5,238 research outputs found
Criterion of multi-switching stability for magnetic nanoparticles
We present a procedure to study the switching and the stability of an array
of magnetic nanoparticles in the dynamical regime. The procedure leads to the
criterion of multi-switching stability to be satisfied in order to have stable
switching. The criterion is used to compare various magnetic-field-induced
switching schemes, either present in the literature or suggested in the present
work. In particular, we perform micromagnetic simulations to study the
magnetization trajectories and the stability of the magnetization after
switching for nanoparticles of elliptical shape. We evaluate the stability of
the switching as a function of the thickness of the particles and the rise and
fall times of the magnetic pulses, both at zero and room temperature.
Furthermore, we investigate the role of the dipolar interaction and its
influence on the various switching schemes. We find that the criterion of
multi-switching stability can be satisfied at room temperature and in the
presence of dipolar interactions for pulses shaped according to CMOS
specifications, for switching rates in the GHz regime
Simulation of structural and electronic properties of amorphous tungsten oxycarbides
Electron beam induced deposition with tungsten hexacarbonyl W(CO)6 as
precursors leads to granular deposits with varying compositions of tungsten,
carbon and oxygen. Depending on the deposition conditions, the deposits are
insulating or metallic. We employ an evolutionary algorithm to predict the
crystal structures starting from a series of chemical compositions that were
determined experimentally. We show that this method leads to better structures
than structural relaxation based on guessed initial structures. We approximate
the expected amorphous structures by reasonably large unit cells that can
accommodate local structural environments that resemble the true amorphous
structure. Our predicted structures show an insulator to metal transition close
to the experimental composition at which this transition is actually observed.
Our predicted structures also allow comparison to experimental electron
diffraction patterns.Comment: 17 Pages, 11 figure
Fabrication of FeSi and Fe3Si compounds by electron beam induced mixing of [Fe/Si]2 and [Fe3/Si]2 multilayers grown by focused electron beam induced deposition
Fe-Si binary compounds have been fabricated by focused electron beam induced
deposition by the alternating use of iron pentacarbonyl, Fe(CO)5, and
neopentasilane, Si5H12 as precursor gases. The fabrication procedure consisted
in preparing multilayer structures which were treated by low-energy electron
irradiation and annealing to induce atomic species intermixing. In this way we
are able to fabricate FeSi and Fe3Si binary compounds from [Fe=Si]2 and
[Fe3=Si]2 multilayers, as shown by transmission electron microscopy
investigations. This fabrication procedure is useful to obtain nanostructured
binary alloys from precursors which compete for adsorption sites during growth
and, therefore, cannot be used simultaneously
High- field-effect transistor with copper-phthalocyanine
The use of SrTiO dielectrics as high-permittivity insulator in organic
thin film field effect transistors (FET) is evaluated. Field-effect transistors
with sputtered SrTiO and copper-phthalocyanine (CuPc) as semiconducting
layer were fabricated. The device preparation was performed in-situ in an ultra
high vacuum chamber system. The dielectric in the transistors had a
permittivity of up to 200 which led to low driving voltages of 3 V. The field
effect transistors were p-type and reached mobilities of about cm/Vs and an on/off ratio of . These properties are compared
to devices based on other dielectric materials.Comment: 9 pages, 6 figure
Magnetotransport properties of iron microwires fabricated by focused electron beam induced autocatalytic growth
We have prepared iron microwires in a combination of focused electron beam
induced deposition (FEBID) and autocatalytic growth from the iron
pentacarbonyl, Fe(CO)5, precursor gas under UHV conditions. The electrical
transport properties of the microwires were investigated and it was found that
the temperature dependence of the longitudinal resistivity (rhoxx) shows a
typical metallic behaviour with a room temperature value of about 88
micro{\Omega} cm. In order to investigate the magnetotransport properties we
have measured the isothermal Hall-resistivities in the range between 4.2 K and
260 K. From these measurements positive values for the ordinary and the
anomalous Hall coefficients were derived. The relation between anomalous Hall
resistivity (rhoAN) and longitudinal resistivity is quadratic, rhoAN rho^2 xx,
revealing an intrinsic origin of the anomalous Hall effect. Finally, at low
temperature in the transversal geometry a negative magnetoresistance of about
0.2 % was measured
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