Radially Excited States of ηc\eta_c

In the framework of chiral quark model, the mass spectrum of $\eta_c(ns) (n=1,...,6)$ is studied with Gaussian expansion method. With the wave functions obtained in the study of mass spectrum, the open flavor two-body strong decay widths are calculated by using $^3P_0$ model. The results show that the masses of $\eta_c(1S)$ and $\eta_c(2S)$ are consistent with the experimental data. The explanation of X(3940) as $\eta_c(3S)$ is disfavored for X(3940) is a narrow state, $\Gamma=37^{+26}_{-15} \pm 8$ MeV, while the open flavor two-body strong decay width of $\eta_c(3S)$ is about 200 MeV in our calculation. Although the mass of X(4160) is about 100 MeV less than that of $\eta_c(4S)$, the assignment of X(4160) as $\eta_c(4S)$ can not be excluded because the open flavor two-body strong decay width of $\eta_c(4S)$ is consistent with the experimental value of X(4160) and the branching ratios of $\eta_c(4S)$ are compatible with that of X(4160), and the mass of $\eta_c(4S)$ can be shifted downwards by taking into account the coupling effect of the open charm channels. There are still no good candidates to $\eta_c(5S)$ and $\eta_c(6S)$.Comment: 5 page

Two-probe study of hot carriers in reduced graphene oxide

The energy relaxation of carriers in reduced graphene oxide thin films is studied using optical pump-probe spectroscopy with two probes of different colors. We measure the time difference between peaks of the carrier density at each probing energy by measuring a time-resolved differential transmission and find that the carrier density at the lower probing energy peaks later than that at the higher probing energy. Also, we find that the peak time for the lower probing energy shifts from about 92 to 37 fs after the higher probing energy peak as the carrier density is increased from 1.5E12 to 3E13 per square centimeter, while no noticeable shift is observed in that for the higher probing energy. Assuming the carriers rapidly thermalize after excitation, this indicates that the optical phonon emission time decreases from about 50 to about 20 fs and the energy relaxation rate increases from 4 to 10 meV/fs. The observed density dependence is inconsistent with the phonon bottleneck effect.Comment: 10 pages, 4 figure

Femtosecond Pump-Probe Studies of Reduced Graphene Oxide Thin Films

The dynamics of photocarriers in reduced graphene oxide thin films is studied by using ultrafast pump-probe spectroscopy. Time dependent differential transmissions are measured with sample temperatures ranging from 9 to 300 K. At each sample temperature and probe delay, the sign of differential transmission remains positive. A fast energy relaxation of hot carriers is observed, and is found to be independent of sample temperature. Our experiments show that the carrier dynamics in reduced graphene oxide is similar to other types of graphene, and that the differential transmission is caused by phase-state filling of carriers.Comment: 3 pages, 3 figure

Spatially resolved pump-probe study of single-layer graphene produced by chemical vapor deposition

Carrier dynamics in single-layer graphene grown by chemical vapor deposition (CVD) is studied using spatially and temporally resolved pump-probe spectroscopy by measuring both differential transmission and differential reflection. By studying the expansion of a Gaussian spatial profile of carriers excited by a 1500-nm pump pulse with a 1761-nm probe pulse, we observe a diffusion of hot carriers of 5500 square centimeter per second. We also observe that the expansion of the carrier density profile decreases to a slow rate within 1 ps, which is unexpected. Furthermore, by using an 810-nm probe pulse we observe that both the differential transmission and reflection change signs, but also that this sign change can be permanently removed by exposure of the graphene to femtosecond laser pulses of relatively high fluence. This indicates that the differential transmission and reflection at later times may not be directly caused by carriers, but may be from some residue material from the sample fabrication or transfer process.Comment: 9 pages, 3 figure

The ultra-low-frequency shear modes of 2-4 layer graphenes observed in their scroll structures at edges

The in-plane shear modes between neighbor-layers of 2-4 layer graphenes (LGs) and the corresponding graphene scrolls rolled up by 2-4LGs were investigated by Raman scattering. In contrast to that just one shear mode was observed in 3-4LGs, all the shear modes of 3-4LGs were observed in 3-4 layer scrolls (LSs), whose frequencies agree well with the theoretical predication by both a force-constant model and a linear chain model. In comparison to the broad width (about 12cm$^{-1}$) for the G band in graphite, all the shear modes exhibit an intrinsic line width of about 1.0 cm$^{-1}$. The local electronic structures dependent on the local staking configurations enhance the intensity of the shear modes in corresponding 2-4LSs zones, which makes it possible to observe all the shear modes. It provides a direct evidence that how the band structures of FLGs can be sensitive to local staking configurations. This result can be extended to n layer graphene (n > 4) for the understanding of the basic phonon properties of multi-layer graphenes. This observation of all-scale shear modes can be foreseen in other 2D materials with similar scroll structures.Comment: 14 pages, 5 figure