89 research outputs found
Single Particle Transport in Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor
The single particle tunneling in a vertical stack consisting of monolayers of
two-dimensional semiconductors is studied theoretically and its application to
a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect
Transistor (Thin-TFET) is proposed and described. The tunneling current is
calculated by using a formalism based on the Bardeen's transfer Hamiltonian,
and including a semi-classical treatment of scattering and energy broadening
effects. The misalignment between the two 2D materials is also studied and
found to influence the magnitude of the tunneling current, but have a modest
impact on its gate voltage dependence. Our simulation results suggest that the
Thin-TFETs can achieve very steep subthreshold swing, whose lower limit is
ultimately set by the band tails in the energy gaps of the 2D materials
produced by energy broadening. The Thin-TFET is thus very promising as a low
voltage, low energy solid state electronic switch
Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons
A general solution for the electrostatic potential in an atomic-thin-body
(ATB) field-effect transistor geometry is presented. The effective
electrostatic scaling length, {\lambda}eff, is extracted from the analytical
model, which cannot be approximated by the lowest order eigenmode as
traditionally done in SOI-MOSFETs. An empirical equation for the scaling length
that depends on the geometry parameters is proposed. It is shown that even for
a thick SiO2 back oxide {\lambda}eff can be improved efficiently by thinner top
oxide thickness, and to some extent, with high-k dielectrics. The model is then
applied to self-consistent simulation of graphene nanoribbon (GNR)
Schottky-barrier field-effect transistors (SB-FETs) at the ballistic limit. In
the case of GNR SB-FETs, for large {\lambda}eff, the scaling is limited by the
conventional electrostatic short channel effects (SCEs). On the other hand, for
small {\lambda}eff, the scaling is limited by direct source-to-drain tunneling.
A subthreshold swing below 100mV/dec is still possible with a sub-10nm gate
length in GNR SB-FETs.Comment: 4 figures, accepted by ED
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