A newly developed transparent and flexible one-transistor memory device using advanced nanomaterials for medical and artificial intelligence applications

A newly developed transparent and flexible one-transistor memory device using advanced nanomaterials for medical and artificial intelligence application

Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness

Background: Artificial synaptic behaviors are necessary to investigate and implement since they are considered to be a new computing mechanism for the analysis of complex brain information. However, flexible and transparent artificial synapse devices based on thin-film transistors (TFTs) still need further research. Purpose: To study the application of flexible and transparent thin-film transistors with nanometer thickness on artificial synapses. Materials and Methods: Here, we report the design and fabrication of flexible and transparent artificial synapse devices based on TFTs with polyethylene terephthalate (PET) as the flexible substrate, indium tin oxide (ITO) as the gate and a polyvinyl alcohol (PVA) grid insulating layer as the gate insulation layer at room temperature. Results: The charge and discharge of the carriers in the flexible and transparent thin-film transistors with nanometer thickness can be used for artificial synaptic behavior. Conclusion: In summary, flexible and transparent thin-film transistors with nanometer thickness can be used as pressure and temperature sensors. Besides, inherent charge transfer characteristics of indium gallium zinc oxide semiconductors have been employed to study the biological synapse-like behaviors, including synaptic plasticity, excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and long-term memory (LTM). More precisely, the spike rate plasticity (SRDP), one representative synaptic plasticity, has been demonstrated. Such TFTs are interesting for building future neuromorphic systems and provide a possibility to act as fundamental blocks for neuromorphic system applications

Transparent Nano Thin-Film Transistors for Medical Sensors, OLED and Display Applications

Background: Transparent thin-film transistors (TFTs) have received a great deal of attention for medical sensors, OLED and medical display applications. Moreover, ultrathin nanomaterial layers are favored due to their more compact design architectures. Methods: Here, transparent TFTs are proposed and were investigated under different stress conditions such as temperature and biases. Results: Key electrical characteristics of the sensors, such as threshold voltage changes, illustrate their linear dependence on temperature with a suitable recovery, suggesting the potential of the devices to serve as medical temperature sensors. The temperature conditions changed in the range of 28 degrees C to 40 degrees C, which is within the standard human temperature testing range. The thickness of the indium-gallium-zinc oxide semiconductor layer was as thin as only 5-6 nm, deposited by mature radio-frequency sputtering which also showed good repeatability. Optimal bending durability caused by mechanical deformation was demonstrated via suitable electrical properties after up to 600 bending cycles, and by testing the flexible device at a different bending radii ranging from 48 mm to 18 mm. Conclusion: In summary, this study suggests that the present transparent nano TFTs are promising candidates for medical sensors, OLED and displays which require transparency and stability

One-Transistor Memory Compatible with Si-Based Technology with Multilevel Applications

One-Transistor Memory Compatible with Si-Based Technology with Multilevel Application

Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications

Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Application

Robust Tunability and Newly Emerged <i>Q</i> Resonance of Ba_0.8Sr_0.2TiO₃‑Based Microwave Capacitors under Gamma Irradiations

The complex resonance of dielectric quality factor Q, combined with a capacitance tunability n higher than 3:1 without any dispersion, was achieved in the voltage-tunable interdigital capacitors (IDCs) based on epitaxial Ba0.8Sr0.2TiO3 ferroelectric thin films across the microwave L (1–2 GHz), S (2–4 GHz), and C (4–8 GHz) bands at room temperature. The resonant Q and n features were driven by the microwave responses of the ferroelectric nanodomains engineered in the films. To promote their application in space radiation environments, the evolutions of Q and n both as functions of frequency f (1–8 GHz) and applied electric field E (0–240 kV/cm) were systematically investigated under a series of gamma-ray irradiations up to 100 kGy. The robust capacitance tunability was accompanied by the emergence of an additional Q resonance at 2.3 GHz in most post-irradiated devices, which is ascribed to extra polar nanoregions of expanded surface lattices associated with oxygen vacancies induced by irradiations

CEPC Conceptual Design Report: Volume 2 - Physics & Detector

The Circular Electron Positron Collider (CEPC) is a large international scientific facility proposed by the Chinese particle physics community to explore the Higgs boson and provide critical tests of the underlying fundamental physics principles of the Standard Model that might reveal new physics. The CEPC, to be hosted in China in a circular underground tunnel of approximately 100 km in circumference, is designed to operate as a Higgs factory producing electron-positron collisions with a center-of-mass energy of 240 GeV. The collider will also operate at around 91.2 GeV, as a Z factory, and at the WW production threshold (around 160 GeV). The CEPC will produce close to one trillion Z bosons, 100 million W bosons and over one million Higgs bosons. The vast amount of bottom quarks, charm quarks and tau-leptons produced in the decays of the Z bosons also makes the CEPC an effective B-factory and tau-charm factory. The CEPC will have two interaction points where two large detectors will be located. This document is the second volume of the CEPC Conceptual Design Report (CDR). It presents the physics case for the CEPC, describes conceptual designs of possible detectors and their technological options, highlights the expected detector and physics performance, and discusses future plans for detector R&D and physics investigations. The final CEPC detectors will be proposed and built by international collaborations but they are likely to be composed of the detector technologies included in the conceptual designs described in this document. A separate volume, Volume I, recently released, describes the design of the CEPC accelerator complex, its associated civil engineering, and strategic alternative scenarios