydrofolate Reductase Gene: Correlation with Uric Acid and Cardiovascular Risk Factors in Elderly Korean men

The C677T mutation in the methylene tetrahydrofolate reductase (MTHFR) gene results in elevated homocysteine levels and, presumably, in increased cardiovascular risk. Moreover, elevated homocysteine levels are reportedly associated with high serum uric acid levels. We evaluated the MTHFR genotype and a panel of biochemical, hematological variables, and lifestyle characteristics in 327 elderly Korean men (age range 40-81 yr; mean, 51.87). This study shows that mutation of the MTHFR gene may be a risk for hyperuricemia. The mean uric acid levels for the C/C, C/T and T/T genotypes were 5.54, 5.91 and 6.33 mg/dL, respectively (p=0.000). The T/T genotype was significantly more frequent in subjects with high uric acid levels (p=0.003). Thus, this mutation of the MTHFR gene is implied by the study results to be a risk factor of hyperuricemia in elderly Korean men. However, the relationship between the MTHFR mutation and uric acid metabolism remains unclear. Therefore, further studies are necessary to explain the associated between the MTHFR mutation and elevated uric acid levels, and to examine potential relationships between it and conventional cardiovascular risk factors

Structural Anisotropy in Sb Thin Films

Sb thin films have attracted wide interests due to their tunable band structure, topological phases, and remarkable electronic properties. We successfully grow epitaxial Sb thin films on a closely lattice-matched GaSb(001) surface by molecular beam epitaxy. We find a novel anisotropic directional dependence of their structural, morphological, and electronic properties. The origin of the anisotropic features is elucidated using first-principles density functional theory (DFT) calculations. The growth regime of crystalline and amorphous Sb thin films was determined by mapping the surface reconstruction phase diagram of the GaSb(001) surface under Sb$_2$ flux, with confirmation of structural characterizations. Crystalline Sb thin films show a rhombohedral crystal structure along the rhombohedral (104) surface orientation parallel to the cubic (001) surface orientation of the GaSb substrate. At this coherent interface, Sb atoms are aligned with the GaSb lattice along the [1-10] crystallographic direction but are not aligned well along the [110] crystallographic direction, which results in anisotropic features in reflection high-energy electron diffraction patterns, surface morphology, and transport properties. Our DFT calculations show that the anisotropic features originate from the GaSb surface, where Sb atoms align with the Ga and Sb atoms on the reconstructed surface. The formation energy calculations confirm that the stability of the experimentally observed structures. Our results provide optimal film growth conditions for further studies of novel properties of Bi$_{1-x}$Sb$_x$ thin films with similar lattice parameters and an identical crystal structure as well as functional heterostructures of them with III-V semiconductor layers along the (001) surface orientation, supported by a theoretical understanding of the anisotropic film orientation